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LSID100

LSID100

  • 厂商:

    MICROSS

  • 封装:

  • 描述:

    LSID100 - PICO-AMP DUAL DIODE - Micross Components

  • 数据手册
  • 价格&库存
LSID100 数据手册
LSID100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil LSID100 The LSID100 is a low leakage Monolithic Dual Pico-Amp Diode The LSID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. In addition the monolithic dual construction allows excellent capacitance matching per diode. The LSID100 features a leakage current of 0.1 pA and is well suited for use in applications such as input protection for operational amplifiers. FEATURES  DIRECT REPLACEMENT FOR INTERSIL LSID100  REVERSE LEAKAGE CURRENT  REVERSE BREAKDOWN VOLTAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS (Note 1)  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   Maximum Currents Forward Current   Reverse Current  Maximum Voltages  Reverse Voltage  Diode to Diode Voltage  IR = 0.1pA  BVR ≥ 30V  Crss = 0.75pF  LSID100 Benefits: Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +200°C  ‐55°C to +150°C  300mW  20mA  100µA  30V  ±50V  LSID100 Applications: Op Amp Input Protection Multiplexer Overvoltage Protection   LSID100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  30  ‐‐  VF  Forward Voltage  0.8  ‐‐  IR  Reverse Leakage Current  ‐‐  0.1  ‐‐  2.0  |IR1‐IR2|  Differential Leakage Current  ‐‐  ‐‐  CrSS  Total Reverse Capacitance(Note 2)  ‐‐  0.75  Note 1 - Absolute maximum ratings are limiting values above which LSID100 serviceability may be impaired. Note 2 - Design reference only, not 100% tested Click To Buy pF  TO-78 (Bottom View) Available Packages: MAX.  ‐‐  1.1  ‐‐  10  3  1  UNITS  V  V    pA  CONDITIONS  IR = 1µA  IF = 10mA  VR = 1V  VR = 10V  VR = 10V, f = 1MHz  FIGURE 1 – Operational Amplifier Protection    Input Differential Voltage limited to 0.8V (typ) by Diodes LSID100  D1 and D2. Common Mode Input voltage limited by Diodes  LSID100 D3 and D4 to ±15V.  FIGURE 2  – Sample & Hold Circuit    Typical Sample and Hold circuit with clipping. LSID100 diodes  reduce offset voltages fed capacitively from the LSID100 switch  gate. Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution LSID100 in TO-78 LSID100 available as bare die Please contact Micross for full package and die dimensions Note pins 3 & 5 must not be connected, in  any fashion or manner, to any circuit or node  Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: baredie@micross.com Web: www.micross.com/distribution.aspx
LSID100 价格&库存

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