LHA-83W+

LHA-83W+

  • 厂商:

    MINI

  • 封装:

    VQFN12_3X3MM_EP

  • 描述:

    超宽带高动态范围单片射频放大器

  • 详情介绍
  • 数据手册
  • 价格&库存
LHA-83W+ 数据手册
ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier 50Ω LHA-83W+ 50 MHz to 8 GHz THE BIG DEAL y Ultra Wideband, 0.05 - 8GHz y Excellent Gain Flatness 16.8±2.4dB Typ. y High Linearity, +23.3 dBm P1dB & +35.1 dBm OIP3 y Robust ESD performance (Class 1B) Generic photo used for illustration purposes only CASE STYLE: DQ1225 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS y WiFi y WLAN y LTE y WiMAX y S-band Radar y C-Band Satcom PRODUCT OVERVIEW The LHA-83W+ (RoHS compliant) is an advanced wideband amplifier fabricated using PHEMT technology and offers extremely high dynamic range over a broad frequency range and with excellent gain flatness. In addition, the LHA-83W+ has good input and output return loss over a broad frequency range. LHA-83W+ is enclosed in a 3x3mm, 12-lead MCLP package and has very good thermal performance. KEY FEATURES Feature Advantages Ultra Wideband: 50 MHz to 8 GHz Broadband covering primary wireless communications bands Extremely High IP3 35.4dBm typ. at 50 MHz 36.3 dBm typ. at 6 GHz The LHA-83W+ matches industry leading IP3 performance relative to device size and power consumption. The combination of the design and PHEMT Structure provides enhanced linearity over a broad frequency range as evidence in the IP3 being approximately 12 dB above the P1dB point. This feature makes this amplifier ideal for use in: y Driver amplifiers for complex waveform up converter paths y Drivers in linearized transmit systems y Secondary amplifiers in ultra-High Dynamic range receivers Excellent Gain Flatness Typical ±2.4 dB gain flatness across the entire frequency range minimizes the need for external equalizer networks making it a great fit for instrumentation and EW application. REV. A ECO-011665 LHA-83W+ MCL NY 220222 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 5 ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier LHA-83W+ ELECTRICAL SPECIFICATIONS1 AT 25°C, 50Ω, UNLESS NOTED OTHERWISE Parameter VDD=9V1 Condition (MHz) Min. Frequency Range Gain Gain flatness Input Return Loss Output Return Loss Output Power @1dB compression Output IP3 (Pout = 0dBm/Tone) Noise Figure 50 15 14.9 14.9 15 50 2000 4000 6000 8000 50-8000 50 2000 4000 6000 8000 50 2000 4000 6000 8000 50 2000 4000 6000 8000 50 2000 4000 6000 8000 50 2000 4000 6000 8000 Device Operating Voltage Device Operating Current Device Current Variation vs. Temperature3 Device Current Variation vs. Voltage4 8.5 Thermal Resistance Junction-To-Ground Lead at 85°C stage temperature Typ. 16.7 16.7 16.8 16.7 11.8 2.4 23.8 25.7 23.5 13.9 2.2 17.8 28.1 20.4 33.8 3.9 23.6 23.8 23.3 22.2 17.5 35.4 35.7 35.1 36.3 30.6 3.2 2.7 3.1 3.8 4.9 9 105 38.5 0.017 VDD=5V1 Vs=9V2 Vs=5V2 Max. Typ. Typ. Typ. 8000 18.4 18.3 18.3 18.4 50-8000 15.2 14.8 14.2 12.7 8.2 3.5 19.3 16.4 18.5 12.2 3.4 28.8 19.8 15.6 10.6 4.5 15.9 16.3 16.1 15.8 12.2 23 23.5 22.9 22.7 19.5 2.8 2.5 2.9 3.5 4.6 5 39.6 38.5 0.016 50-8000 16.4 16.4 16.4 16.3 12.5 1.95 15.9 17.1 20.1 22.3 2.8 13.4 24.8 22.4 20.4 5.7 23.2 22.8 23 22.1 17 35 34.7 34.4 35 30.6 3.3 2.8 3.1 3.8 4.9 9 104 38.5 0.017 50-8000 14.8 14.3 14 12.7 8.5 3.1 15.1 12.3 15.3 15.7 4.2 18.1 15.1 19.7 13.4 5.8 15.5 15.2 15.5 16 11.6 22.9 22.4 22.8 24.3 19.7 2.8 2.6 2.9 3.5 4.6 5 39 38.5 0.016 V mA µA/°C mA/mV 41 41 41 °C/W 9.5 127 41 Units MHz dB dB dB dB dBm dBm dB 1. Measured on Mini-Circuits Characterization Test Board TB-LHA-83W+. See Characterization Test Circuit (Figure 1). 2. Measured on Mini-Circuits Application Evaluation Board TB-LHA-83WE+. See Application Test Circuit (Figure 2). 3. Device Current Variation vs. Temperature= (Current at 85°C ­- Current at -45°C)/130 4. Device Current Variation vs. Voltage = (Current at 9.5V - Current at 8.5V) / ((9.5V-8.5V)*1000 mV/V) MAXIMUM RATINGS4 Parameter Operating temperature (ground lead) Storage temperature Ratings -40°C to 85°C -65°C to 150°C Power dissipation 1.58W Input power (CW) 18 dBm (continuous) 24 dBm (5 minutes max) DC voltage on Pin 5 10.5V 5.Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 2 OF 5 ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier LHA-83W+ SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION NC NC NC RF-OUT and DC-IN RF-IN 9 8 7 NC 10 6 RF-IN 11 5 RF-OUT & DC-IN NC 12 4 NC NC GND 1 2 3 NC NC NC Function Pad Number Description RF-IN 11 RF-OUT and DC-IN 5 RF Output and DC Bias GND Paddle Connections to ground. NC 1-4, 6-10 & 12 RF input pin. No connection, connected to ground externally on test board CHARACTERIZATION TEST CIRCUIT VDD TB-LHA-83W+ 11 RF-IN BLK-18+ (or DC Block of PNA-X) DUT 5 1-4,6-10, 12 & Paddle RF-OUT ZX85-12G-S+ (or Internal Bias Tee of PNA-X) Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-LHA-83W+) Gain, Return loss, Output power at 1dB compression (P1dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 3 OF 5 R1 ULTRA HIGH DYNAMIC RANGE C1 L1 Monolithic Amplifier RF-IN 11 C2 5 DUT 1-4,6-10, 12 & Paddle RF-OUT LHA-83W+ APPLICATION TEST CIRCUIT VS TB-LHA-83WE+ C4 C3 R1 RF-IN C1 L1 11 C2 5 DUT 1-4,6-10, 12 & Paddle RF-OUT Fig 2. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Application test board TB-LHA-83WE+) Gain, Return loss, Output power at1dB compression (P1dB), output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two Tones spaced 1 MHz apart, 0 dBm/ tone at output. PRODUCT MARKING Index over pin MCL 83W Black body Model family designation Marking may contain other features or characters for internal lot control www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 4 OF 5 ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier LHA-83W+ ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS Performance Data Data Table Swept Graphs Case Style DQ1225 Plastic package, exposed paddle lead finish: Matte-Tin Tape & Reel Standard quantities available on reel F66 7” reels with 20, 50, 100, 200, 500, 1K, or 2K devices Suggested Layout for PCB Design PL-660 Evaluation Board TB-LHA-83WE+ Environmental Ratings ENV08T1 C LIC K HERE ESD RATING Human Body Model (HBM): Class 1B(500 to
LHA-83W+
物料型号: LHA-83W+

器件简介: - 该器件是一款超宽带放大器,由Mini-Circuits制造,使用pHEMT技术制造。 - 它提供非常宽的频率范围和高动态范围,并具有出色的增益平坦度。

引脚分配: - RF-IN:11号引脚,射频输入端。 - RF-OUT和DC-IN:5号引脚,射频输出和直流偏置输入。 - GND:接地,引脚为Paddle形状。 - NC:1-4, 6-10和12号引脚,无连接,在测试板上外部接地。

参数特性: - 频率范围:50 MHz 至 8 GHz。 - 增益:在50 MHz时最小增益为15 dB,典型增益为16.7 dB,最大增益为18.4 dB。 - 增益平坦度:整个频率范围内典型值为2.4 dB。 - 输入回波损耗:在50 MHz至8 GHz范围内,典型值从19.3 dB至23.8 dB不等。 - 输出回波损耗:在50 MHz时最小值为17.8 dB,典型值为28.8 dB。 - 输出1 dB压缩点功率:在50 MHz时为23.6 dBm,典型值为15.9 dBm。 - 输出三阶截断点(IP3):在50 MHz时典型值为35.4 dBm。 - 噪声系数:在50 MHz时为3.2 dB,典型值为2.8 dB。

功能详解: - 该放大器设计用于在超宽带宽内提供高动态范围,适用于无线通信、雷达和卫星通信等应用。 - 其设计和pHEMT结构提供了在宽频率范围内的增强线性度,如IP3在P1dB点以上约12 dB。 - 适用于复杂波形上变频器路径的驱动放大器、线性化发射系统中的驱动器以及超宽带接收机的次级放大器。

应用信息: - 适用于WiFi WLAN、LTE WiMAX S波段雷达、C波段卫星通信等应用。

封装信息: - 封装类型:DQ1225。 - 封装符合RoHS指令,+后缀表示符合RoHS合规性。
LHA-83W+ 价格&库存

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LHA-83W+
  •  国内价格 香港价格
  • 1+151.886971+19.58662
  • 20+90.8639220+11.71738
  • 50+84.5938650+10.90882
  • 100+78.11122100+10.07285
  • 200+69.92809200+9.01760
  • 500+64.82733500+8.35983
  • 1000+62.465031000+8.05520

库存:0

LHA-83W+
  •  国内价格 香港价格
  • 2000+55.368912000+7.14011

库存:0