CFB0303

High Dynamic Range Low Noise GaAs FET August 2006 - Rev 03-Aug-06 CFB0303 Features Low-Noise Figure from 0.8 to 2.0 GHz High Gain High Intercept Point Highly Stable Easily Matched to 50 70 mil Package PHEMT Material Applications Cellular Base Stations PCS Base Stations Industrial Data Networks Description Celeritek’s CFB0303 is a high performance GaAs PHEMT with 600 µm gate width and 0.25 µm gate length. The low noise figure and high intercept point of this device makes it well suited for use as the low-noise amplifier of the base station receiver in PCS, Japanese PHS, AMPS, GSM and other communications systems. The CFB0303 is in an industry-standard 70 mil package. It is surface mountable and available in tape and reel. Electrical Specifications (TA = 25°C, 2 GHz) Parameters Conditions Min Typ Max Units Vd = 4V, Id = 75 mA Noise Figure 2 Associated Gain 2 Pout 1, 3 IP3 3 Id 3 Transconductance Saturated Drain Current Pinchoff Voltages Thermal Resistance @ Noise Figure P-1 +5 dBm POUT/Tone @ P-1 Vds = 4 V, Vgs = 0 V Vds = 4 V, Vgs = 0 V Vds = 4 V, Ids = 1 mA @ Tcase = 150°C liquid crystal test 19.0 20.0 32 0.5 20.0 21.0 34 83 350 0.6 22.7 22.0 dB dB dBm dBm mA mho 80 140 -0.3 200 240 mA V °C/W Notes: 1. @ T case = 25°C. Derate 5 mW/°C for Tcase >25°C. 2. Input matched for low noise. 3. Matched for power transfer. Typical Scattering Parameters (TA = 25°C, VDS = 4 V, IDS = 75 mA) Frequency (GHz) S11 Mag Ang Mag (dB) S21 Ang MAG (dB) S12 ANG MAG S22 ANG 0.5 1.0 2.0 3.0 4.0 5.0 0.98 0.94 0.85 0.76 0.70 0.64 -24 -44 -80 -112 -134 -154 8.47 8.20 7.30 6.30 5.60 5.13 160 147 118 94 74 54 0.02 0.03 0.05 0.07 0.08 0.09 77 69 51 37 29 19 0.33 0.32 0.27 0.25 0.24 0.23 -9 -15 -36 -50 -55 -61 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 2 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. High Dynamic Range Low Noise GaAs FET August 2006 - Rev 03-Aug-06 CFB0303 Absolute Maximum Ratings Parameter Rn/50 Symbol Rating Gamma Opt Mag Ang Typical Noise Parameters (Vds = 4 V, Ids = 75 mA) Frequency (GHz) Fmin 1 (dB) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.4 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.6 0.6 0.6 0.6 0.5 0.5 0.5 0.5 0.5 0.5 27 29 32 35 38 41 45 49 54 60 0.19 0.17 0.18 0.18 0.17 0.16 0.15 0.15 0.14 0.13 Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation1 Channel Temperature Storage Temperature Vds Vgs Ids Pt Tch Tstg +8V -5V Idss 750 mW 175°C -65°C to +150°C Note: 1. Fmin values reflect the circuit losses in the test fixture when matched to optimum noise figure. Notes Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 2 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.