18KWR0327

13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05 18KWR0327 Chip Device Layout Features Fundamental Image Reject Mixer GaAs HBT Technology 7.0 dB Conversion Loss 20.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s 13.0-25.0 GHz GaAs MMIC fundamental image reject Kowari mixer can be used as an up- or down-converter. The device has a conversion loss of 7.0 dB with 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 2 µm GaAs HBT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Input Power (RF Pin) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) +20 dBm +20 dBm -65 to +165 OC -55 to +125 OC Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) RF Return Loss (S11) IF1/IF2 Return Loss (S22) LO Return Loss (S33) Conversion Loss (S21) LO Input Drive (PLO) Image Rejection Isolation LO/RF Isolation LO/IF Isolation RF/IF Output Third Order Intercept (OIP3) Units GHz GHz GHz GHz dB dB dB dB dBm dBc dB dB dB dBm Min. 15.0 13.0 11.0 DC Typ. 10.0 10.0 TBD 7.0 +16.0 20.0 TBD TBD TBD +12.0 Max. 25.0 25.0 29.0 4.0 Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. Pr Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com e- pr od uc tio n 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05 18KWR0327 Mixer Measurements 2902_0327: USB conversion gain vs. RF freq LO=16dBm, IF=2GHz, RF=-20dBm 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 10 12 14 16 18 20 22 24 26 28 2 902_ 0327 _R2C 2_USB_16 0220 04_1 623.mix 2 902_ 0327 _R5C 5_USB_16 0220 04_1 634.mix 2 902_ 0327 _R3C 3_USB_16 0220 04_1 630.mix 2 902_ 0327 _R2C 6_USB_16 0220 04_1 627.mix 2 902_ 0327 _R6C 2_USB_16 0220 04_1 637.mix 2902_0327: LSB conversion gain vs. RF freq LO=16dBm, IF=2GHz, RF=-20dBm 0 -2 -4 -6 LSB conversion gain (dB) -8 -10 -12 -14 -16 -18 -20 8 10 12 14 16 RF freq (GHz) 18 RF freq (GHz) 2902_0327: image rejection vs. RF freq LO=16dBm, IF=2GHz, RF=-20dBm 0 0 -10 USB image rejection (dBc) -15 2 902_ 0327 _R2C 2_USB_16 0220 04_1 623.mix 2 902_ 0327 _R5C 5_USB_16 0220 04_1 634.mix 2 902_ 0327 _R3C 3_USB_16 0220 04_1 630.mix 2 902_ 0327 _R2C 6_USB_16 0220 04_1 627.mix 2 902_ 0327 _R6C 2_USB_16 0220 04_1 637.mix od -10 LSB image rejection (dBc) -15 -20 -25 -30 -35 -40 8 10 12 14 16 RF freq (GHz) 18 20 22 24 -5 -5 uc 2902_0327: image rejection vs. RF freq LO=16dBm, IF=2GHz, RF=-20dBm -20 -25 -30 -35 -40 10 12 14 16 18 20 22 24 26 28 RF freq (GHz) Pr e- pr Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n 20 22 24 USB conversion gain (dB) 2 902_ 0327 _R2C 2_LSB_16 0220 04_1 642.mix 2 902_ 0327 _R5C 5_LSB_16 0220 04_1 652.mix 2 902_ 0327 _R3C 3_LSB_16 0220 04_1 648.mix 2 902_ 0327 _R2C 6_LSB_16 0220 04_1 645.mix 2 902_ 0327 _R6C 2_LSB_16 0220 04_1 655.mix 2 902_ 0327 _R2C 2_LSB_16 0220 04_1 642.mix 2 902_ 0327 _R5C 5_LSB_16 0220 04_1 652.mix 2 902_ 0327 _R3C 3_LSB_16 0220 04_1 648.mix 2 902_ 0327 _R2C 6_LSB_16 0220 04_1 645.mix 2 902_ 0327 _R6C 2_LSB_16 0220 04_1 655.mix Page 2 of 6 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05 18KWR0327 Mixer Measurements (cont.) 2902_0327: USB conversion gain vs. RF freq LO=varied, IF=2GHz, RF=-20dBm 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 10 12 14 16 18 20 22 24 26 28 U SB image rejection (dBc) 2902_0327: image rejection vs. RF freq LO=varied, IF=2GHz, RF=-20dBm 5 0 -5 -10 -15 -20 -25 -30 -35 -40 10 12 14 16 18 20 22 290 2_03 27_R 3C3_ USB_ 1602 2004 _161 5_15 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 8_10 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 4_14 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 0_17 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _161 9_16 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _173 2_12 dBm.mix RF freq (GHz) 2902_0327: USB conversion gain vs. RF freq LO=16dBm, IF=2GHz, RF=varied 0 -2 -4 -6 -8 290 2_0 327_ R3C3_ USB_ 1602 2004 _173 5_-15 dBm.mix 0 od -10 USB image rejection (dBc) -5 USB conversion gain (dB) -15 uc RF freq (GHz) 10 12 14 16 18 RF freq (GHz) 2902_0327: image rejection vs. RF freq LO=16dBm, IF=2GHz, RF=varied -10 -12 -14 -16 -18 -20 10 12 14 16 18 RF freq (GHz) 20 22 24 26 290 2_0 327_ R3C3_ USB_ 1602 2004 _174 0_-5d Bm.mi x 290 2_0 327_ R3C3_ USB_ 1602 2004 _173 8_-10 dBm.mix 290 2_0 327_ R3C3_ USB_ 1602 2004 _174 4_0d Bm.mi x -20 -25 -30 pr -35 -40 20 22 24 26 Pr e- Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n 24 26 28 USB conversion gain (dB) 290 2_03 27_R 3C3_ USB_ 1602 2004 _161 5_15 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 8_10 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 4_14 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _172 0_17 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _161 9_16 dBm.mix 290 2_03 27_R 3C3_ USB_ 1602 2004 _173 2_12 dBm.mix 290 2_0 327_ R3C3_ USB_ 1602 2004 _173 5_-15 dBm.mix 290 2_0 327_ R3C3_ USB_ 1602 2004 _174 0_-5d Bm.mi x 290 2_0 327_ R3C3_ USB_ 1602 2004 _173 8_-10 dBm.mix 290 2_0 327_ R3C3_ USB_ 1602 2004 _174 4_0d Bm.mi x Page 3 of 6 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05 Mechanical Drawing 1.424 (0.056) 2.500 (0.098) 18KWR0327 2 1.885 (0.074) 1 3 1.250 (0.049) 4 0.0 0.0 od 1.424 (0.056) (Note: Engineering designator is 18KWR0327) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.25 mg. Bond Pad #1 (RF) Bond Pad #3 (LO) Bond Pad #2 (IF1) Bond Pad #4 (IF2) 1 RF Pr eIF1 2 3 RF Arrangement 4 IF2 pr LO uc 2.100 (0.083) Page 4 of 6 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05 18KWR0327 App Note [1] USB/LSB Selection - LSB USB IF2 IF1 An alternate method of Selection of USB or LSB: od For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. pr IF1 USB LSB e- In Phase Combiner In Phase Combiner uc Pr -90o IF2 IF2 IF1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. tio n -90o For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. Page 5 of 6 13.0-25.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05 18KWR0327 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. Pr Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. e- pr od ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. uc Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. tio n