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2N4351_TO-72

2N4351_TO-72

  • 厂商:

    MICROSS

  • 封装:

  • 描述:

    2N4351_TO-72 - an enhancement mode N-Channel Mosfet - Micross Components

  • 数据手册
  • 价格&库存
2N4351_TO-72 数据手册
2N4351 N-CHANNEL MOSFET The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR INTERSIL 2N4351  HIGH DRAIN CURRENT  HIGH GAIN  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  ID = 100mA   gfS = 1000µS  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  2N4351 Features: Maximum Power Dissipation  Continuous Power Dissipation   Low ON Resistance MAXIMUM CURRENT Low Capacitance Drain to Source (Note 1)  High Gain MAXIMUM VOLTAGES  High Gate Breakdown Voltage Drain to Body  Low Threshold Voltage Drain to Source  Peak Gate to Source (Note 2)  2N4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  BVDSS  Drain to Source Breakdown Voltage  25  ‐‐  ‐‐    V  VDS(on)  Drain to Source “On” Voltage  ‐‐  ‐‐  1  VGS(th)  Gate to Source Threshold Voltage  1  ‐‐  5  IGSS  Gate Leakage Current  ‐‐  ‐‐  10  pA  IDSS  Drain Leakage Current “Off”  ‐‐  ‐‐  10  nA  ID(on)  Drain Current “On”  3  ‐‐  ‐‐  mA  gfs  Forward Transconductance  1000  ‐‐  ‐‐  µS  rDS(on)  Drain to Source “On” Resistance  ‐‐  ‐‐  300  Ω  ‐65°C to +200°C  ‐55°C to +150°C  375mW  100mA  25V  25V  ±125V  CONDITIONS  ID = 10µA,   VGS = 0V                     ID = 2mA,   VGS = 10V  VDS = 10V,    ID = 10µA  VGS = ±30V,   VDS = 0V  VGS = 10V,   VDS = 10V  VGS = 10V,  VDS = 10V  VDS = 10V,    ID = 2mA ,   f = 1MHz  VGS = 10V,   ID = 0A,   f = 1kHz  Crss  Reverse Transfer Capacitance  ‐‐  ‐‐  1.3    VDS = 0V,     VGS = 0V ,   f = 140kHz  pF  Ciss  Input Capacitance  ‐‐  ‐‐  5  VDS = 10V,     VGS = 0V ,   f = 140kHz  Cdb  Drain to Body Capacitance  ‐‐  ‐‐  5.0  VDB = 10V,   f = 140kHz                SWITCHING CHARACTERISTICS                                                                                                                                     TIMING WAVEFORMS  SYMBOL  CHARACTERISTIC  MAX  UNITS  td(on)  Turn On Delay Time  45    ns  tr  Turn On Rise Time  65  td(off)  Turn Off Delay Time  60  tf  Turn Off Fall Time  100                                            SWITCHING TEST CIRCUIT  Click To Buy Available Packages: 2N4351 in TO-72 2N4351 in bare die. TO-72 (Bottom View) Note 1 ‐ Absolute maximum ratings are limiting values above which 2N4351 serviceability may be impaired.  Note 2 ‐ Device must not be tested at ±125V more than once or longer than 300ms. Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions * Body tied to case Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
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