LS4391

LS4391 Single N-Channel JFET switch Linear Systems replaces discontinued Siliconix 2N4391 FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N4391  LOW ON RESISTANCE  rDS(on) ≤ 30Ω  LOW GATE OPERATING CURRENT  ID(off) = 5pA  FAST SWITCHING  t(ON) ≤= 15ns  LS4391 Benefits: ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)  Low Error Voltage Maximum Temperatures  High-Speed Analog Circuit Performance Storage Temperature  ‐65°C to +200°C  Negligible “Off-Error,” Excellent Accuracy Good Frequency Response, Low Glitches Operating Junction Temperature  ‐55°C to +200°C  Eliminates Additional Buffering Maximum Power Dissipation  Continuous Power Dissipation   350mW  LS4391 Applications: MAXIMUM CURRENT Analog Switches Gate Current (Note 1)  IG = 50mA  Choppers, Sample-and-Hold MAXIMUM VOLTAGES  Normally “On” Switches, Current Limiters Gate to Drain Voltage /  Gate to Source Voltage  ‐35V  LS4391 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐35  ‐‐  ‐‐    IG = ‐1µA,   VDS = 0V  V  VGS(off)  Gate to Source Cutoff Voltage  ‐4  ‐‐  ‐10  VDS = 15V, ID = 10nA  VGS(F)  Gate to Source Forward Voltage  ‐‐  0.7  1                     IG =  1mA,   VDS = 0V  VDS(on)  Drain to Source On Voltage  ‐‐  0.25  ‐‐  VGS = 0V,   ID = 3mA  VDS(on)  Drain to Source On Voltage  ‐‐  0.3  ‐‐    VGS = 0V,   ID = 6mA  VDS(on)  Drain to Source On Voltage  ‐‐  0.35  0.4    VGS = 0V,   ID = 12mA  IDSS  Drain to Source Saturation Current2  50  ‐‐  ‐‐  mA  VDS = 20V, VGS = 0V  IGSS  Gate Reverse Current  ‐‐  ‐5  ‐100    VGS = ‐20V,  VDS = 0V  pA  IG  Gate Operating Current  ‐‐  ‐5  ‐‐  VDG = 15V,  ID = 10mA  ID(off)  Drain Cutoff Current  ‐‐  5  100  VDS = 10V,   VGS = ‐10V  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  30  Ω  VGS = 0V,   ID = 1mA  LS4391 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  TYP  MIN  MAX  UNITS  CONDITIONS  The LS4391 features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. gfs  gos  rds(on)  Ciss  Crss  Crss  Crss  en  SYMBOL  td(on)  tr  td(off)  tf  Equivalent Input Noise Voltage  CHARACTERISTIC    Turn On Time    Turn Off Time  Click To Buy Forward Transconductance  Output Conductance  Input Capacitance    Reverse Transfer Capacitance  6  ‐‐  ‐‐  mS  µS  Ω      pF  25  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  MIN  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  MAX  ‐‐  ‐‐  ‐‐  ‐‐  nV/√Hz  UNITS      ns    Drain to Source On Resistance  ‐‐  30  13  3.6  3.5  3.1  3  TYP  2  2  6  13  CONDITIONS  VDS = 20V,  ID = 1mA,  f = 1kHz  VDS = 20V,  ID = 1mA,  f = 1kHz  VGS = 0V,  ID = 0A,  f = 1kHz  VDS = 20V,   VGS = 0V,  f = 1MHz  VDS = 0V,   VGS = ‐5V,  f = 1MHz  VDS = 0V,   VGS = ‐7V,  f = 1MHz  VDS = 0V,   VGS = ‐12V,  f = 1MHz  VDS = 10V,  ID = 10mA,  f = 1kHz  LS4391 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)      VDD = 10V,   VGS(H) = 0V  Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired               2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%    LS4391 SWITCHING CIRCUIT PARAMETERS                                                                                                                                         SWITCHING CIRCUIT  ‐12V    SOT-23 (Top View) 800Ω    ID(on)  12mA          Available Packages:       LS4391 in SOT-23       LS4391 in bare die.             Contact Micross for full package and die dimensions VGS(L)  RL  Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.