LS303_PDIP

LS303 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS303 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS303 Features: Very high gain Tight matching Low Output Capacitance FEATURES  HIGH  GAIN   LOW OUTPUT CAPACITANCE  TIGHT VBE MATCHING  HIGH ft  ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  TYP  0.2  1  0.5  5  MAX  1  5  1.5  ‐‐  UNITS  mV  µV/°C  nA  %  hFE ≥ 2000 @ 1µA TYP.  COBO ≤ 2.0pF  |VBE1 – VBE2 |= 0.2mV TYP.  100MHz  ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.3mW/°C  4.3mW/°C  5mA    CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 – VBE2)| / ∆T  Base Emitter Voltage Differential    Change with Temperature  |IB1 – IB2 |  Base Current Differential  hFE1 /hFE2  DC Current Gain Differential    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  BVCBO  Collector to Base Voltage  10  BVCEO  Collector to Emitter Voltage  10  BVEBO  Emitter‐Base Breakdown Voltage  6.2  BVCCO  Collector to Collector Voltage  100    ‐‐    DC Current Gain  hFE  2000  ‐‐  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutoff Current  ‐‐  ICBO  Collector Cutoff Current  ‐‐  COBO  Output Capacitance  ‐‐  CC1C2  Collector to Collector Capacitance  ‐‐  IC1C2  Collector to Collector Leakage Current  ‐‐  fT  Current Gain Bandwidth Product  100  NF  Narrow Band Noise Figure  ‐‐  Click To Buy ‐‐  TYP.  ‐‐  ‐‐  ‐‐  ‐‐  2000  ‐‐  2000  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  MAX.  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  0.5  0.2  100  2  2  0.5  ‐‐  3  UNITS  V  V  V  V        V  pA  pA  pF  pF  nA  MHz  dB  CONDITIONS  IC = 10µA, IE = 0  IC = 10µA, IB = 0  IE = 10µA, IC = 02  IC = 10µA, IE = 0  IC = 1µA, VCE = 5V  IC = 10µA, VCE = 5V  IC = 500µA, VCE = 5V  IC = 1mA, IB = 0.1mA  IC = 0, VEB = 3V  IE = 0, VCB = 5V  IE = 0, VEB = 1V  VCC = 0V  VCC = ±20V  IC = 200µA, VCE = 5V  IC = 10µA,  VCE = 3V, BW=200Hz, RG= 10KΩ,   f = 1KHz  Notes:  1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.      P-DIP (Top View)     Available Packages: LS303 in P-DIP LS303 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.