LS5019

LS5019 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5019 The LS5019 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The SOT-23 package provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N5019  ZERO OFFSET VOLTAGE  LOW ON RESISTANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  rDS(on) ≤ 150Ω  Maximum Temperatures  Storage Temperature  ‐55°C to +200°C  Low Insertion Loss Operating Junction Temperature  ‐55°C to +200°C  No offset or error voltage generated by closed Maximum Power Dissipation  switch Continuous Power Dissipation   500mW  Purely resistive MAXIMUM CURRENT LS5019 Applications: Gate Current (Note 1)  IG = ‐50mA  Analog Switches MAXIMUM VOLTAGES  Commutators Gate to Drain Voltage  VGDS = 30V  Choppers Gate to Source Voltage  VGSS = 30V      LS5019 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  30  ‐‐  ‐‐    IG = 1µA,   VDS = 0V  V  VGS(off)  Gate to Source Cutoff Voltage  ‐‐  ‐‐  5  VDS = ‐15V, ID = ‐1µA  VDS(on)  Drain to Source On Voltage  ‐‐  ‐‐  ‐0.5  VGS = 0V, ID = ‐3mA  IDSS  Drain to Source Saturation Current (Note 2)  ‐5  ‐‐  ‐‐  mA  VDS = ‐20V, VGS = 0V  IGSS  Gate Reverse Current  ‐‐  ‐‐  2  nA  VGS = 15V,  VDS = 0V  ID(off)  Drain Cutoff Current  ‐‐  ‐‐  ‐10  VDS = ‐15V, VGS = 12V  ‐‐  ‐‐  ‐10  µA  VDS = ‐15V, VGS = 7V  IDGO  Drain Reverse Current  ‐‐  ‐‐  ‐2  nA  VDG = ‐15V, IS = 0A  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  150  Ω  ID = ‐1mA,   VGS = 0V  LS5019 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  150  Ω  ID = 0A,   VGS = 0V,   f = 1kHz  Ciss  Input Capacitance  ‐‐  ‐‐  45  pF  VDS = ‐15V, VGS = 0V, f = 1MHz  Crss  Reverse Transfer Capacitance  ‐‐  ‐‐  10  VDS = 0V, VGS = 7V, f = 1MHz  LS5019 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC    UNITS  CONDITIONS  LS5019 Benefits: Click To Buy Turn On Time  Turn On Rise Time  Turn Off Time  Turn Off Fall Time  15  75  25  100      ns  VGS(L) = 7V  VGS(H) = 0V    See Switching Circuit                    LS5019 in SOT-23 LS5019 in bare die. Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution td(on)  tr  td(off)  tf                                                                                                                                                                                                                SWITCHING TEST CIRCUIT LS5019 SWITCHING CIRCUIT PARAMETERS                                                                                                                           SOT-23 (Top View) VDD  ‐6V    Available Packages: VGG  8V  RL  1.8kΩ  RG  390Ω  ID(on)  ‐3mA      Micross Components Europe                 Note 1 ‐  Absolute maximum ratings are limiting values above which LS5019 serviceability may be impaired.                                                                                                                   Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx