SAV-331+

ULTRA LOW NOISE, MEDIUM CURRENT D-PHEMT Transistor 50Ω SAV-331+ 10-4000 MHz THE BIG DEAL y Low Noise Figure, 0.5 dB typ. at 300 MHz y Gain, 24.1 dB typ. at 300 MHz y High Output IP3, +32.3 dBm typ. at 300 MHz y Output Power at 1dB comp., +19.6 dBm typ. at 300 MHz y Low Current, 60mA y External biasing and matching required Generic photo used for illustration purposes only CASE STYLE: MMM1362 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS y Cellular y ISM y GSM y WCDMA y WiMax y WLAN y UNII and HIPERLAN PRODUCT OVERVIEW Mini-Circuits’ SAV-331+ is a MMIC D-PHEMT transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications systems. Manufactured using highly repeatable D-PHEMT* technology, the unit comes housed in a tiny 4-lead SOT-343 package. This model requires external biasing and matching. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION DRAIN 4 SOURCE DRAIN 1 GATE 3 GATE SOURCE 2 SOURCE SOT-343 (SC-70) PACKAGE Function Pin Number Description Source 2&4 Gate 3 Gate used for RF Input Drain 1 Drain used for RF output Source terminal, normally connected to ground * Depletion mode Pseudomorphic High Electron Mobility Transistor. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com REV. B ECO-010314 SAV-331+ RS/CP/AM 211022 PAGE 1 OF 4 ULTRA LOW NOISE, MEDIUM CURRENT D-PHEMT Transistor SAV-331+ ELECTRICAL SPECIFICATIONS AT TAMB=25°C, FREQUENCY 10 TO 4000 MHZ Symbol Parameter Condition Min. Typ. Max. Units -0.96 -0.69 -0.51 V DC Specifications VGS Operational Gate Voltage VDS=4V, IDS=60 mA Vp Pinch-off Voltage VDS=1.5 V, IDS= 10% of Idss -0.81 V IDSS Saturated Drain Current VDS=4V, VGS=0 V 228 µA GM — — — — — — — 282 — — — — — — — mS Transconductance VDS=4V, Gm=∆ IDS/∆VP IGDO Gate to Drain Leakage Current VGD=5V 1000 uA IGSS Gate leakage Current VGD=VGS=-4V 600 µA Specifications, Z0=50 Ohms (Figure 1)* NF Noise Figure VDS=4V, IDS=60 mA f=40 MHz 0.9 f=300 MHz 0.5 f=900 MHz 0.4 f=2000 MHz 0.5 f=4000 MHz Gain Gain VDS=4V, IDS=60 mA OIP3 P1dB Output IP3 VDS=4V, IDS=60 mA 24.6 f=300 MHz 24.1 21.3 f=900 MHz 13.9 11.5 f=40 MHz 30.9 f=300 MHz 32.3 f=900 MHz 33.5 f=2000 MHz 35.5 f=4000 MHz 38.7 f=40 MHz 19.1 VDS=4V, IDS=60 mA f=900 MHz 18.0 20.2 f=2000 MHz 18.9 21.1 Thermal Resistance dB 18.3 dBm 19.6 f=300 MHz Power output at 1 dB Compression 16.6 f=4000 MHz f=4000 MHz ΘJC 0.9 f=40 MHz f=2000 MHz dB 0.8 dBm 21.8 109 °C/W * Tested on Mini-Circuits TB-471+ test board MAXIMUM RATINGS(1) Symbol Parameter Max. Units VDS 2 Drain-Source Voltage 5 V VGS Gate-Source Voltage2 -5 V VGD Gate-Drain Voltage2 -5 V IDS Drain Current 149 mA PDISS Total Dissipated Power 400 mW PIN RF Input Power 20 dBm 2 TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C TSTD Storage Temperature -65 to 150 °C (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Assumes DC quiescent conditions, Vgs = -0.51 V, Vds = 4 V. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 2 OF 4 ULTRA LOW NOISE, MEDIUM CURRENT D-PHEMT Transistor SAV-331+ CHARACTERIZATION TEST CIRCUIT Drain Voltage Gate Voltage BIAS-T DUT RF-IN BIAS-T RF-OUT Mini - Circuits P/N ZX85-12G-S+ Mini - Circuits P/N ZX85-12G-S+ Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-471+) Gain, Output power at 1dB compression (P1 dB) and output Noise Figure measured using keysight PNA-X. IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24. Conditions: 1. Drain voltage (with reference to source, VDS)= 4V as shown. 2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table. 3. Gain: Pin= -25dBm 4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. 5. No external matching components used. MCL IN OUT 474-01 DUT TB-471+ Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-471+ (Material: Rogers 4350, Thickness: 0.02”) PRODUCT MARKING 33 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 3 OF 4 ULTRA LOW NOISE, MEDIUM CURRENT D-PHEMT Transistor SAV-331+ ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS C LIC K HERE Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style MMM1362 Plastic molded SOT-343 (SC-70) style package, lead finish: matte-tin Tape & Reel Standard quantities available on reel F90 7” reels with 20, 50, 100, 200, 500,1K,2K or 3K devices Suggested Layout for PCB Design PL-300 Evaluation Board TB-471+ Environmental Ratings ENV08T2 ESD RATING Human Body Model (HBM): Class 0 (