LSU308_TO-18

LSU308 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U308 The LSU308 is a high frequency n-channel JFET offering a wide range and low noise performance. The hermetically sealed TO-18 package is well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX U308  OUTSTANDING HIGH FREQUENCY GAIN   LOW HIGH FREQUENCY NOISE  ABSOLUTE MAXIMUM RATINGS @ 25°C1   Gpg = 11.5dB  NF = 2.7dB  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  High Power Low Noise gain Operating Junction Temperature  ‐55°C to +135°C  Dynamic Range greater than 100dB Maximum Power Dissipation  Easily matched to 75Ω input Continuous Power Dissipation   500mW  LSU308 Applications: MAXIMUM CURRENT Gate Current  10mA  UHV / VHF Amplifiers MAXIMUM VOLTAGES  Mixers Gate to Drain Voltage or  Gate to Source Voltage   ‐25V  Oscillators         LSU308 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNIT  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐25  ‐‐  ‐‐  V  VDS = 0V, IG = ‐1µA  VGS(F)  Gate to Source Forward Voltage  0.7  ‐‐  1  VDS = 0V, IG = 10mA  VGS(off)  Gate to Source Cutoff Voltage  ‐1  ‐‐  ‐6.5  VDS = 10V,  ID = 1nA  IDSS  Drain to Source Saturation Current2  12  ‐‐  60  mA  VDS = 10V, VGS = 0V  IG  Gate Operating Current (Note 3)  ‐‐  ‐15  ‐‐  pA  VDG = 9V,  ID = 10mA  rDS(on)  Drain to Source On Resistance  ‐‐  35  ‐‐  Ω  VGS = 0V,  ID = 1mA                LSU308 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNIT  CONDITIONS  gfs  Forward Transconductance  8  14  ‐‐  mS  VDS = 10V,   ID = 10mA , f = 1kHz  gos  Output Conductance  ‐‐  110  250  µS  Ciss  Input Capacitance  ‐‐  4  5  pF  VDS = 10V,   VGS = ‐10V , f = 1MHz   Crss  Reverse Transfer Capacitance  ‐‐  1.9  2.5  en  Equivalent Noise Voltage  6  ‐‐  ‐‐  nV/√Hz  VDS = 10V,    ID = 10mA ,  f = 100Hz                LSU308 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP  MAX  UNIT  CONDITIONS  LSU308 Benefits: Click To Buy Noise Figure  Power Gain3  Forward Transconductance  Output Conductance  f = 105MHz  f = 450MHz  f = 105MHz  f = 450MHz  f = 105MHz  f = 450MHz  f = 105MHz  f = 450MHz  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  1.5  2.7  16  11.5  14  13  0.16  0.55  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  dB  dB          mS  Available Packages: LSU308 in TO-18 LSU308 in bare die. TO-18 (Bottom View) NF  Gpg  gfg  gog          VDS = 10V,    ID = 10mA        Note 1 ‐ Absolute maximum ratings are limiting values above which LSU308 serviceability may be impaired.   Note 2 ‐ Pulse test : PW ≤ 300µs, Duty  Cycle ≤ 3%      Note 3 ‐ Measured at optimum input noise match          Micross Components   Europe         Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx