MNA-3A+

HIGH DIRECTIVITY Monolithic Amplifier 50Ω MNA-3A+ 0.5 to 2.5 GHz THE BIG DEAL y Integrated matching, DC Blocks and bias circuits y High Active Directivity, 16-25 dB typ. y Choice of supply voltage, 2.8V to 5V y Micro-miniature size .120”X.120” y Output power, up to +11.6 dBm typ. at 500 MHz y Aqueous washable Generic photo used for illustration purposes only CASE STYLE: DQ849 APPLICATIONS y Buffer amplifier y Cellular y PCN y Communications satellite y Defense PRODUCT OVERVIEW MNA-3A+ is a wideband PHEMT based MMIC amplifier with high active Directivity. MNA integrates the entire matching network and majority of the bias circuit inside the package, reducing the need for complicated external circuits. This approach makes the MNA amplifier extremely straightforward to use. This design operates on a single 2.8 to 5V supply, is well matched for 50Ω and comes in a tiny, low profile 3x3mm 8-lead MCLP package accommodating dense circuit board layouts. MNA-3A+ belongs to MNA series of models available in Die and packaged form. KEY FEATURES Feature Advantages Excellent Active Directivity (Isolation- Gain) 16-25 dB Ideal for use as a buffer amplifier minimizing interaction of adjacent circuits Integrates DC blocks and RF choke Minimizes external components, component count and circuit area. Single 2.8 to +5V operation Amplifier can be used at low voltage such as +3V or standard +5V. +5V operation results in higher P1dB and OIP3. 3 x 3mm 8-lead MCLP package Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact to the PCB. REV. A ECO-011187 MNA-3A+ MCL NY 220928 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 5 HIGH DIRECTIVITY Monolithic Amplifier MNA-3A+ ELECTRICAL SPECIFICATIONS1 AT 25°C Parameter Condition (GHz) Frequency Range Gain Input Return Loss Output Return Loss Output Power at P1dB Output IP3 Noise Figure Active Directivity (Isolation-Gain) DC Current Device Current Variation vs. Temperature(2) Device Current Variation vs Voltage Thermal resitance at 85°C 0.5 0.75 1.0 1.5 2.0 2.5 0.5 0.75 1.0 1.5 2.0 2.5 0.5 0.75 1.0 1.5 2.0 2.5 0.5 0.75 1.0 1.5 2.0 2.5 0.5 0.75 1.0 1.5 2.0 2.5 0.5 0.75 1.0 1.5 2.0 2.5 0.5 0.75 1.0 1.5 2.0 2.5 Min. 0.5 — — — — 14.9 — — Vs=5V Typ. 12.9 15.5 16.4 16.8 16.5 15.5 4.4 14.1 24.4 16.7 19.4 14.2 15.0 22.3 30.7 25.1 20.2 18.5 11.6 11.6 11.0 10.3 9.5 9.5 23.3 24.1 22.9 22.0 21.0 21.0 4.5 4.1 3.9 3.9 4.0 4.1 25.4 19.3 17.3 16.3 16.8 18.7 34.3 16 0.00043 69.9 Max. 2.5 — — — — 18.2 — 43 Vs=2.8V Typ. 0.5-2.5 12.0 14.4 15.2 15.5 15.2 14.2 4.7 14.2 21.5 17.0 18.6 13.8 13.9 18.8 22.4 22.9 18.0 15.0 10.0 10.4 10.0 9.3 8.6 8.4 21.0 21.7 21.0 20.2 19.4 19.2 4.5 4.2 4.0 4.0 4.1 4.2 25.9 20.0 18.0 16.7 16.7 17.7 32.6 6 0.00124 69.9 Units GHz dB dB dB dBm dBm dB dB mA μA/°C mA/mV °C/W 1. Measured on Mini-Circuits Characterization test board TB-186-3A+. See Characterization Test Circuit (Fig. 1) 2. (Current at 85°C -Current at -45°C)/130 3. (Current at 5.25V-Current at 3.9V)/1.35 4. (Current at 3.9V-Current at 2.66V)/1.24 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 2 OF 5 HIGH DIRECTIVITY Monolithic Amplifier MNA-3A+ MAXIMUM RATINGS5 Parameter Ratings Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C 7V at pad 7 (on TB-186-3A+) 1V at pads 2 & 5 DC Voltage Power Dissipation 650 mW 6 dBm (continuous operation) 28 dBm (5 minutes max) Input Power 5.Permanent damage may occur if any of these limits are exceeded. These ratings are not intended for continuous normal operation SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION DUT ESD Protection Diodes ESD Protection Diodes Function Pad Number Description (See Fig 1) RF IN 2 RF input pin RF-OUT 5 RF output pin DC 7,8 DC Bias pads 7,8. Pad 7 connected to ground via 1000 pF. Pad 8 connected to pad 7 via 33.2 ohms. NC 1,3,4,6 Not Connected, connect pad 3 and 4 to ground externally GND Paddle Ground OPTIONAL 1,6 No internal connection; recommended use: per PCB Layout PL-078 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 3 OF 5 HIGH DIRECTIVITY Monolithic Amplifier MNA-3A+ CHARACTERIZATION & APPLICATION TEST CIRCUIT Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-313-3A+) Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, -5dBm/tone at output. TB-186+ TB-186-3A+ RECOMMENDED APPLICATION CIRCUIT Fig 2. Test Board includes case, connectors, and components soldered to PCB TB-186+ TB-186-3A+ PRODUCT MARKING index over pin 1 MCL MN3A black body model family designation Marking may contain other features or characters for internal lot control www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 4 OF 5 HIGH DIRECTIVITY Monolithic Amplifier MNA-3A+ ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS Performance Data Data Table Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style DQ849 3x3x0.9 mm MCLP Plastic package, exposed paddle lead finish: Matte-Tin Tape & Reel Standard quantities available on reel F104 7” reels with 20, 50, 100, 200, 500, 1K, or 2K devices Suggested Layout for PCB Design PL-078 Evaluation Board TB-186-3A+ Environmental Ratings ENV08T1 C LIC K HERE ESD RATING Human Body Model (HBM): Class 1A (250 to