PMA3-83LN+

Low Noise, Wideband, High IP3 Monolithic Amplifier 50Ω PMA3-83LN+ 0.5 to 8.0 GHz The Big Deal • Flat gain over wideband • Low noise figure, 1.3 dB • High IP3, up to +35 dBm CASE STYLE: DQ1225 Product Overview The PMA3-83LN+ is a PHEMT based wideband, low noise MMIC amplifier with a unique combination of low noise, high IP3, and flat gain over wideband making it ideal for sensitive, high-dynamic-range receiver applications. This design operates on a single 5V or 6V supply, is well matched for 50Ω and comes in a tiny, low profile package (3 x 3 x 0.89mm), accommodating dense circuit board layouts. Key Features Feature Advantages Low noise, 1.3 dB at 2 GHz Enables lower system noise figure performance. High IP3 • +35 dBm at 2 GHz • +28.5 dBm at 8 GHz Combination of low noise and high IP3 makes this MMIC amplifier ideal for use in low noise receiver front end (RFE) as it gives the user advantages of sensitivity and twotone IM performance at both ends of the dynamic range. Low operating voltage, 5V/6V. Achieves high IP3 using low voltage. 3 x 3mm 12-lead MCLP package Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact to the PCB. Wide bandwidth with flat gain • ±0.9 dB over 0.5 to 7 GHz • ±1.5 dB over 0.5 to 8 GHz Enables a single amplifier to be used in many wideband applications including defense, instrumentation and more. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 1 of 5 Low Noise, Wideband, High IP3 Monolithic Amplifier 50Ω PMA3-83LN+ 0.5 to 8.0 GHz Product Features • Low Noise figure, 1.3 dB at 2 GHz • High IP3, 35 dBm typ. at 2 GHz • High Pout, P1dB 20.7 dBm typ. at 2 GHz and 6V • Excellent Gain flatness, ±0.9 dB over 0.5 to 7 GHz and 6V Generic photo used for illustration purposes only CASE STYLE: DQ1225 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Typical Applications • WiFi • WLAN • UMTS • LTE • WiMAX • S-band Radar • C-band Satcom General Description The PMA3-83LN+ is a PHEMT based wideband, low noise MMIC amplifier with a unique combination of low noise, high IP3, and flat gain over wideband making it ideal for sensitive, high-dynamic-range receiver applications. This design operates on a single 5V or 6V supply, is well matched for 50Ω and comes in a tiny, low profile package (3 x 3 x 0.89mm), accommodating dense circuit board layouts. simplified schematic & pad description Function Pad Number Description (See Figure 1) RF-IN 2 Connects to RF input and to ground via L1 (optional blocking capacitor of 100pF may be used) RF-OUT & DC-IN 8 Connects to RF out via C3 and VDD via L2 Ground Paddle No Connection 1,3 to 7, 9 to 12 Connects to ground Not used internally. Connected to ground on test board (except 11 and 12) Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com REV. B M156196 PMA3-83LN+ RS/CP 191031 Page 2 of 5 PMA3-83LN+ Monolithic E-PHEMT MMIC Amplifier Electrical Specifications1 at 25°C and 5V, unless noted Parameter Condition (GHz) VDD=6.0 Min. Frequency Range Typ. 0.5 Noise Figure Gain Input Return Loss Output Return Loss Output Power at 1dB Compression2 Output IP3 VDD=5.0 Max. Min. 8.0 0.5 Typ. Units Max. 8.0 GHz dB 0.5 — 1.8 — — 1.9 — 2.0 — 1.3 1.7 — 1.3 — 4.0 — 1.5 — — 1.5 — 5.0 — 1.5 — — 1.6 1.9 8.0 — 2.2 — — 2.2 — 0.5 — 21.8 — — 21.0 — 2.0 19.9 22.1 24.3 — 21.3 — 4.0 — 21.5 — — 20.8 — 5.0 — 21.2 — 18.7 20.5 — 8.0 — 19.2 — — 18.7 — 0.5 14.2 13.1 2.0 16.0 16.0 4.0 13.0 12.2 5.0 12.5 12.4 8.0 6.3 6.3 0.5 12.9 13.7 2.0 13.0 14.3 4.0 28.8 27.5 5.0 20.3 18.4 8.0 12.9 12.6 0.5 18.6 16.3 2.0 20.7 19.1 4.0 19.6 5.0 20.3 8.0 18.0 17.3 0.5 34.2 29.7 2.0 35.2 30.0 4.0 34.0 5.0 34.0 8.0 28.5 Device Operating Voltage (VDD) 6.0 Device Operating Current (IDD) 77 dB dB dB dBm 17.6 17.2 18.9 — dBm 29.6 24.0 29.7 — 26.2 94 5.0 V 60 mA Device Current Variation vs. Temperature3 -152 -109 µA/°C Device Current Variation vs. Voltage 0.016 0.016 mA/mV 47 47 °C/W Thermal Resistance, junction-to-ground 1. Measured on Mini-Circuits Characterization test board TB-830A+. See Characterization Test Circuit (Fig. 1) 2. Current increases at P1dB to 109 mA typ. at +6V VDD and 88mA typ. at +5V VDD 3. (Current at 85°C -­ Current at -45°C)/130 Absolute Maximum Ratings4 Parameter Ratings Operating Temperature (ground lead) -40°C to 105°C Storage Temperature -65°C to 150°C Junction Temperature 150°C Total Power Dissipation 0.95 W Input Power (CW), Vd=5,6V5 +19 dBm (5 minutes max.) +16 dBm (continuous) DC Voltage 7V Notes A. Performance and quality attributes and conditions notofexpressly stated this specification document are intended to be excluded and do not form a part of this specification document. 4. Permanent damage may occur if any these limits areinexceeded. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. Electrical maximum ratings are notare intended operation. C. The parts covered by this specification document subjectfor to continuous Mini-Circuitsnormal standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled on Mini-Circuits test board, TB-830A+ to the rights5. Measured and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 3 of 5 PMA3-83LN+ Monolithic E-PHEMT MMIC Amplifier Recommended Application and Characterization Test Circuit 0 Component Vendor Vendor P/N Value Size C1 Murata GRM155R71E103KA01D 0.01µF 0402 C2 Murata GJM1555C1H100JB01D 10pF 0402 C3 Murata GRM1555C1H101JA01D 100pF 0402 L1 Murata LQG15HS18NJ02D 18nH 0402 L2 Coilcraft 0402CS-39NXGLW 39nH 0402 Fig 1. Application and Characterization Circuit Note: This block diagram is used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-830A+) Gain, Return loss, Output power at 1dB compression (P1 dB), output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. Product Marking black body index over pin 1 83LN model family designation Marking may contain other features or characters for internal lot control Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 4 of 5 PMA3-83LN+ Monolithic E-PHEMT MMIC Amplifier Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style DQ1225 Plastic package, exposed paddle, lead finish: Matte-Tin Tape & Reel F66 Standard quantities available on reel 7” reels with 20, 50, 100, 200, 500,1K or 2K devices Suggested Layout for PCB Design PL-456 Evaluation Board TB-830A+ Environmental Ratings ENV08T1 ESD Rating Human Body Model (HBM): Class 1A (250 to