LOW NOISE, HIGH IP3
Monolithic Amplifier
50Ω
PMA-5451+
0.05 to 6 GHz
THE BIG DEAL
y Single Positive Supply Voltage, 3V, Id=30mA
y Ultra Low Noise Figure, 0.6 dB typ. at 0.5GHz
y High IP3, +29 dBm typ. 1GHz
y Gain, 19dB typ. at 1 GHz
y Output Power, up to +17dBm typ.
y Micro-miniature size, 3mm x 3mm
y Aqueous washable
Generic photo used for illustration purposes only
CASE STYLE: DQ849
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
APPLICATIONS
y Cellular
y ISM
y GSM
y WCDMA
y LTE
y WiMAX
y WLAN
y UNII and HIPERLAN
PRODUCT OVERVIEW
Mini-Circuits PMA-5451+ is a E-PHEMT* based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 6 GHz with a unique
combination of low noise and high IP3 making this amplifier ideal for sensitive receiver applications. This design operates on a
single +3V supply at only 30mA and is internally matched to 50 Ohms.
KEY FEATURES
Feature
Advantages
Ultra Low Noise,0.6 dB
Outstanding Noise Figure, measured in a 50 Ohm environment without any external matching
High IP3, +29 dBm
Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise
Receiver Front End (RFE) because it gives the user advantages at both ends of the dynamic range: sensitivity & two-tone spurfree dynamic range
Low Current, 30mA
At only 30mA, the PMA-5451+ is ideal for remote applications with limited available power or densely packed applications
where thermal management is critical.
Broad Band
Operating over a broadband the PMA-5451+ covers the primary wireless communications bands: Cellular, PCS, LTE, WiMAX
Internally Matched
No external matching elements required to achieve the advertised noise and output power over the full band
MCLP Package
Low Inductance, repeatable transitions, excellent thermal pad
Max Input Power, +20dBm
Ruggedized design operates up to input powers of +20dBm without the need of an external limiter
High Reliability
Low, small signal operating current of 30 mA nominal maintains junction temperatures typically below 100°C at 85°C ground
lead temperature
*Enhancement mode Pseudomorphic High Electron Mobility Transistor.
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
REV. E
ECO-013311
PMA-5451+
TH/RS/CP
210517
PAGE 1 OF 5
LOW NOISE, HIGH IP3
Monolithic Amplifier
PMA-5451+
ELECTRICAL SPECIFICATIONS(1) AT 25°C, ZO=50Ω, (REFER TO CHARACTERIZATION CIRCUIT, FIG. 1)
Parameter
Condition (GHz)
Frequency Range
Min.
0.05
DC Voltage (Vd)
20
DC Current (IRbias)
1.3
0.5
0.6
1.0
0.8
2.0
1.0
3.0
1.3
4.0
1.5
5.0
2.0
6.0
2.3
0.05
24.2
0.5
22.1
2.0
Gain
Input Return Loss
Output Return Loss
Output Power @ 1 dB compression (2)
4.0
8.5
5.0
6.7
6.0
5.3
0.05-0.5
8.8
0.5-6
6.5
0.05-0.1
14.0
0.1-6
19.0
0.05
27.3
0.5
27.9
1.0
29.0
2.0
30.8
3.0
31.4
4.0
30.8
5.0
31.8
6.0
32.2
(3)
Ratings
-40°C to 85°C
Storage Temperature
-55°C to 100°C
Channel Temperature
150°C
Power Dissipation
5V
500mW
DC Current (Pad 6)
80mA
Bias Current (Pad 7)
10mA
Input Power
(7)
13.7
10.6
MAXIMUM RATINGS(4)
DC Voltage
6.0
GHz
40
mA
V
+20dBm
mA
1.3
dB
18.6
12.3
3.0
Thermal Resistance
(Pad 6)
30
0.05
1.0
Operating Temperature (5)
Units
1.6
Noise Figure
Parameter
Max.
3.0
DC Current (Id) (6)
DC Current Variation vs. Temperature
Typ.
15.1
dB
dB
dB
dB
-0.030
mA/°C
128
°C/W
(1) Measured on Mini-Circuits Characterization test board TB-502+
See Characterization Test Circuit (Fig. 1)
(2) P1dB specified with external current limiting of 40mA;
Capable of higher P1dB at higher current (see Fig.2)
(3) (Current at 85°C - Current at -45°C)/130
(4) Permanent damage may occur if any of these limits are exceeded.
These maximum ratings are not intended for continuous normal operation.
(5) Defined with reference to ground pad temperature.
(6) Specified DC current consumption is under small signal conditions.
Current will increase with input RF Power. To maintain maximum current consumption,
external DC current limiting circuits are required on Vd line.
(7) Maximum input power is specified based upon external Vd current limiting of 60mA.
Maximum input power will degrade without external current limiting.
*Enhancement mode Pseudomorphic High Electron Mobility Transistor.
5.Permanent damage may occur if any of these limits are exceeded. Electrical maximum
ratings are not intended for continuous normal operation.
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 2 OF 5
LOW NOISE, HIGH IP3
Monolithic Amplifier
SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION
Function
Pad
Number
Description (See Figure 2)
RF-IN
1
RF input pad
RF-OUT
& DC
6
RF output pad (connected to RF-OUT
via blocking external cap C2, and
Supply voltage Vs via RF Choke L1)
BIAS
7
Bias pad (connected to Vs via Rbias)
GND
paddle in
center of
bottom
Connected to ground
NOT
USED
2,3,4,5,8
No internal connection; recommended
use: per PCB Layout PL-299
BIAS (7)
BIAS
PMA-5451+
NC (8)
RF-OUT
and DC
RF-IN
RF-IN (1)
RF-OUT & DC (6)
GND
NC (2)
NC (5)
NC (3)
NC (4)
CHARACTERIZATION TEST CIRCUIT
Vs (Supply voltage)
IRbias
I
d
Rbias
1.5KΩ
Fig 1. Block Diagram of Test Circuit used for characterization. (DUT
soldered on Mini-Circuits Characterization Test Board TB-502+) Gain,
Output power at 1dB compression (P1dB), Output IP3 (OIP3) and
Noise Figure measured using Agilent’s N5242A PNA-X Microwave
network analyzer.
I
ds
390nH
6
DUT
Bias-Tee
ZX85-12G-S+
Output Power (dBm)
25
20
15
10
TB-502+
+3V
RF-OUT
Vd
Bias-Tee
ZX85-12G-S+
Output Power and Id vs. Input Power
Id Current Limited: 40mA and 60mA
Frequency=2 GHz
Output Power at 1dB Compression vs. Frequency
Id Current Limited: 40mA and 60mA
80
70
5
60
0
50
-5
40
-10
-25.0
-17.8
-10.6
-3.4
Input Power (dBm)
21.0
100
90
P Out Cur.Lim=40mA
P Out Cur.Lim=60mA
Id Cur.Lim=40mA
Id Cur.Lim=60mA
3.8
30
11.0
P1dB (dBm)
7
Id (mA)
1
RF-IN
Conditions:
1. Gain: Pin=-25 dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 5 dBm/tone
at output.
3. Vs adjusted for 3V at device (Vd), compensating loss of bias tee.
20.5
Current Limit_40mA
20.0
Current Limit_60mA
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
0
1000
2000
3000
4000
Frequency (MHz)
5000
6000
7000
Fig 2. Output Power and Id vs. Input Power and Frequency.
Performance measured on Mini-Circuits Characterization test board TB-502+. See Characterization Test Circuit (Fig. 1)
Measurements performed with current (Id) limited as noted.
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 3 OF 5
LOW NOISE, HIGH IP3
Monolithic Amplifier
PMA-5451+
RECOMMENDED APPLICATION CIRCUIT
(refer to evaluation board for PCB Layout and component values)
I
I
RF-IN
7
1
ds
+3V (Vs)
Fig 3. Recommended Application Circuit
Note: Resistance of L1, 0.1-0.2Ω typically
C3
Rbias
1.5KΩ
L2
C1
I
Rbias
d
L1
C2
6
RF-OUT
Paddle
Typical Current (Id) as a function of Rbias
(Vd = 3V)
90
Fig 4. Id varies as a function of Rbias. The Id current
range is defined based upon the specific Rbias value
noted in the Application Circuit (Fig 3). Rbias may be
adjusted to optimize Id for a customers’ application.
RF performance will vary accordingly.
80
70
Id (mA)
60
50
40
30
20
10
0
0.25K
0.50K
0.75K
1.00K
1.25K
1.50K
Rbias (Ohms)
PRODUCT MARKING
MCL
545
black body
model family designation
Marking may contain other features or characters for internal lot control
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 4 OF 5
LOW NOISE, HIGH IP3
Monolithic Amplifier
PMA-5451+
ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS
Performance Data
Graphs, s-parameter data set (.zip file)
Case Style
DQ849 Plastic package, exposed paddle, lead finish: matte-tin
Tape & Reel
F104
Standard quantities available on reel
7” reels with 20, 50, 100, 200, 500, 1K or 2K devices
Suggested Layout for PCB Design
PL- 299
Evaluation Board
TB-501-1+ (50-5000 MHz)
Environmental Ratings
ENV08T1
C LIC K HERE
ESD RATING
Human Body Model (HBM): Class 1A (250 to
