FLAT GAIN, HIGH IP3
Monolithic Amplifier
50Ω
GVA-62+
0.01 to 6 GHz
THE BIG DEAL
y Flat Gain, ±0.7 dB over 50-4000 MHz
y Gain, 15.4 dB typ. at 2 GHz
y High Pout, P1dB 19.8 dBm typ. at 2 GHz
y High IP3, 37.8 dBm typ. at 50 MHz; 33.6 dBm at 2GHz
y Excellent ESD protection, Class 1C for HBM
y Ultra Flat Gain
y Broadband High Dynamic Range without external Matching Components
y May be used as a replacement to RFMD SBB4089Za,b
Generic photo used for illustration purposes only
CASE STYLE: DF782
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
FREE X-PARAMETERS*
APPLICATIONS
y Base station infrastructure
y Portable Wireless
y CATV & DBS
y MMDS & Wireless LAN
y LTE
PRODUCT OVERVIEW
GVA-62+ (RoHS compliant) is an wideband amplifier fabricated using InGap HBT technology and offers ultra flat gain over
a broad frequency range and with high IP3. In addition, the GVA-62+, has good input and output return loss over a broad
frequency range without the need for external matching components and has demonstrated excellent reliability. Lead finish is
SnAgNi. It has repeatable performance from lot to lot and is enclosed in a SOT-89 package for very good thermal performance.
KEY FEATURES
Feature
Advantages
Broad Band: 0.01 to 6.0 GHz
Broadband covering primary wireless communications bands:
Cellular, PCS, LTE, WiMAX
Ultra Flat Gain, 15 dB
±0.8 dB over 50 to 6000 MHz; ±0.20 dB over 700 to 2700 MHz
eliminates need for gain flattening for most applications
High IP3 vs. DC power Consumption
39 dBm typical at 0.05 GHz
37 dBm typical at 0.8 GHz
The GVA-62+ matches industry leading IP3 performance relative to device size and power consumption. The
combination of the design and InGap HBT Structure provides enhanced linearity over a broad frequency range as
evidence in the IP3 being typically 20 dB above the P 1dB point to 0.8 GHz. This feature makes this amplifier ideal
for use in:
y Driver amplifiers for complex waveform up converter paths
y Drivers in linearized transmit systems
No External Matching Components
Required
GVA-62+ provides Input and Output Return Loss of 10-23 dB up to 3 GHz without the need for any external
matching components
*X-parameters is a registered trademark of Agilent Technologies, Inc. The X-parameters format and underlying equations are open and documented.
For more information, refer to X-parameters Open Documentation, Trademark Usage & Partnerships
A. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance
criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
B. The RFMD SBB-4089Z part number is used for identification and comparison purposes only.
REV.B
ECO-010563
GVA-62+
TH/RS/CP
211108
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 1 OF 2
FLAT GAIN, HIGH IP3
Monolithic Amplifier
GVA-62+
ELECTRICAL SPECIFICATIONS1,2 AT 25°C, UNLESS NOTED
Parameter
Condition (GHz)
Frequency Range2
Gain
Gain Flatness
Min.
Typ.
0.01
Max.
Units
6
GHz
0.05
14.8
16.5
18.2
0.8
13.9
15.6
17.2
2.0
—
15.4
—
3.0
—
15.3
—
4.0
13.5
15.0
16.5
6.0
—
14.5
—
0.05 - 3.0
±0.7
0.7 - 2.6
±0.2
dB
dB
0.05
—
16.5
—
0.8
10.0
13.7
—
2.0
—
13.9
—
3.0
—
15.9
—
4.0
—
19.3
—
6.0
—
20.7
—
0.05
—
12.8
—
0.8
12.0
17.4
—
2.0
—
17.1
—
3.0
—
15.0
—
4.0
—
12.4
—
6.0
—
8.8
—
2.0
—
21.9
—
0.05
17.5
19.7
—
0.8
17.5
19.8
—
2.0
17.2
19.2
—
3.0
—
17.8
—
4.0
—
15.9
—
6.0
—
11.7
0.05
—
37.8
—
1.0
—
37.5
—
2.0
31.5
33.6
—
3.0
—
30.4
—
4.0
—
28.1
—
6.0
—
23.0
—
0.05
—
4.7
6.2
1.0
—
5.0
—
2.0
—
5.1
6.6
3.0
—
5.1
—
4.0
—
5.2
—
6.0
—
5.6
—
Device Operating Voltage
4.8
5.0
5.2
V
Device Operating Current
72
82
92
mA
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power at 1dB Compression
Output IP3
Noise Figure
Device Current Variation vs. Temperature3
Device Current Variation vs. Voltage
Thermal Resistance, junction-to-ground lead
dB
dB
dBm
dBm
dB
dB
62
µA/°C
0.035
mA/mV
64
°C/W
(1) Measured on Mini-Circuits Characterization test board TB-313. See Characterization Test Circuit (Fig. 1)
(2) Low Frequency cut-off determined by external coupling capacitors and external bias choke.
(3) Current at 85°C — Current at -45°C)/130
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 2 OF 2
FLAT GAIN, HIGH IP3
Monolithic Amplifier
MAXIMUM RATINGS
Parameter
Operating Temperature (ground lead)
Storage Temperature
60
Ratings
50
-40°C to 85°C
40
-65°C to 150°C
Operating Current at 5V
120 mA
Power Dissipation
0.725 W
Input Power (CW)
24 dBm
30
20
10
0
More
90-92
88-90
86-88
84-86
82-84
80-82
78-80
76-78
Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
For continuous operation, do not exceed 5.2V device voltage.
74-76
6V
72-74
DC Voltage on Pin 3
GVA-62+
DC Current (mA)
SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION
RF-OUT
and DC-IN
RF-IN
3 RF-OUT & DC-IN
4
2 GROUND
1 RF-IN
GND
Function
Pin
Number
Description
RF IN
1
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
RF-OUT
and DC-IN
3
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper operation. An RF choke
is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”, Fig. 2
GND
2,4
Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path inductance for best
performance.
A. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance
criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
B. The RFMD SBB4089Z part number is used for identification and comparison purposes only.
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 3 OF 4
FLAT GAIN, HIGH IP3
Monolithic Amplifier
GVA-62+
CHARACTERIZATION TEST CIRCUIT
Vcc (Supply Voltage)
3 +5V
1
RF-IN
2,4
DUT
BLK-18+
RF-OUT
Fig 1. Block Diagram of Test Circuit used for characterization. (DUT
soldered on Mini-Circuits Characterization test board TB-313) Gain,
Return loss, Output power at 1dB compression (P1 dB) , output IP3
(OIP3) and noise figure measured using Agilent’s N5242A PNA-X
microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone
at output.
Bias-Tee
ZX85-12G-S+
TB-313
RECOMMENDED APPLICATION CIRCUIT
Vcc
RF-IN
4
Cblock
Cbypass
Ibias
RFC
RF-OUT
3
Vd
1
Fig 2. Test Board includes case, connectors, and components
soldered to PCB
Cblock
2
PRODUCT MARKING
V62
Marking may contain other features or characters for internal lot control
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 4 OF 4
FLAT GAIN, HIGH IP3
Monolithic Amplifier
GVA-62+
ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS
C LIC K HERE
Data Table
Performance Data
Swept Graphs
S-Parameter (S2P Files) Data Set (.zip file)
Case Style
DF782 (SOT 89)
Plastic package, exposed paddle lead finish: Matte-tin
Tape & Reel
Standard quantities available on reel
F55
7” reels with 20, 50, 100, 200, 500 or 1K devices
Suggested Layout for PCB Design
PL-255
Evaluation Board
TB-410-62+
Environmental Ratings
ENV08T1
ESD RATING
HHuman Body Model (HBM): Class 1C (1000 to
