LSJ111_TO-92

LSJ111 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J111 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J111  LOW GATE LEAKAGE CURRENT  5pA  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  LSJ111 Benefits: Operating Junction Temperature  ‐55°C to +135°C  Short Sample & Hold Aperture Time Maximum Power Dissipation  Low insertion loss Continuous Power Dissipation   360mW  Low Noise MAXIMUM CURRENT LSJ111 Applications: Gate Current (Note 1)  50mA  Analog Switches MAXIMUM VOLTAGES  Commutators Gate to Drain Voltage  VGDS = ‐35V  Choppers Gate to Source Voltage  VGSS = ‐35V      LSJ111 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐35  ‐‐  ‐‐    IG = 1µA,   VDS = 0V    VGS(off)  Gate to Source Cutoff Voltage  ‐3  ‐‐  ‐10  VDS = 5V, ID = 1µA  V  VGS(F)  Gate to Source Forward Voltage  ‐‐  0.7  ‐‐  IG = 1mA,   VDS = 0V  IDSS  Drain to Source Saturation Current (Note 2)  20  ‐‐  ‐‐  mA  VDS = 15V, VGS = 0V  IGSS  Gate Reverse Current  ‐‐  ‐0.005  ‐1  nA  VGS = ‐15V,  VDS = 0V  IG  Gate Operating Current  ‐‐  ‐0.5  ‐‐  pA  VDG = 15V,  ID = 10mA  ID(off)  Drain Cutoff Current  ‐‐   0.005  1  nA  VDS = 5V, VGS = ‐10V  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  30  Ω  IG = 1mA,  VDS = 0V                LSJ111 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  gfs  Forward Transconductance  ‐‐  6  ‐‐  mS  VDS = 20V,  ID = 1mA , f = 1kHz  gos  Output Conductance  ‐‐  25  ‐‐  µS  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  30  Ω  VGS = 0V, ID = 0mA,  f = 1kHz  Ciss  Input Capacitance  ‐‐  7  12  pF  VDS = 0V, VGS = ‐10V, f = 1MHz    Crss  Reverse Transfer Capacitance  ‐‐  3  5  en  Equivalent Noise Voltage  ‐‐  3  ‐‐  nV/√Hz  VDG = 10V,  ID = 1mA , f = 1kHz                LSJ111 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC    UNITS  CONDITIONS  Click To Buy Turn On Time  Turn On Rise Time  Turn Off Time  Turn Off Fall Time  2  2  6  15      ns  VDD = 10V  VGS(H) = 0V    See Switching Circuit                  Available Packages: LSJ111 in TO-92 LSJ111 in bare die. Please contact Micross for full package and die dimensions TO-92 (Bottom View) td(on)  tr  td(off)  tf  Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ111 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%                                                                                                                   LSJ111 SWITCHING CIRCUIT PARAMETERS                                                                                                                           ‐12V  RL  800Ω  ID(on)  12mA          Micross Components Europe             VGS(L)  SWITCHING TEST CIRCUIT Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.