LSU406_PDIP

LSU406 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U406 The LSU406 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LSU406 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LSU406 features a 5mV offset and 10-µV/°C drift. The LSU406 is a direct replacement for discontinued Siliconix LSU406. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES  LOW DRIFT  LOW NOISE  LOW PINCHOFF  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  | V GS1‐2 / T| = 10µV/°C TYP.  en = 6nV/Hz @ 10Hz TYP.  Vp = 2.5V TYP.  LSU406 Applications: Wideband Differential Amps High-Speed,Temp-Compensated Single-Ended Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor – Note 1  ‐VGSS  Gate Voltage to Drain or Source  50V  ‐VDSO  Drain to Source Voltage  50V  ‐IG(f)  Gate Forward Current  10mA  Maximum Power Dissipation  Device Dissipation @ Free Air – Total                 300mW    MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  | V GS1‐2 / T| max.  DRIFT VS.  80  µV/°C  VDG=10V, ID=200µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.  OFFSET VOLTAGE  40  mV  VDG=10V, ID=200µA  TYP.  60  ‐‐    ‐‐  ‐‐  0.6    ‐‐  1    ‐‐  ‐‐    ‐4  ‐‐  ‐‐  5    ‐‐  0.2    ‐‐    ‐‐  20    ‐‐  ‐‐  MAX.  ‐‐  ‐‐    7000  2000  3    10  5    ‐2.5  ‐2.3    ‐15  ‐10  100  5    20  2    ‐‐    0.5  ‐‐    8  1.5  UNITS  V  V    µmho  µmho  %    mA  %    V  V    pA  nA  pA  pA    µmho  µmho    dB    dB  nV/√Hz    pF  pF  CONDITIONS  VDS = 0                  ID=1nA        I G= 1nA               ID= 0               IS= 0    VDG= 10V         VGS= 0V      f = 1kHz       VDG= 15V         ID= 200µA    f = 1kHz      VDG= 10V              VGS= 0V      VDS= 15V               ID= 1nA                VDS=15V                 ID=200µA    VDG= 15V ID= 200µA  TA= +125°C   VDS =0  VDG= 15V         TA= +125°C    VDG= 10V              VGS= 0V  VDG=  15V            ID= 500µA    VDS = 10 to 20V        ID=30µA  VDS= 15V      VGS= 0V       RG= 10M  f= 100Hz           NBW= 6Hz  VDS=15V   ID=200µA   f=10Hz  NBW=1Hz    VDS= 15V      ID= 200µA      f= 1MHz    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  BVGSS  Breakdown Voltage  50  BVGGO  Gate‐To‐Gate Breakdown  ±50  TRANSCONDUCTANCE      YfSS  Full Conduction  2000  YfS  Typical Operation  1000  |YFS1‐2 / Y FS|  Mismatch  ‐‐    DRAIN CURRENT    IDSS  Full Conduction  0.5  |IDSS1‐2 / IDSS|  Mismatch at Full Conduction  ‐‐      GATE VOLTAGE  VGS(off) or Vp  Pinchoff voltage  ‐0.5  VGS(on)  Operating Range  ‐‐      GATE CURRENT  ‐IGmax.  Operating  ‐‐  ‐IGmax.  High Temperature  ‐‐  ‐IGSSmax.  At Full Conduction  ‐‐  ‐IGSSmax.  High Temperature  5    OUTPUT CONDUCTANCE    YOSS  Full Conduction  ‐‐  YOS  Operating  ‐‐    COMMON MODE REJECTION    CMR  ‐20 log | V GS1‐2/ V DS|  95    NOISE    NF  Figure  ‐‐  en  Voltage  ‐‐      CAPACITANCE  CISS  Input  ‐‐  CRSS  Reverse Transfer  ‐‐  Click To Buy Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired PDIP / SOIC (Top View) Micross Components Europe Available Packages: LSU406 in PDIP / SOIC LSU406 available as bare die Please contact Micross for full package and die dimensions Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.