VRF2944

VRF2944 VRF2944MP 50V, 400W, 150MHz RF POWER VERTICAL MOSFET D The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. S S G FEATURES • Improved Ruggedness V(BR)DSS = 170V • 3:1 Load VSWR Capability at Specified Operating Conditions • 400W with 22dB Typ. Gain @ 30MHz, 50V • Nitride Passivated • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • Higher Power Version of VRF2933 • Available in Matched Pairs • Thermally Enhanced Package • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF2933(MP) Unit 170 V Continuous Drain Current @ TC = 25°C 50 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 795 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature Max °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 25A, VGS = 10V) 1.7 Max 2.1 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 2.0 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 2.0 μA gfs Forward Transconductance (VDS = 10V, ID = 20A) 10 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.22 °C/W mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4968 Rev A 2-2013 Thermal Characteristics Dynamic Characteristics Symbol VRF2944(MP) Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 1050 Coss Output Capacitance VDS = 50V 520 Crss Reverse Transfer Capacitance f = 1MHz 62 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 400W ηD f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 400W ψ f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 400W Min Typ 23 25 Max Unit dB 50 % No Degradation in Output Power 3:1 VSWR - All Phase Angles 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 90 100 80 8.0V 80 60 7.0V 50 6.5V 40 6.0V 30 5.5V 20 5.0V 4.5V 4V 10 0 V 5 10 15 20 25 20 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics Ciss Coss 100 Crss ID, DRAIN CURRENT (V) 500 1000 C, CAPACITANCE (F) TJ= 125°C 40 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 10,000 10 TJ= 25°C 60 0 30 TJ= -55°C 100 100μs IDMax 1ms Rds(on) 10 10ms PD Max DC line BVdss Line 0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 70 050-4968 Rev A 2-2013 250µs PULSE TEST