PHA-102+

ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier 50Ω PHA-102+ 50 MHz to 6 GHz THE BIG DEAL y Ultra Wideband, 0.05 - 6GHz y Excellent gain flatness 14.3±0.3dB from 0.05-3GHz y High Linearity, +26.4dBm P1dB & +50dBm OIP3 at 0.9GHz y May be used as a replacement for AH102a,b Generic photo used for illustration purposes only CASE STYLE: DF782 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS y WiFi y WLAN y LTE y WiMAX y S-band Radar PRODUCT OVERVIEW The PHA-102+ (RoHS compliant) is an advanced wideband amplifier fabricated using PHEMT technology and offers extremely high dynamic range over a broad frequency range and with excellent gain flatness. In addition, the PHA-102+ has good input and output return loss over a broad frequency range. PHA-102+ is enclosed in a SOT-89 package and has very good thermal performance. KEY FEATURES Feature Advantages Ultra Wideband: 50MHz to 6GHz Broadband covering primary wireless communications bands Extremely High IP3 50 dBm typ. at 0.9 GHz 40.3 dBm typ. at 3 GHz The PHA-102+ matches industry leading IP3 performance relative to device size and power consumption. The combination of the design and PHEMT Structure provides enhanced linearity over a broad frequency range as evidence in the IP3 being approxi- mately 17 dB above the P1dB point. This feature makes this amplifier ideal for use in: y Driver amplifiers for complex waveform up converter paths y Drivers in linearized transmit systems y Secondary amplifiers in ultra-High Dynamic range receivers Excellent Gain Flatness, 50 MHz-3GHz Typical ±0.3 dB gain flatness across the entire frequency range minimizes the need for external equalizer networks making it a great fit for instrumentation and EW application. a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses. b. The WJ AH102 part number is used for identification and comparison purposes only. REV. B ECO-010399 PHA-102+ GY/RS/CP/AM 211027 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 6 ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier PHA-102+ ELECTRICAL SPECIFICATIONS AT 25°C, 50Ω, UNLESS NOTED Parameter Min. 50 13.1 14.6 Frequency Range Gain Gain flatness (±) Input Return Loss Output Return Loss Output Power @1dB compression Output IP3 (Pout = 0dBm/Tone) Noise Figure Device Operating Voltage VDD=9V1 Condition (MHz) Typ. 50 Vs=9V2 Max. Typ. 6000 50-6000 16.0 14.2 900 — 14.5 — 14.2 2000 12.7 14.1 15.5 13.8 2500 — 14.0 — 13.7 3000 12.5 14.0 15.3 13.8 6000 — 11.9 — Units MHz dB 10.9 50-3000 0.3 0.25 dB 50 14 12 dB 900 14 13 2000 12 13 2500 12 14 3000 12 15 6000 4 4 50 18 13 900 17 17 2000 15 15 2500 14 15 3000 14 15 6000 4 4 50 26.1 25.4 900 26.4 26.0 2000 26.5 26.1 2500 26.1 25.6 3000 25.6 25.0 6000 20.4 19.8 50 44.8 41.6 900 50.0 49.3 2000 43.0 42.5 2500 41.4 41.4 3000 40.3 40.4 6000 37.3 38.1 50 3.6 3.6 900 3.4 3.6 2000 3.7 3.8 2500 3.7 3.7 3000 4.0 4.0 6000 6.7 7.0 8.5 Device Operating Current dB dBm dBm dB 9 9.5 9 V 192 211 191 mA Device Current Variation vs. Temperature3 57.69 57.69 µA/°C Device Current Variation vs. Voltage4 0.026 0.026 mA/mV 20.4 20.4 °C/W Thermal Resistance Junction-To-Ground Lead at 85°C stage temperature 1. Measured on Mini-Circuits Characterization Test Board. See Characterization Test Circuit (Figure 1A, 1B & 1C). 2. Measured on Mini-Circuits Application Evaluation Board TB-PHA-102+. See Application Test Circuit (Figure 2). 3. Device Current Variation vs. Temperature= (Current at 85°C - Current at -45°C)/130°C 4. Device Current Variation vs. Voltage = (Current at 9.5V - Current at 8.5V) / ((9.5V-8.5V)*1000 mV/V) www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 2 OF 6 ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier PHA-102+ ABSOLUTE MAXIMUM RATINGS5 Parameter Ratings Operating temperature (ground lead) -40°C to 85°C Storage temperature -65°C to 150°C Power dissipation 3.18W Input power (CW) 22 dBm (continuous) 25 dBm (5 minutes max) DC voltage on Pin 3 11V 5. Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GND Function Pin Number Description RF-IN 1 RF input pin. RF-OUT and DC-IN 3 RF Output and DC Bias GND Paddle Connections to ground. CHARACTERIZATION TEST CIRCUIT FOR S-PARAMETER & NOISE FIGURE MEASUREMENT VDD Fig 1A. Block Diagram of Test Circuit used for S-Parameter and Noise Figure Measurement. (DUT is soldered on Mini-Circuits Characterization test board.) Gain, Return loss and noise figure are measured using Agilent’s N5242A PNA-X microwave network analyzer. Characterization TB RF-IN 1 BLK-18+ (or DC Block of PNA-X) DUT RF-OUT 3 2,4 & Paddle Conditions: 1. Gain and Return loss: Pin= -25dBm ZX85-12G-S+ (or Internal Bias Tee of PNA-X) www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 3 OF 6 ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier PHA-102+ CHARACTERIZATION TEST CIRCUIT FOR P1DB MEASUREMENT VDD Pre-Amp RF-IN Characterization TB Attenuator Attenuator 3dB 1 6dB PHA-102+ Broadband Application Circuit (9V, 195mA) DUT 3 RF-OUT 2,4 & Paddle BLK-18+ ZX85-12G-S+ (or Internal Bias Tee of PNA-X) Fig 1B. Block Diagram of Test Circuit used for P1dB Measurement. (DUT is soldered on Mini-Circuits Characterization test board.) Output power at1dB compression is measured using Agilent’s N5242A PNA-X microwave network analyzer. CHARACTERIZATION TEST CIRCUIT FOR IP3 MEASUREMENT 5V, 150mA Sig Gen #1 E8257D BLK-18+ PHA-1H+ ZX85-12G-S+ VDD Sig Gen #1 5V, 150mA Attenuator Attenuator Sig Gen #2 E8257D 10dB BLK-18+ PHA-1H+ ZX85-12G-S+ 6dB Characterization TB -16dB Coupling OUT 1 CPL IN Directional Coupler ZHDC-16-63-S+ BLK-18+ DUT Attenuator 3 2,4 & Paddle 20dB ZX85-12G-S+ MXA N9020A Fig 1C. Block Diagram of Test Circuit used for IP3 Measurement. (DUT is soldered on Mini-Circuits Characterization test board) P1dB is measured using two E8257D Signal Generators and one N9020A MXA Signal Analyzer. Condition: 1. Output IP3 (OIP3): Two Tones spaced 1 MHz apart, 8 dBm/ tone at output. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 4 OF 6 ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier PHA-102+ APPLICATION TEST CIRCUIT VDD TB-PHA-102+ C4 C3 L1 1 RF-IN DUT 3 C1 RF-OUT C2 2,4 & Paddle Fig 2. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Application test board TB-PHA-102+) Gain, Return loss, Output power at1dB compression (P1dB), output IP3 (OIP3) and noise figure are measured per Figure 1A, 1B & 1C, except DC block BLK-18+ and Bias-Tee ZX85-12G-S+(or Internal Bias-Tee of PNA-X) are not required. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two Tones spaced 1 MHz apart, 8 dBm/ tone at output. PRODUCT MARKING P102 Marking may contain other features or characters for internal lot control www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 5 OF 6 ULTRA HIGH DYNAMIC RANGE Monolithic Amplifier PHA-102+ ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS C LIC K HERE Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style DF782 (SOT 89) Plastic package, exposed paddle lead finish: matte-tin Tape & Reel Standard quantities available on reel F55 7” reels with 20, 50, 100, 200, 500 or 1K devices Suggested Layout for PCB Design PL-670 Evaluation Board TB-PHA-102+ Environmental Ratings ENV008T1 ESD RATING Human Body Model (HBM): Class 1A (250V) in accordance with ANSI/ESD STM 5.1 - 2001 MSL TEST FLOW CHART Start Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles 260°C Soak 85°C/85RH 168 hours Bake at 125°C, 24 hours Visual Inspection Electrical Test SAM Analysis Finish NOTES A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the standard. Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 6 OF 6