PMA-545G1+

LOW NOISE, HIGH IP3 Monolithic Amplifier 50Ω PMA-545G1+ 0.4 to 2.2 GHz THE BIG DEAL y High Gain, 31.5 dB typ. at 0.9 GHz y Ultra Low Noise Figure, 0.9 dB typ. at 0.9 GHz y High IP3, 34 dBm typ. at 0.9 GHz y Output Power, up to +22dBm typ. at 0.9 GHz y Single Positive Supply Voltage, 5V y Micro-miniature size - 3mm x 3mm y Aqueous washable y Protected by U.S. patent no. 8,803,612 Generic photo used for illustration purposes only CASE STYLE: DQ849 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications LTE Performance APPLICATIONS y Cellular y ISM y GSM y WCDMA y LTE y GPS PRODUCT OVERVIEW Mini-Circuits PMA-545G1+ is a E-PHEMT* based Low Noise MMIC Amplifier operating from 0.4 to 2.2 GHz with a unique combination of low noise and high IP3 making this amplifier ideal for sensitive receiver applications. This design operates on a single +5V supply and is internally matched to 50 Ohms. KEY FEATURES Feature Advantages High Gain 26-33 dB Incorporating multiple stages of amplification, the PMA-545G1+ provides high gain reducing cost and PCB board space. Ultra Low Noise: 0.9 dB NF at 0.9 GHz Excellent Noise Figure, measured in a 50 Ohm environment – without any external matching. When combined with high gain of this design, it suppresses second stage NF contribution. High IP3:+34 dBm IP3 at 0.9 GHz Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise Receiver Front End (RFE) giving the user advantages at both ends of the dynamic range: sensitivity & two-tone IM dynamic range Output Power: +22 dBm at 0.9 GHz The PMA-545G1+ maintains consistent output power capability over the full operating temperature range making it ideal to be used in remote applications such as LNB’s as the L Band driver stage Internally Matched No external matching elements required to achieve the advertized noise and output power over the full band MCLP Package Low Inductance, repeatable transitions, excellent thermal pad Max Input Power +25 dBm Ruggedized design operates up to input powers often seen at Receiver inputs. High Reliability Low, small signal operating current of 160 mA nominal maintains junction temperatures typically below 130°C at 85°C ground lead temperature *Enhancement mode Pseudomorphic High Electron Mobility Transistor. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com REV. B ECO-010881 PMA-545G1+ TH/RS/CP/AM 211201 PAGE 1 OF 4 LOW NOISE, HIGH IP3 Monolithic Amplifier PMA-545G1+ ELECTRICAL SPECIFICATIONS(1) AT 25°C, VD=5V, ZO=50Ω, (REFER TO CHARACTERIZATION CIRCUIT) Parameter Condition (GHz) Min. Frequency Range 0.4 DC Voltage (Vd) 4.8 Typ. Input Return Loss Output Return Loss Output IP3 5.2 V 186 mA 0.4 1.2 — 0.9 0.9 — 1.2 1.0 1.4 1.6 1.0 — 1.2 — 0.4 — 32.9 — 0.9 — 31.5 — 1.2 28.1 31.3 34.5 1.6 — 30.2 — 2.2 — 26.1 — 0.4 9.5 0.9 11.6 1.2 11.9 1.6 14.6 2.2 19.9 0.4 21.3 0.9 17.5 1.2 16.1 1.6 15.1 2.2 14.2 0.4 31.7 0.9 33.4 1.2 33.6 1.6 33.8 2.2 Output Power @ 1 dB compression (2) GHz 5.0 2.2 Gain Units 2.2 158 DC Current Noise Figure Max. dB dB dB dB dBm 33.6 0.4 — 20.5 0.9 — 21.9 1.2 20.0 22.2 1.6 — 22.4 2.2 — dBm 22.6 DC Current Variation vs. Temperature (3) -0.156 mA/°C DC Current Variation vs. Voltage 0.027 mA/mV 48 °C/W Thermal Resistance DC Current Histogram DC CURRENT HISTOGRAM MAXIMUM RATINGS(4) Parameter Operating Temperature (5) Ratings 45 40 -40°C to 85°C 35 Storage Temperature -65°C to 150°C 30 Channel Temperature 150°C DC Voltage (Pad 4,5,7) 6V Power Dissipation 1.35W Input Power 25dBm 20 15 10 5 0 >190 185-190 180-185 175-180 170-175 165-170 160-165 155-160 150-155 145-150 140-145 135-140 130-135 125-130 120-125