MMIC SURFACE MOUNT
Low Noise Amplifier
50Ω
24 to 32 GHz
PMA3-24323LN+
High Dynamic Range
THE BIG DEAL
y Wideband, 24 to 32 GHz
y Low Noise Figure, Typ. 3.1 dB
y High OIP3, Typ. +25 dBm
y High P1dB, Typ. +17 dBm
y Single +5 V positive supply voltage
y 3x3mm, 12-Lead QFN Style Package
Generic photo used for illustration purposes only
APPLICATIONS
y Satellite Communications
y Test & Measurement Equipment
y 5G mmWave and Back Haul Radio Systems
y Radar, EW, and ECM Defense Systems
VDD1
NC
VDD2
FUNCTIONAL DIAGRAM
12
11
10
GND
1
9
GND
RF-IN
2
8
RF-OUT
GND
3
7
GND
4
5
6
VDD3
NC
VDD4
PRODUCT OVERVIEW
The PMA3-24323LN+ is a pHEMT based wideband, low noise MMIC amplifier with a unique combination of high dynamic
range and low noise figure over a very broad bandwidth making it ideal for use in a wide variety of transmitter and receiver
applications. This amplifier offers market competitive performance focused on Ka-band satellite communications applications
as a 50Ω matched amplifier requiring no external matching. The PMA3-24323LN+ is ideal as a 2nd stage amplifier without
degrading overall system noise floor on the receive side, or as a low noise pre-driver or driver on the transmit side. This design
operates on a single 5V positive supply and comes in a small plastic package (3 x 3 x 0.89mm), accommodating dense circuit
board layouts.
KEY FEATURES
Feature
Advantages
Low Noise Figure, Typ. 3.1 dB
Enables lower system noise figure performance.
High Dynamic Range.
y OIP3, Typ. +25 dBm
y P1dB, Typ. +17 dBm
Offers low noise figure with correspondingly high P1dB and OIP3 enables flexibility to achieve high Dynamic range
system performance
3x3mm 12-lead QFN Style Package
Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent
thermal contact to the PCB.
REV. A
ECO-017250
PMA3-24323LN+
MCL NY
230327
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PAGE 1 OF 9
MMIC SURFACE MOUNT
Low Noise Amplifier
50Ω
24 to 32 GHz
PMA3-24323LN+
High Dynamic Range
ELECTRICAL SPECIFICATIONS1 AT 25°C, AND VS= +5V, UNLESS NOTED OTHERWISE
Parameter
Condition (GHz)
Frequency Range
Min.
Typ.
24
Gain
Output Power at 1 dB Compression (P1dB)
Output Third-Order Intercept (POUT = -5 dBm/Tone)
Input Return Loss
Output Return Loss
Isolation
Noise Figure
Device Operating Voltage (VS)
2
Device Operating Current (Is)
DC Current Variation vs. Temperature3
DC Current Variation vs. Voltage4
24
14.7
16.1
28
15.1
16.6
32
14.5
16.4
24
+15.2
28
+16.8
32
+16.8
24
+25
28
+24
32
+25
24
9
28
14
32
9
24
9
28
11
32
13
24-32
40
24
2.6
28
2.8
32
3.8
+4.75
+5
Max.
Units
32
GHz
dB
dBm
dBm
dB
dB
dB
dB
+5.25
V
128
mA
-19.23
µA/°C
0.03
mA/mV
1. Tested in Mini-Circuits Characterization Test/Evaluation Board TBPMA324323LNC+. See Figure 2. Board loss de-embedded to the device.
2. Current at PIN= -25 dBm. Increases to 139 mA at P1dB.
3. ((Current at +85°C - Current at -45°C)) / (+130°C)
4. (Current at +5.25V in mA)- (Current at +4.75V mA) / ((+5.25V – +4.75V)*1000mA/mV)
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 2 OF 9
MMIC SURFACE MOUNT
Low Noise Amplifier
50Ω
24 to 32 GHz
MMIC Amplifier
Typical Performance Curves
High Dynamic Range
+25°C
+4.75V
+5.00V
22
+85°C
19
GAIN (dB)
GAIN (dB)
GAIN vs. DEVICE VOLTAGE,
PIN = -25 dBm, TEMPERATURE = +25°C
25
-45°C
22
16
+5.25V
19
16
13
13
10
PMA3-24323LN+
TYPICAL PERFORMANCE GRAPHS
GAIN vs. TEMPERATURE,
PIN = -25 dBm, VS = +5 V
25
PMA3-24323LN+
24
25
26
27
28
29
30
31
10
32
24
25
26
INPUT RETURN LOSS vs.TEMPERATURE,
PIN = -25 dBm, VS = +5 V
+25°C
-8
+85°C
-10
-12
-14
-16
24
25
26
27
28
29
30
31
OUTPUT RETURN LOSS (dB)
OUTPUT RETURN LOSS (dB)
+25°C
+85°C
-8
-9
-10
-11
-12
-13
26
27
28
29
FREQUENCY (GHz)
32
+5.25V
-10
-12
-14
24
25
26
27
28
29
30
31
32
30
31
OUTPUT RETURN LOSS vs. DEVICE VOLTAGE,
PIN = -25 dBm, TEMPERATURE = +25°C
-6
-45°C
25
31
+5.00V
-8
-16
32
OUTPUT RETURN LOSS vs. TEMPERATURE,
PIN = -25 dBm, VS = +5 V
24
30
FREQUENCY (GHz)
-7
-14
29
+4.75V
FREQUENCY (GHz)
-6
28
INPUT RETURN LOSS vs. DEVICE VOLTAGE,
PIN = -25 dBm, TEMPERATURE = +25°C
-6
-45°C
INPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
-6
27
FREQUENCY (GHz)
FREQUENCY (GHz)
32
+4.75V
-7
+5.00V
+5.25V
-8
-9
-10
-11
-12
-13
-14
24
25
26
27
28
29
30
31
32
FREQUENCY (GHz)
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PAGE 3 OF 9
MMIC SURFACE MOUNT
Low Noise Amplifier
50Ω
24 to 32 GHz
MMIC Amplifier
Typical Performance Curves
High Dynamic Range
+25°C
+4.75V
+5.00V
-45
+85°C
ISOLATION (dB)
ISOLATION (dB)
ISOLATION vs. DEVICE VOLTAGE,
PIN = -25 dBm, TEMPERATURE = +25°C
-40
-45°C
-45
-50
-55
-60
-65
-70
PMA3-24323LN+
TYPICAL PERFORMANCE GRAPHS
ISOLATION vs.TEMPERATURE,
PIN = -25 dBm, VS = +5 V
-40
PMA3-24323LN+
+5.25V
-50
-55
-60
-65
24
25
26
27
28
29
30
31
-70
32
24
25
26
FREQUENCY (GHz)
P1dB vs. TEMPERATURE,
VS = +5 V
22
+25°C
P1dB (dBm)
P1dB (dBm)
30
31
32
+4.75V
+5.00V
20
+85°C
16
+5.25V
18
16
14
14
24
25
26
27
28
29
30
31
12
32
24
25
26
OUTPUT IP3 vs. TEMPERATURE,
POUT = -5 dBm/TONE, VS = +5 V
35
+25°C
32
OUTPUT IP3 (dBm)
29
26
23
26
27
28
29
FREQUENCY (GHz)
29
30
31
32
30
31
+4.75V
+5.00V
32
+85°C
25
28
OUTPUT IP3 vs. DEVICE VOLTAGE,
POUT = -5 dBm/TONE, TEMPERATURE = +25°C
35
-45°C
24
27
FREQUENCY (GHz)
FREQUENCY (GHz)
OUTPUT IP3 (dBm)
29
P1dB vs. DEVICE VOLTAGE,
TEMPERATURE = +25°C
22
18
20
28
-45°C
20
12
27
FREQUENCY (GHz)
32
+5.25V
29
26
23
20
24
25
26
27
28
29
30
31
32
FREQUENCY (GHz)
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PAGE 4 OF 9
MMIC SURFACE MOUNT
Low Noise Amplifier
50Ω
24 to 32 GHz
MMIC Amplifier
Typical Performance Curves
3
2
25
26
27
28
29
30
31
+4.75V
+5.00V
5
4
24
NOISE FIGURE vs. DEVICE VOLTAGE,
TEMPERATURE = +25°C
6
NOISE FIGURE (dB)
5
1
PMA3-24323LN+
TYPICAL PERFORMANCE GRAPHS
-45°C
+25°C
+85°C
4
3
2
1
32
+5.25V
24
25
26
FREQUENCY (GHz)
27
28
29
30
31
32
FREQUENCY (GHz)
GAIN VARIATION vs. TEMPERATURE,
PIN = -25 dBm, VS = +5 V
0.010
GAIN VARIATION (dB/°C)
NOISE FIGURE (dB)
High Dynamic Range
NOISE FIGURE vs. TEMPERATURE,
VS = +5 V
6
PMA3-24323LN+
-45°C to +85°C
0.000
-0.010
-0.020
-0.030
24
25
26
27
28
29
30
31
32
FREQUENCY (GHz)
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PAGE 5 OF 9
MMIC SURFACE MOUNT
Low Noise Amplifier
50Ω
24 to 32 GHz
PMA3-24323LN+
High Dynamic Range
5
ABSOLUTE MAXIMUM RATINGS
Parameter
Ratings
Operating Temperature
-45 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature6
+150 °C
Total Power Dissipation
1.62 W
Input Power (CW), VS = +5V
+23 dBm
DC Voltage at VDD1, VDD2, VDD3, VDD4
+10 V
5. Permanent damage may occur if any of these limits are exceeded. Maximum ratings are not intended for
continuous normal operation.
6. Peak temperature on top of Die.
THERMAL RESISTANCE
Parameter
Ratings
Thermal Resistance (Θjc)7
32.2ºC/W
7. Θjc= (Hot Spot Temperature on Die - Temperature at Ground Lead)/Dissipated Power
ESD RATING
Human Body Model
(HBM)
Class
Voltage Range
Reference Standard
1A
250V to