3N171_TO-72

3N171 N-CHANNEL MOSFET The 3N171 is an enhancement mode N-Channel Mosfet The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR INTERSIL 3N171  LOW DRAIN TO SOURCE RESISTANCE  FAST SWITCHING  ABSOLUTE MAXIMUM RATINGS (Note 1)  @ 25°C (unless otherwise noted)  rDS(on) ≤ 200Ω  td(on) ≤ 3.0ns  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  3N171 Features: Maximum Power Dissipation  Continuous Power Dissipation   Low ON Resistance MAXIMUM CURRENT Low Capacitance Drain to Source   High Gain MAXIMUM VOLTAGES  High Gate Breakdown Voltage Drain to Gate  Low Threshold Voltage Drain to Source  Peak Gate to Source     3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  BVDSS  Drain to Source Breakdown Voltage  25  ‐‐  ‐‐    V  VDS(on)  Drain to Source “On” Voltage  ‐‐  ‐‐  2.0  VGS(th)  Gate to Source Threshold Voltage  1.5  ‐‐  2.0  IGSS  Gate Leakage Current  ‐‐  ‐‐  10  pA  IDSS  Drain Leakage Current “Off”  ‐‐  ‐‐  10  nA  ID(on)  Drain Current “On”  10  ‐‐  ‐‐  mA  gfs  Forward Transconductance  1000  ‐‐  ‐‐  µS  rDS(on)  Drain to Source “On” Resistance  ‐‐  ‐‐  200  Ω  ‐65°C to +150°C  ‐55°C to +135°C  300mW  30mA  ±35V  25V  ±35V    CONDITIONS  ID = 10µA,   VGS = 0V                     ID = 10mA,   VGS = 10V  VDS = 10V,    ID = 10µA  VGS = ‐35V,   VDS = 0V  VGS = 10V,   VDS = 10V  VGS = 10V,  VDS = 10V  VDS = 10V,    ID = 2mA ,   f = 1kHz  VGS = 10V,   ID = 0A,   f = 1kHz  Crss  Reverse Transfer Capacitance  ‐‐  ‐‐  1.3    VDS = 0V,     VGS = 0V ,   f = 1MHz  pF  Ciss  Input Capacitance  ‐‐  ‐‐  5  VDS = 10V,     VGS = 0V ,   f = 1MHz  Cdb  Drain to Body Capacitance  ‐‐  ‐‐  5.0  VDB = 10V,   f = 1MHz                SWITCHING CHARACTERISTICS                                                                                                                                       SYMBOL  CHARACTERISTIC  MAX  UNITS  CONDITIONS  td(on)  Turn On Delay Time  3      ns  VDD = 10V,  ID(on) = 10mA, VGS(on) = 10V, VGS(off) = 0V, RG = 50Ω  tr  Turn On Rise Time  10  td(off)  Turn Off Delay Time  3  tf  Turn Off Fall Time  15  Click To Buy Available Packages: 3N171 in TO-72 3N171 in bare die. TO-72 (Bottom View) Note 1 ‐ Absolute maximum ratings are limiting values above which 3N171 serviceability may be impaired.  Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions * Body tied to case Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx