LS3250B_P-DIP

LS3250B MONOLITHIC DUAL NPN TRANSISTOR Linear Systems Log Conformance Monolithic Dual NPN The LS3250B is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and is ideal for use in tracking applications. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS3250B Features: Tight matching Low Output Capacitance FEATURES  TIGHT MATCHING   THERMAL TRACKING  ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   Maximum Currents  Collector Current  Maximum Voltages  Collector to Collector Voltage    MIN  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  TYP  ‐‐  ‐  ‐‐  ‐‐  ‐‐  MAX  5  5  10  0.5  10  UNITS  mV  µV/°C  nA  nA/°C  %  ≤ 5mV  ≤ 5µV / °C ‐65°C to +150°C  ‐55°C to +150°C  TBD  50mA  80V    CONDITIONS  IC = 10mA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐40°C to +85°C  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐40°C to +85°C  IC = 10µA, VCE = 5V  MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 – VBE2)| / ∆T  Base Emitter Voltage Differential    Change with Temperature  |IB1 – IB2 |  Base Current Differential  |∆ (IB1 – IB2)|/ ∆T  Base Current Differential   Change with Temperature  hFE1 /hFE2  DC Current Gain Differential    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  BVCBO  Collector to Base Voltage  40  BVCEO  Collector to Emitter Voltage  40  BVEBO2  Emitter‐Base Breakdown Voltage  6.2  BVCCO  Collector to Collector Voltage  80    100    DC Current Gain  hFE  80  80  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutoff Current  ‐‐  ICBO  Collector Cutoff Current  ‐‐  COBO  Output Capacitance  ‐‐  IC1C2  Collector to Collector Leakage Current  ‐‐  fT  Current Gain Bandwidth Product  ‐‐  NF  Narrow Band Noise Figure  ‐‐  Click To Buy TYP.  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  MAX.  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  0.25  0.2  0.2  2  1  600  3  UNITS  V  V  V  V        V  nA  nA  pF  nA  MHz  dB  CONDITIONS  IC = 10mA, IE = 0  IC = 10µA, IB = 0  IE = 10µA, IC = 0  IC = 10µA, IE = 0  IC = 10µA, VCE = 5V  IC = 100µA, VCE = 5V  IC = 1mA, VCE = 5V  IC = 100mA, IB = 10mA  IC = 0A, VCB = 3V  IE = 0A, VCB = 20V  IE = 0A, VCB = 10V  VCC = ±80V  IC = 1mA, VCE = 5V  IC = 100µA,  VCE = 5V, BW=200Hz, RB= 10Ω,   f = 1KHz  Notes:  1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.      P-DIP (Top View)     Available Packages: LS3250B in P-DIP LS3250B available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.