GALI-5+

Surface Mount Monolithic Amplifier DC-4 GHz Product Features • InGaP HBT microwave amplifier • Miniature SOT-89 package • Internally Matched to 50 Ohms • Frequency range, DC to 4 GHz • Output power, 18.0 dBm typ. • Excellent package for heat dissipation, exposed metal bottom • Low thermal resistance for high reliability • Aqueous washable • Protected by US Patent 6,943,629 Generic photo used for illustration purposes only Gali 5+ CASE STYLE: DF782 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Typical Applications • Cellular • PCS • Communication receivers & transmitters General Description Gali 5+ (RoHS compliant) is a wideband amplifier offering high dynamic range. Lead finish is SnAgNi. It has repeatable performance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 3,000 years at 85°C case temperature. Gali 5+ is designed to be rugged for ESD and supply switch-on transients. simplified schematic and pin description RF-OUT and DC-IN 3 RF-OUT & DC-IN RF IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF-OUT and DC-IN 3 RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. GND 2,4 Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path inductance for best performance. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com REV. S M151107 D60129 EE-7974Q GALI-5+ RS/YB/FL 200430 Page 1 of 4 Gali 5+ Monolithic InGaP HBT MMIC Amplifier Electrical Specifications at 25°C and 65mA, unless noted Parameter Min. Frequency Range* Typ. DC Gain Max. Units 4 GHz dB f=0.1 GHz — 20.6 — f=1 GHz — 19.4 — f=2 GHz 16 17.5 — f=3 GHz — 16.0 — f=4 GHz — 14.9 — f=6 GHz — 15.1 — Input Return Loss f= DC to 3 GHz Output Return Loss f= DC to 3 GHz 21 f= 3 to 4 GHz dB 21 15.5 f= 3 to 4 GHz dB 15.5 Output Power @ 1 dB compression f=1 GHz 16.0 Output IP3 f=1 GHz 35 dBm Noise Figure f=1 GHz 3.5 dB Recommended Device Operating Current 18.0 — 65 Device Operating Voltage 4.0 4.4 Device Voltage Variation vs. Temperature at 65 mA dBm mA 4.9 V -3.3 mV/°C Device Voltage Variation vs. Current at 25°C 3.8 mV/mA Thermal Resistance, junction-to-case1 103 °C/W *Guaranteed specification DC-4 GHz. Low frequency cut off determined by external coupling capacitors. Absolute Maximum Ratings Parameter Ratings Operating Temperature* -45°C to 85°C Storage Temperature -65°C to 150°C Operating Current 85mA Input Power 13dBm Note: Permanent damage may occur if any of these limits are exceeded. These ratings are not intended for continuous normal operation. 1 Case is defined as ground leads. *Based on typical case temperature rise 4°C above ambient. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 2 of 4 Gali 5+ Monolithic InGaP HBT MMIC Amplifier Product Marking 4 05 1 2 3 Markings in addition to model number designation may appear for internal quality control purposes. Additional Detailed Technical Information Additional information is available on our web site. To access this information enter the model number on our web site home page. Performance data, graphs, s-parameter data set (.zip file) Case Style: DF782 Plastic package, exposed paddle, lead finish: Matte-Tin Tape & Reel: F55 7” reels with 20, 50, 100, 200, 500, 1K devices. Suggested Layout for PCB Design: PL-019 Evaluation Board: TB-409-5+ Environmental Ratings: ENV08T2 Recommended Application Circuit R BIAS R bias (R equired) V cc C bypas s C block IN 4 Ibias R F C (Optional) 3 Vd 1 2 OUT C block Test Board includes case, connectors, and components (in bold) soldered to PCB Vcc “1%” Res. Values (ohms) for Optimum Biasing 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40.2 53.6 68.1 82.5 97.6 113 127 143 158 174 191 205 221 237 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 3 of 4 Gali 5+ Monolithic InGaP HBT MMIC Amplifier ESD Rating Human Body Model (HBM): Class 1B (500v to