PMA2-162LN+

PMA2-162LN+

  • 厂商:

    MINI

  • 封装:

    TFDFN8_EP

  • 描述:

    超低噪声、高IP3单片放大器

  • 数据手册
  • 价格&库存
PMA2-162LN+ 数据手册
ULTRA LOW NOISE, HIGH IP3 Monolithic Amplifier 50Ω PMA2-162LN+ 0.7 to 1.6 GHz THE BIG DEAL y Ultra Low Noise Figure, 0.5 dB at 1 GHz y High IP3, 30 dBm typ. at 1 GHz y Class 1B HBM ESD (500V) y Adjustable gain, 19.7-23.5 dB at 1 GHz y High Pout, P1dB 20 dBm typ. at 1 GHz y May be used as a replacement for MGA-631P8 a,b Generic photo used for illustration purposes only CASE STYLE: MC1631 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS y Base station infrastructure y Portable Wireless y LTE y GPS y GSM y Airborne radar PRODUCT OVERVIEW Mini-Circuits PMA2-162LN+ is a E-PHEMT* based Ultra-Low Noise MMIC Amplifier with a unique combinations of low noise and high IP3 making this amplifier ideal for sensitive high dynamic range receiver applications. This design operates on a single 4V supply. KEY FEATURES Feature Advantages Ultra Low Noise, 0.5 dB at 1.0 GHz Outstanding world class noise figure performance. High IP3, +30 dBm at 1.0 GHz Combining Low Noise and High IP3 makes this MMIC amplifier ideal for use in Low Noise Receiver Front End (RFE) as it gives the user advantages at both ends of the dynamic range: sensitivity & two-tone IM performance. Adjustable Gain By changing feedback resistor R1, gain can be changed from19.7 to 23.5 dB at 1GHz 2mm x 2mm 8 lead MCLP Package Low Inductance, repeatable transitions, excellent thermal contact to PCB Max Input Power, +25 dBm Ruggedized design operates up to high input powers often seen at Receiver inputs eliminating the need for an external resistor. High Reliability Low, small signal operating current of 55 mA nominal maintains junction temperatures typically below 100°C at 85°C ground lead temperature. Class 1B ESD (500V HBM) The PMA2-162LN+ is a super low noise PHEMT based design. Mini-Circuits incorporates ESD protection on die to achieve industry leading ESD performance for a low noise amplifier. A. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses. B. The Avago MGA-631P8 part number is used for identification and comparison purposes only. *Enhancement mode Pseudomorphic High Electron Mobility Transistor REV. E ECO-011027 PMA2-162LN+ TH/RS/CP/AM 211213 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 5 ULTRA LOW NOISE, HIGH IP3 Monolithic Amplifier PMA2-162LN+ ELECTRICAL SPECIFICATIONS1,2 AT 25°C AND 4V, UNLESS NOTED OTHERWISE Condition (GHz) Parameter Frequency Range R1=267Ω1 Min. R1=93Ω2 Typ. Max. Min. 1.6 0.7 0.7 Noise Figure Gain Input Return Loss Output Return Loss 3 Output Power @1 dB compression Output IP3 Typ. 0.55 0.57 0.8 0.51 0.54 1.0 0.47 0.48 1.3 0.64 0.65 1.6 0.80 — 24.4 — — 22.7 0.8 — 24.1 — — 22.2 1.0 20.9 22.7 24.5 18.6 20.8 1.3 — 20.7 — — 19.1 1.6 — 18.8 — — 17.7 0.7 9.5 11.5 0.8 15.5 18.8 1.0 17.9 20.0 1.3 12.4 14.5 1.6 10.8 12.4 0.7 13.6 21.6 0.8 16.1 17.8 1.0 18.9 16.0 1.3 15.6 15.1 1.6 10.7 11.6 0.7 19.5 18.3 0.8 19.8 18.9 1.0 19.9 19.7 1.3 19.7 19.8 1.6 18.8 19.0 0.7 29.1 28.3 0.8 30.3 29.5 1.0 30.0 29.0 1.3 30.1 29.2 29.4 3.8 Device Operating Current at 4V dB 0.81 0.7 1.6 GHz 1.6 0.7 Device Operating Voltage Units Max. dB 23.1 dB dB dBm dBm 28.5 4.0 4.2 55 60 3.8 4.0 4.2 V 55 60 mA 2 2 µA/°C Device Current Variation vs Voltage at 25°C 0.016 0.016 mA/mV Thermal Resistance, junction-to-ground lead 53 53 °C/W Device Current Variation vs. Temperature at 4V4 1. Measured on Mini-Circuits Characterization test board TB-615+. See Characterization Test Circuit (Fig. 1) R1=267Ω 2. Measured on Mini-Circuits Characterization test board TB-615+. See Characterization Test Circuit (Fig. 1) R1=93Ω 3. Current increases at P1dB 4. (Current at 85°C ­- Current at -45°C)/130 DC Current Histogram at Vs=4V MAXIMUM RATINGS Parameter Operating Temperature (ground lead) DC CURRENT HISTOGRAM Ratings -40°C to 85°C Storage Temperature -65°C to 150°C Junction Temperature 150°C Total Power Dissipation 0.55 W Input Power (CW), Vd=4V 25 dBm DC Voltage 5.5V 60 50 40 30 20 10 0 62-64 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com 60-62 Current (mA) 58-60 56-58 54-56 52-54 50-52 Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. 70 PAGE 2 OF 5 ULTRA LOW NOISE, HIGH IP3 Monolithic Amplifier PMA2-162LN+ SIMPLIFIED SCHEMATIC & PAD CONNECTIONS Bias Feedback GROUND NC 4 5 RF-IN RF- OUT RF-IN RF-Out and DC-IN 7 8, paddle 2 PADDLE NC RF GROUND 3 Ground RF Ground FEEDBACK BIAS TOP VIEW Function Pad Number Description RF IN 2 Connects to RF input via C1 and Pad 3 via L1 RF-OUT & DC-IN 7 Connects to RF out via C2, Pad 5 via R1, and C3 RF-Ground 3 Connects to ground via C4 and Pad 2 via L1 Bias 4 Connects to Supply voltage (Vs) via Rbias Feedback 5 Connected to pads 7, 4 via R1 and C3 No Connection 1,6 Ground 8 & paddle Not used internally. Pin 1 Connected to ground on test board Connects to ground RECOMMENDED APPLICATION AND CHARACTERIZATION TEST CIRCUIT C5 L2 Rbias C3 C1 4 2 RF-IN L1 3 TB-615+ 7 Fig 1. Application and Characterization circuit Note: This block diagram is used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-615+) Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. R1 5 DUT C6 C7 Vs (Supply Voltage) C2 RF-OUT 1,8, Paddle C4 Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. Components Size C1, C6 C2, C4 Value Manufacturer P/N 0402 9.1pF AVX CORP 04025U9R1CAT2A 0402 100pF Murata GRM1555C1H101JA01D C3 0402 5.6pF Murata GJM1555C1H5R6BB01D C5, C7 0402 0.1uF Murata GRM155R71C104KA88D R1 0402 267 Ohm KOA Speer Electronics RK73H1ETTP2670F RK73H1ETTP7500F Rbias 0402 750 Ohm KOA Speer Electronics L1 0402 6.8nH Coilcraft, Inc. 0402CS-6N8XGLW L2 0402 15nH Coilcraft, Inc. 0402CS-15NXGLW PRODUCT MARKING black body index over pin 1 PMA2 162L model family designation Marking may contain other features or characters for internal lot control www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 3 OF 5 ULTRA LOW NOISE, HIGH IP3 Monolithic Amplifier PMA2-162LN+ ADJUSTABLE GAIN PERFORMANCE (VS. R1) NOISE FIGURE (dB) Vs. Freqency and R1 Values S21 (AMPLITUDE,dB) Vs. Freqency and R1 Values 1 R1=57.6_Ohm R1=93.1_Ohm R1=267_Ohm R1=562_Ohm S21 (AMPLITUDE) (dB) 25 23 0.9 0.8 NOISE FIGURE (dB) 27 0.7 0.6 0.5 21 0.4 19 0.2 17 0.1 15 700 900 1100 RF(MHz) 1300 0 700 1500 S22 (AMPLITUDE,dB) Vs. Freqency and R1 Values 900 1100 RF(MHz) 1300 1500 S11 (AMPLITUDE,dB) Vs. Freqency and R1 Values 0 0 -5 S11 (AMPLITUDE) (dB) S22 (AMPLITUDE) (dB) R1=57.6_Ohm R1=93.1_Ohm R1=267_Ohm R1=562_Ohm 0.3 -5 -10 -10 -15 -15 -20 R1=57.6_Ohm R1=93.1_Ohm R1=267_Ohm R1=562_Ohm -25 -30 -35 700 900 1100 RF(MHz) 1300 1500 -20 R1=57.6_Ohm R1=93.1_Ohm R1=267_Ohm R1=562_Ohm -25 -30 -35 700 900 1100 RF(MHz) 1300 1500 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 4 OF 5 ULTRA LOW NOISE, HIGH IP3 Monolithic Amplifier PMA2-162LN+ ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS C LIC K HERE Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style MC1631 Plastic package, exposed paddle, lead finish: matte tin Tape & Reel F108 Standard quantities available on reel 7” reels with 20, 50, 100, 200, 500,1K, 2K or 3K devices Suggested Layout for PCB Design PL-344 Evaluation Board TB-615+ Environmental Ratings ENV08T1 ESD RATING Human Body Model (HBM): Class 1B (500 to
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