VRF2933MP

VRF2933 VRF2933MP 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V(BR)DSS = 170V • 300W with 22dB Typ. Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 3:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • Improved Replacement for SD2933 • Thermally Enhanced Package • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature Max All Ratings: TC =25°C unless otherwise specified VRF2933(MP) 170 40 ±40 648 -65 to 150 200 Unit V A V W °C Static Electrical Characteristics Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 8 2.9 3.6 4.4 Min 170 Typ 180 1.8 2.8 2.0 2.0 Max Unit V mA μA mhos V Thermal Characteristics Symbol RθJC Characteristic Junction to Case Thermal Resistance Min Typ Max 0.27 Unit °C/W 050-4941 Rev G 9 -2010 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 740 400 32 VRF2933(MP) Max Unit pF Functional Characteristics Symbol GPS ηD ψ Parameter f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W f1 = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 300W f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W 3:1 VSWR - All Phase Angles Min 20 Typ 25 50 Max Unit dB % No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 55 50 45 40 ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 0 V 0 5 10 15 4.5V 4V 3.5V 20 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 6V 5.5V 5V ID, DRAIN CURRENT (A) 7.5V 6.5V 25 20 15 10 5 TJ= 125°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 30 250 μs PULSE TEST