LS4416A_TO-18

LS4416A N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4416A The LS4416A is a N-Channel high frequency JFET amplifier The LS4416A N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-18 package is well suited for military applications and harsh environment applications. FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N4416A  EXCEPTIONAL GAIN (400 MHz)  VERY LOW NOISE FIGURE (400 MHz)  VERY LOW DISTORTION  HIGH AC/DC SWITCH OFF‐ISOLATION  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Gate Current (Note 1)  MAXIMUM VOLTAGES  Gate to Drain or Gate to Source      10dB (min)  4dB (max)  LS4416A Benefits: Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification ‐65°C to +200°C  ‐55°C to +135°C  300mW  10mA  ‐35V      LS4416A Applications: High-Frequency Amplifier / Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches   LS4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  BVGSS  Gate to Source Breakdown Voltage  ‐35  ‐‐  ‐‐  V  VGS(off)  Gate to Source Cutoff Voltage  ‐2.5  ‐‐  ‐6  V  IDSS  Gate to Source Saturation Current  5  ‐‐  15  mA  IGSS  Gate Leakage Current  ‐‐  ‐‐  ‐0.1  nA  gfs  Forward Transconductance  4500  ‐‐  7500  µS  gos  Output Conductance  ‐‐  ‐‐  50  µS  Ciss  Input Capacitance2  ‐‐  ‐‐  0.8  pF  Crss  Reverse Transfer Capacitance2  ‐‐  ‐‐  4  pF  Coss  Output Capacitance2  ‐‐  ‐‐  2  pF  en  Equivalent Input Noise Voltage  ‐‐  6  ‐‐  nV/√Hz   LS4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  100 Mhz  400 Mhz  UNITS  MIN  MAX  MIN  MAX  gIss  bIss  goss  boss  Gfs  Gps  NF  NOTES  Input Conductance  Input Susceptance2  Output Conductance  Output  Susceptance   Forward Transconductance  Power Gain   Noise Figure   2 2 2 Click To Buy CONDITIONS  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  18  ‐‐  100  2500  75  1000  ‐‐  ‐‐  2  ‐‐  ‐‐  ‐‐  ‐‐  4000  10  ‐‐  1000  10000  100  4000  ‐‐  ‐‐  4  dB      µS  1 . Absolute maximum ratings are limiting values above which LS4416A serviceability may be impaired.   2.  Not production tested, guaranteed by design  Available Packages: LS4416A in TO-18 LS4416A in bare die. TO-18 (Bottom View) CONDITIONS  IG = ‐1µA,   VDS = 0V                    VDS = 15V,   ID = 1nA  VDS = 15V,   VGS = 0V  VGS = ‐20V,  VDS = 0V  VDS = 15V,   VGS = 0V, f = 1kHz    VDS = 15V,   VGS = 0V, f = 1MHz  VDS = 10V,   VGS = 0V, f = 1kHz      VDS = 15V,   VGS = 0V  VDS = 15V,   ID = 5mA  VDS = 15V,   ID = 5mA,    RG = 1kΩ  Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx