LS122_SOIC

LS122 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT122 The LS122 is a monolithic pair of NPN transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS122 is a direct replacement for discontinued Intersil IT122. The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS122 Features: High hfe at low current Tight matching Tight VBE tracking Low Output Capacitance FEATURES  Direct Replacement for INTERSIL LS122  HIGH  hFE @ LOW CURRENT  OUTPUT CAPACITANCE  VBE tracking ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  TYP  ‐‐  ‐‐  ‐‐  MAX  5  20  25  UNITS  mV  µV/°C  nA  ≥ 80 @ 10µA  ≤ 2.0pF  ≤ 20µV°C  ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.3mW/°C  4.3mW/°C  10mA    CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 – VBE2)| / ∆T  Base Emitter Voltage Differential    Change with Temperature  |IB1 – IB2 |  Base Current Differential    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  BVCBO  Collector to Base Voltage  45  BVCEO  Collector to Emitter Voltage  45  BVEBO  Emitter‐Base Breakdown Voltage  6.2  BVCCO  Collector to Collector Voltage  60  hFE  DC Current Gain  80  100  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutoff Current  ‐‐  ICBO  Collector Cutoff Current  ‐‐  COBO  Output Capacitance  ‐‐  CC1C2  Collector to Collector Capacitance  ‐‐  IC1C2  Collector to Collector Leakage Current  ‐‐  fT  Current Gain Bandwidth Product  180  NF  Narrow Band Noise Figure  ‐‐  Click To Buy TYP.  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  MAX.  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  0.5  1  1  2  2  10  ‐‐  3  UNITS  V  V  V  V      V  nA  nA  pF  pF  nA  MHz  dB  SOIC (Top View) CONDITIONS  IC = 10µA, IE = 0  IC = 10µA, IB = 0  IE = 10µA, IC = 02  IC = 10µA, IE = 0  IC = 10µA, VCE = 5V  IC = 1.0mA, VCE = 5V  IC = 0.5mA, IB = 0.05mA  IC = 0, VEB = 3V  IE = 0, VCB = 45V  IE = 0, VCB = 5V  VCC = 0V  VCC = ±60V  IC = 1mA, VCE = 5V  IC = 100µA,  VCE = 5V, BW=200Hz, RG= 10KΩ,  f = 1KHz  Notes:  1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.    Available Packages: LS122 in SOIC LS122 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.