VRF3933

VRF3933 100V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. S S G FEATURES • Improved Ruggedness V(BR)DSS = 250V • 3:1 Load VSWR Capability at Specified Operating Conditions • 300W with 22dB Typ. Gain @ 30MHz, 100V • Nitride Passivated • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • Improved Replacement for SD3933 • Available in Matched Pairs • Thermally Enhanced Package • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF3933 Unit 250 V Continuous Drain Current @ TC = 25°C 20 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 648 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature Max °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 250 260 VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.7 Max 4.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 2.0 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 2.0 μA gfs Forward Transconductance (VDS = 10V, ID = 10A) 8 12 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.27 °C/W mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4969 Rev A 6 -2013 Thermal Characteristics Dynamic Characteristics Symbol VRF3933 Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 850 Coss Output Capacitance VDS = 50V 300 Crss Reverse Transfer Capacitance f = 1MHz 30 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 300W ηD f1 = 30MHz, VDD = 100V, IDQ = 250mA, Pout = 300W ψ f1 = 30MHz, VDD =100V, IDQ = 250mA, Pout = 300W Min Typ 23 26 Max Unit dB 50 % No Degradation in Output Power 3:1 VSWR - All Phase Angles 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 40 40 17V 10V 7V 35 6V 25 20 5.5V 15 5V 10 4.5V 5 4V 0 0 V 5 10 15 20 25 3.5V 30 TJ= -55°C 30 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 250µs PULSE TEST