MMIC SURFACE MOUNT
Power Amplifier
50 Ω
0.01 to 10 GHz
PMA5-83-2W+
2 W PSAT
THE BIG DEAL
y P1dB, Typ. +31 dBm
y PSAT, Typ. +33 dBm
y Low Noise Figure, Typ. 3.5 dB
y High OIP3, Typ. +43.5 dBm
y Supply Voltage +12 V, 400 mA
y 5x5 mm 32-Lead QFN-Style Package
Generic photo used for illustration purposes only
APPLICATIONS
y Test and Measurement Equipment
y Radar, EW, and ECM Defense Systems
y 5G Sub6, MIMO Wireless Infrastructure Systems
y Microwave Radio & VSAT
NC
NC
NC
NC
31
DTC 1
NC
32
DTC 2
NC
FUNCTIONAL DIAGRAM
30
29
28
27
26
25
NC 1
24 NC
VG2 2
23 NC
NC 3
22 NC
NC 4
21 RF-OUT + VDD
RF-IN 5
20 NC
NC 6
19 NC
NC 7
18 NC
NC 8
10
11
12
13
14
15
16
NC
NC
NC
NC
VG1
NC
GTC1
GTC2
17 NC
9
PRODUCT OVERVIEW
The PMA5-83-2W+ is a GaAs MMIC Distributed Power Amplifier operating from 0.01 to 10 GHz. The amplifier provides 12
dB of gain, +33 dBm saturated output power, and achieves +43.5 dBm output IP3, while operating from a +12 V power supply
and consuming 400 mA of current. In addition, it is internally matched to 50 Ohms and comes in a 5x5 mm 32-Lead QFN-Style
package. These characteristics make it ideally suited for wideband test instrumentation and defense systems that require high
operating output power, while maintaining very low distortion characteristics.
KEY FEATURES
Feature
Advantages
High P1dB
Typ. +31 dBm
Flat gain and output power make this device excellent for wideband systems from 0.01 to 10 GHz that require at least
1W of operating output power over the full band.
Low Noise Figure
Typ. 3.5 dB
High operating output power accompanied with low noise figure enables a significant signal to noise ratio advantage
for systems requiring high dynamic range.
High OIP3
Typ. +43.5 dBm
High operating OIP3 and low 2nd and 3rd harmonic response provides for very low in-band distortion products,
which is typically needed for high fidelity measurement systems.
5x5 mm 32-Lead QFN-Style Package
Small footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent
thermal contact to the PCB. Industry standard packaging allows for ease of assembly in high volume manufacturing
processes.
REV. C
ECO-022156
PMA5-83-2W+
MCL NY
240624
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PAGE 1 OF 13
MMIC SURFACE MOUNT
Power Amplifier
50 Ω
0.01 to 10 GHz
PMA5-83-2W+
2 W PSAT
ELECTRICAL SPECIFICATIONS1 AT 25°C, VDD= +12 V, UNLESS NOTED OTHERWISE
Parameter
Condition (GHz)
Frequency Range
Gain
Output Power at 1 dB Compression (P1dB)
Output Power at Saturation (PSAT)2
Output Third-Order Intercept
(POUT = +20 dBm/Tone)
Output Second-Order Intercept
(POUT = +20 dBm/Tone)
2nd Harmonics3
(POUT = +10 dBm/Tone)
Input Return Loss
Min.
Typ.
0.01
0.01
17.9
2
12.3
4
12.0
6
11.9
8
11.3
10
10.3
0.01
+30.6
2
+31.0
4
+31.3
6
+31.5
8
+31.1
10
+31.0
0.01
+35.6
2
+32.9
4
+33.0
6
+33.5
8
+33.3
10
+32.2
0.01
+36.8
2
+44.1
4
+43.3
6
+42.2
8
+40.6
10
+38.5
0.01
+63.1
2
+44.5
4
+42.3
6
+42.1
8
+46.1
10
+53.4
0.01
-61.0
2
-42.5
4
-40.4
6
-39.9
8
-44.2
10
-50.6
0.01
23
2
12
4
17
6
24
8
23
10
33
Max.
Units
10
GHz
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dB
dBm
dBm
dBm
dBm
dBc
dB
PAGE 2 OF 13
MMIC SURFACE MOUNT
Power Amplifier
50 Ω
0.01 to 10 GHz
PMA5-83-2W+
2 W PSAT
ELECTRICAL SPECIFICATIONS1 AT 25°C, VDD= +12 V, UNLESS NOTED OTHERWISE (CONTINUED)
Parameter
Output Return Loss
Isolation
Noise Figure
Condition (GHz)
Min.
Typ.
0.01
24
2
12
4
10
6
14
8
12
10
12
0.01
50
2
47
4
42
6
38
8
36
10
34
0.5
6.8
2
3.7
4
2.8
6
2.9
8
3.3
10
Device Operating Voltage (VDD)
4
Max.
Units
dB
dB
dB
4.1
+12
+16
V
Device Operating Current (IDD)
400
mA
Gate Voltage (VG1)
-0.8
V
Gate Current (IG1)
15
Gate Voltage (VG2)
+5
Gate Current (IG2)
15
DC Current Variation vs. Temperature5
11
4,000
µA
V
4,000
µA
µA/°C
1. Tested on Mini-Circuits Characterization Test Board. See Figure 2. Board loss de-embedded.
2. PSAT defined as when the Output Power changes 0.1 dB per 1 dB change in Input Power.
3. 2nd harmonic measured at 2x the input frequency shown.
4. Current at PIN = -25 dBm. Increases to ~650 mA at P1dB.
5. (Current at +85°C - Current at -45°C)/(130°C). VGS held constant over temperature.
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PAGE 3 OF 13
MMIC SURFACE MOUNT
Power Amplifier
50 Ω
MMIC Amplifier
0.01 to 10 GHz
Typical Performance Curves
PMA5-83-2W+
2 W PSAT
PMA5-83-2W+
TYPICAL PERFORMANCE GRAPHS
GAIN vs. TEMPERATURE,
20
-45°C
VDD = +12 V, VG2 = +5 V
+25°C
VDD = +14 V, VG2 = +6 V
20
+85°C
15
10
5
0
PIN = -25 dBm, TEMPERATURE = +25°C
25
GAIN (dB)
GAIN (dB)
GAIN vs. DEVICE VOLTAGE,
PIN = -25 dBm, VDD = +12 V
25
VDD = +16 V, VG2 = +7 V
15
10
5
0
2
4
6
FREQUENCY (GHz)
8
10
0
12
0
INPUT RETURN LOSS vs.TEMPERATURE,
4
6
FREQUENCY (GHz)
INPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
+85°C
-15
-20
-25
-30
-35
-5
VDD = +14 V, VG2 = +6 V
VDD = +16 V, VG2 = +7 V
-10
-15
-20
-25
-30
0
2
4
6
FREQUENCY (GHz)
8
10
-35
12
0
PIN = -25 dBm, VDD = +12 V
OUTPUT RETURN LOSS (dB)
OUTPUT RETURN LOSS (dB)
+85°C
-8
-12
-16
2
4
6
FREQUENCY (GHz)
8
10
6
FREQUENCY (GHz)
8
10
12
VDD = +12 V, VG2 = +5 V
+25°C
0
4
PIN = -25 dBm, TEMPERATURE = +25°C
0
-45°C
-4
2
OUTPUT RETURN LOSS vs. DEVICE VOLTAGE,
OUTPUT RETURN LOSS vs. TEMPERATURE,
0
-20
12
VDD = +12 V, VG2 = +5 V
+25°C
-10
10
PIN = -25 dBm, TEMPERATURE = +25°C
0
-45°C
-5
8
INPUT RETURN LOSS vs. DEVICE VOLTAGE,
PIN = -25 dBm, VDD = +12 V
0
2
12
VDD = +14 V, VG2 = +6 V
-4
VDD = +16 V, VG2 = +7 V
-8
-12
-16
-20
0
2
4
6
FREQUENCY (GHz)
8
10
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12
PAGE 4 OF 13
MMIC SURFACE MOUNT
Power Amplifier
50 Ω
MMIC Amplifier
0.01 to 10 GHz
Typical Performance Curves
2 W PSAT
PMA5-83-2W+
TYPICAL PERFORMANCE GRAPHS
ISOLATION vs.TEMPERATURE,
ISOLATION vs. DEVICE VOLTAGE,
PIN = -25 dBm, VDD = +12 V
0
PIN = -25 dBm, TEMPERATURE = +25°C
0
-20
ISOLATION (dB)
-20
ISOLATION (dB)
PMA5-83-2W+
-40
-60
-80
-40
-60
-80
-45°C
VDD = +12 V, VG2 = +5 V
VDD = +14 V, VG2 = +6 V
+25°C
VDD = +16 V, VG2 = +7 V
+85°C
-100
0
2
4
6
8
10
-100
12
0
2
4
FREQUENCY (GHz)
P1dB vs. TEMPERATURE,
34
34
P1dB (dBm)
P1dB (dBm)
36
32
30
32
-45°C
+25°C
+85°C
0
2
4
6
8
VDD = +12 V, VG2 = +5 V
28
VDD = +14 V, VG2 = +6 V
VDD = +16 V, VG2 = +7 V
26
10
FREQUENCY (GHz)
0
2
4
34
34
PSAT (dBm)
36
32
30
-45°C
28
32
30
VDD = +12 V, VG2 = +5 V
28
+25°C
VDD = +14 V, VG2 = +6 V
VDD = +16 V, VG2 = +7 V
+85°C
4
6
FREQUENCY (GHz)
10
TEMPERATURE = +25°C
38
36
2
8
PSAT vs. DEVICE VOLTAGE,
VDD = +12 V
0
6
FREQUENCY (GHz)
PSAT vs. TEMPERATURE,
38
PSAT (dBm)
12
30
28
26
10
TEMPERATURE = +25°C
38
36
26
8
P1dB vs. DEVICE VOLTAGE,
VDD = +12 V
38
6
FREQUENCY (GHz)
8
10
26
0
2
4
6
8
10
FREQUENCY (GHz)
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PAGE 5 OF 13
MMIC SURFACE MOUNT
Power Amplifier
50 Ω
MMIC Amplifier
0.01 to 10 GHz
Typical Performance Curves
2 W PSAT
PMA5-83-2W+
TYPICAL PERFORMANCE GRAPHS
OUTPUT IP3 vs. TEMPERATURE,
OUTPUT IP3 vs. DEVICE VOLTAGE,
POUT = +20 dBm/TONE, VDD = +12 V
60
PMA5-83-2W+
POUT = +20 dBm/TONE, TEMPERATURE = +25°C
60
VDD = +12 V, VG2 = +5 V
-45°C
+25°C
55
+85°C
OUTPUT IP3 (dBm)
OUTPUT IP3 (dBm)
55
50
45
40
VDD = +16 V, VG2 = +7 V
50
45
40
35
30
VDD = +14 V, VG2 = +6 V
35
0
2
4
6
8
FREQUENCY (GHz)
30
10
0
NOISE FIGURE vs. TEMPERATURE,
-45°C
+85°C
NOISE FIGURE (dB)
NOISE FIGURE (dB)
6
5
4
3
2
VDD = +14 V, VG2 = +6 V
VDD = +16 V, VG2 = +7 V
6
5
4
3
2
0
2
4
6
8
0
10
0
2
FREQUENCY (GHz)
3RD HARMONICS (dBc)
2ND HARMONICS (dBc)
-50
-70
-90
VDD = +12 V, VG2 = +5 V
VDD = +14 V, VG2 = +6 V
VDD = +16 V, VG2 = +7 V
2
4
6
FREQUENCY (GHz)
10
VDD = +12 V, VG2 = +5 V
VDD = +14 V, VG2 = +6 V
VDD = +16 V, VG2 = +7 V
-30
0
8
POUT = +10 dBm, TEMPERATURE = +25°C
-10
-30
-110
6
3RD HARMONICS vs. DEVICE VOLTAGE,
POUT = +10 dBm, TEMPERATURE = +25°C
-10
4
FREQUENCY (GHz)
2ND HARMONICS vs. DEVICE VOLTAGE,
-130
10
1
1
0
8
VDD = +12 V, VG2 = +5 V
7
+25°C
7
6
TEMPERATURE = +25°C
8
8
4
FREQUENCY (GHz)
NOISE FIGURE vs. DEVICE VOLTAGE,
VDD = +12 V
9
2
8
-50
-70
-90
-110
10
-130
0
2
4
6
8
10
FREQUENCY (GHz)
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PAGE 6 OF 13
MMIC SURFACE MOUNT
Power Amplifier
50 Ω
MMIC Amplifier
0.01 to 10 GHz
Typical Performance Curves
2 W PSAT
PMA5-83-2W+
TYPICAL PERFORMANCE GRAPHS
GAIN VARIATION vs. TEMPERATURE,
OIP2 vs. POUT/TONE
VDD = +12 V, TONE SPACING = 1 MHz
65
GAIN VARIATION (dB/°C)
-45°C to +85°C
55
OIP2 (dBm)
PIN = -25 dBm, VDD = +12 V
-0.006
1 GHz
4 GHz
8 GHz
60
PMA5-83-2W+
50
45
40
-0.008
-0.010
-0.012
35
30
6
9
12
15
18
21
24
27
-0.014
400
10
350
PIN (dBm)
15
20
25
300
0
5
1 GHz
4 GHz
8 GHz
5
PDISS (W)
PAE (%)
25
VDD = +12 V
6
25
20
15
4
3
2
10
1 GHz
4 GHz
8 GHz
1
5
0
15
PDISS vs. PIN
VDD = +12 V
30
10
PIN (dBm)
PAE vs. PIN
35
20
1 GHz
4 GHz
8 GHz
450
15
10
10
500
IDD (mA)
POUT(dBm) & GAIN (dB)
20
8
VDD = +12 V
600
1 GHz POUT
4 GHz POUT
8 GHz POUT
1 GHz Gain
4 GHz Gain
8 GHz Gain
25
5
6
IDD vs. PIN
550
0
4
POUT & GAIN vs. PIN,
30
5
2
FREQUENCY (GHz)
VDD = +12 V, VG2 = +5 V, IDD = 400 mA, TEMPERATURE = +25°C
35
0
POUT (dBm)
0
5
10
15
PIN (dBm)
20
25
0
0
5
10
PIN (dBm)
15
20
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PAGE 7 OF 13
MMIC SURFACE MOUNT
Power Amplifier
50 Ω
MMIC Amplifier
0.01 to 10 GHz
Typical Performance Curves
2 W PSAT
PMA5-83-2W+
TYPICAL PERFORMANCE GRAPHS
P1dB vs. CURRENT,
GAIN vs. CURRENT,
PIN = -25 dBm, VDD = +12 V, VG2 = +5 V, TEMPERATURE = +25°C
25
400 mA
20
300 mA
400 mA
500 mA
36
500 mA
34
P1dB (dBm)
15
GAIN (dB)
VDD = +12 V, VG2 = +5 V, TEMPERATURE = +25°C
38
300 mA
10
5
32
30
28
0
0
2
4
6
FREQUENCY (GHz)
8
10
26
12
0
2
400 mA
500 mA
NOISE FIGURE (dB)
7
32
30
400 mA
4
6
8
5
4
3
1
500 mA
2
6
2
300 mA
28
0
0
10
0
2
4
TEMPERATURE = +25°C
2 GHz
4 GHz
6 GHz
8 GHz
-30
3RD HARMONICS (dBc)
-40
-60
2 GHz
4 GHz
6 GHz
8 GHz
10 GHz
-80
15
POUT (dBm)
10
TEMPERATURE = +25°C
-10
-20
10
8
3RD HARMONICS vs. POUT,
2ND HARMONICS vs. POUT,
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
0
10
300 mA
8
34
2nd HARMONICS (dBc)
8
VDD = +12 V, VG2 = +5 V, TEMPERATURE = +25°C
9
36
-100
6
NOISE FIGURE vs. CURRENT,
PSAT vs. CURRENT,
26
4
FREQUENCY (GHz)
VDD = +12 V, VG2 = +5 V, TEMPERATURE = +25°C
38
PSAT (dBm)
PMA5-83-2W+
20
25
-50
-70
-90
-110
5
10
15
POUT (dBm)
20
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PAGE 8 OF 13
MMIC SURFACE MOUNT
Power Amplifier
50 Ω
0.01 to 10 GHz
PMA5-83-2W+
2 W PSAT
6
ABSOLUTE MAXIMUM RATINGS
Parameter
Ratings
Operating Temperature (ground lead)
Storage Temperature
-45°C to +85°C
-65°C to +150°C
Junction Temperature7
+175°C
Total Power Dissipation
10 W
Input Power (CW), VDD = +12 V
+31 dBm
DC Voltage at RF-OUT + VDD
+16.5 V
DC Gate Voltage at VG1
-0.2 V
DC Gate Voltage at VG2
+7.5 V
DC Gate Current at VG1(IG1)
4.5 mA
DC Gate Current at VG2 (IG2)
4.5 mA
6. Permanent damage may occur if any of these limits are exceeded. Maximum ratings are not intended
for continuous normal operation.
7. Peak temperature on top of Die.
THERMAL RESISTANCE
Parameter
Ratings
8
Thermal Resistance (ΘJC)
6°C/W
8. ΘJC= (Hot Spot Temperature on Die - Temperature at Ground Lead)/Dissipated Power
ESD RATING
Class
Voltage Range
Reference Standard
HBM
1A
250 V to