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LS358_SOT-23

LS358_SOT-23

  • 厂商:

    MICROSS

  • 封装:

  • 描述:

    LS358_SOT-23 - MONOLITHIC DUAL NPN TRANSISTOR - Micross Components

  • 数据手册
  • 价格&库存
LS358_SOT-23 数据手册
LS358 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Log Conformance Monolithic Dual PNP The LS358 is a monolithic pair of PNP transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and is ideal for use in logging applications. See LS318 for NPN. The 6 Pin SOT-23 provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information). LS358 Features: Tight matching Low Output Capacitance FEATURES  LOG CONFORMANCE   ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  TYP  0.4  1  ‐‐  ‐‐  5  MAX  1  10  10  0.5  ‐‐  UNITS  mV  µV/°C  nA  nA/°C  %  ∆re = 1.5Ω ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.3mW/°C  4.3mW/°C  10mA    CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 – VBE2)| / ∆T  Base Emitter Voltage Differential    Change with Temperature  |IB1 – IB2 |  Base Current Differential  |∆ (IB1 – IB2)|/°C  Base Current Differential   Change with Temperature  hFE1 /hFE2  DC Current Gain Differential    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  ∆re  Log Conformance  ‐‐  BVCBO  Collector to Base Voltage  20  BVCEO  Collector to Emitter Voltage  20  BVEBO  Emitter‐Base Breakdown Voltage  6.2  BVCCO  Collector to Collector Voltage  45      100  hFE  DC Current Gain  100  100  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutoff Current  ‐‐  ICBO  Collector Cutoff Current  ‐‐  COBO  Output Capacitance  ‐‐  CC1C2  Collector to Collector Capacitance  ‐‐  IC1C2  Collector to Collector Leakage Current  ‐‐  fT  Current Gain Bandwidth Product  200  NF  Narrow Band Noise Figure  ‐‐  Click To Buy TYP.  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  MAX.  1.5  ‐‐  ‐‐  ‐‐  ‐‐  600  600  ‐‐  0.5  0.2  0.2  2  2  0.5  ‐‐  3  UNITS  Ω  V  V  V  V        V  nA  nA  pF  pF  nA  MHz  dB  CONDITIONS  IC = 10‐100‐1000µA, VCE = 5V  IC = 10µA, IE = 0  IC = 10µA, IB = 0  IE = 10µA, IC = 02  IC = 10µA, IE = 0  IC = 10µA, VCE = 5V  IC = 100µA, VCE = 5V  IC = 1mA, VCE = 5V  IC = 1mA, IB = 0.1mA  IC = 0, VEB = 3V  IE = 0, VCB = 15V  IE = 0, VCB = 5V  VCC = 0V  VCC = ±45V  IC = 1mA, VCE = 5V  IC = 100µA,  VCE = 5V, BW=200Hz, RG= 10KΩ,   f = 1KHz  Notes:  1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.        SOT-23 (Top View)   Available Packages: LS358 in SOT-23 LS358 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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