LS320 BiFET Amplifier
Linear Systems High Input Impedance BiFET Amplifier
The LS320 is a high input impedance amplifer produced using a BiFET process and packaged in TO-72 The hermetically sealed TO-72 package is well suited for hi-rel and harsh environment applications. (See Packaging Information). FEATURES HIGH INPUT IMPEDANCE rGs ≥ = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS 1@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation @ +125°C Maximum Currents Drain Current Maximum Voltages Drain to Source Gate to Source ‐65°C to +150°C ‐55°C to +125°C 200mW 2.3mW/°C ID = 25mA VDSO = 20V VGSS = 20V
LS320 Features: High Input Impedance High Transconductance
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. VDS Drain to Source Voltage ‐20 VGS Collector to Source Voltage ‐12 gfs Common Source Forward 30000 Transconductance goss Common Source Output Conductance ‐‐ rGs Gate to Source Input Resistance 100 CISS Input Capacitance ‐‐ CRSS Reverse Transfer Capacitance ‐‐ en Noise Voltage ‐‐
TYP. ‐‐ ‐10 ‐‐ 300 ‐‐ 8 1.5 25
MAX. ‐‐ ‐7 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐
UNITS V V µS
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The gate to source voltage must never exceed 100V, t
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