ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
50Ω
SAV-541+
0.045-6GHz
THE BIG DEAL
y Low Noise Figure, 0.5 dB
y Gain, 17 dB at 2 GHz
y High Output IP3, +33 dBm
y Output Power at 1dB comp., +20 dBm
y High Current, 60mA
y Wide bandwidth
y External biasing and matching required
y May be used as replacement a,b for Avago ATF-54143
Generic photo used for illustration purposes only
CASE STYLE: MMM1362
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
APPLICATIONS
y Cellular
y ISM
y GSM
y WCDMA
y WiMax
y WLAN
y UNII and HIPERLAN
PRODUCT OVERVIEW
SAV-541+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with
a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise
figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We
offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please
see our TAMP family of models on our web site.
SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION
DRAIN
DRAIN 1
4 SOURCE
GATE
3 GATE
SOURCE 2
SOURCE
SOT-343 (SC-70) PACKAGE
Function
Pin Number
Description
Source
2&4
Gate
3
Gate used for RF Input
Drain
1
Drain used for RF output
Source terminal, normally connected to ground
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance
criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
b. The Avago ATF-54143 part number is used for identification and comparison purposes only.
REV. F
ECO-010314
SAV-541+
211022
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PAGE 1 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
ELECTRICAL SPECIFICATIONS AT TAMB=25°C, FREQUENCY 0.045 TO 6 GHZ
Symbol
Parameter
Condition
Min.
Typ.
Max.
Units
V
DC Specifications
VGS
Operational Gate Voltage
VDS=3V, IDS=60 mA
0.37
0.48
0.69
VTH
Threshold Voltage
VDS=3V, IDS=4 mA
0.18
0.26
0.38
V
IDSS
Saturated Drain Current
VDS=3V, VGS=0 V
1.0
5.0
µA
GM
Transconductance
VDS=3V, Gm=∆ IDS/∆VGS
∆VGS=VGS1-VGS2
VGS1=VGS at IDS=60 mA
VGS2=VGS1+0.05V
—
—
392
—
—
—
—
560
—
—
mS
IGSS
Gate leakage Current
VGD=VGS=-3V
200
µA
—
—
230
—
—
RF Specifications, Z0=50 Ohms (Figure 1)
VDS=3V, IDS=60 mA
NF(1)
Noise Figure
VDS=4V, IDS=60 mA
OIP3
P1dB(2)
0.4
—
f=2.0 GHz
0.5
0.9
f=3.9 GHz
1.0
—
f=5.8 GHz
1.9
—
f=2.0 GHz
f=0.9 GHz
—
0.5
23.2
—
—
f=2.0 GHz
15.0
17.6
18.5
f=3.9 GHz
—
12.5
—
f=5.8 GHz
—
8.7
—
VDS=4V, IDS=60 mA
f=2.0 GHz
—
17.4
—
VDS=3V, IDS=60 mA
f=0.9 GHz
—
32.6
f=2.0 GHz
30.0
33.1
f=3.9 GHz
—
33.0
f=5.8 GHz
—
31.0
VDS=3V, IDS=60 mA
Gain
f=0.9 GHz
Gain
Output IP3
VDS=4V, IDS=60 mA
f=2.0 GHz
35.1
VDS=3V, IDS=60 mA
f=0.9 GHz
19.1
f=2.0 GHz
19.2
f=3.9 GHz
19.0
f=5.8 GHz
18.2
f=2.0 GHz
21.5
Power output at 1 dB
Compression
VDS=4V, IDS=60 mA
dB
dB
dBm
dBm
MAXIMUM RATINGS(3)
Symbol
Parameter
Max.
Units
VDS(4)
Drain-Source Voltage
5
V
V
V
Gate-Source Voltage
-5 to 0.7
VGD(4)
Gate-Drain Voltage
-5 to 0.7
V
IDS(4)
Drain Current
120
mA
(4)
GS
IGS
Gate Current
2
mA
PDISS
Total Dissipated Power
360
mW
PIN(5)
RF Input Power
17
dBm
TCH
Channel Temperature
150
°C
TOP
Operating Temperature
-40 to 85
°C
TSTD
Storage Temperature
-65 to 150
°C
ΘJC
Thermal Resistance
160
°C/W
(1) Includes test board loss (tested on Mini-Circuits TB-471+ test board)
(2) Drain current was allowed to increase during compression measurements.
(3) Operation of this device above any one of these parameters may cause permanent damage.
(4) Assumes DC quiescent conditions.
(5) IGS is limited to 2 mA during test.
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PAGE 2 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
CHARACTERIZATION TEST CIRCUIT
Drain Voltage
Gate Voltage
DUT
RF-IN
RF-OUT
BIAS-T
BIAS-T
Mini - Circuits P/N
ZX85-12G-S+
Mini - Circuits P/N
ZX85-12G-S+
Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-471+)
Gain, Output power at 1dB compression (P1 dB) and output
IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using Agilent Noise Figure meter N8975A and Noise Source N4000A.
Conditions:
1. Drain voltage (with reference to source, VDS)= 3 or 4V as shown.
2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table.
3. Gain: Pin= -25dBm
4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
5. No external matching components used.
MCL
IN
OUT
474-01
DUT
TB-471+
Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-471+ (Material: Rogers 4350, Thickness: 0.02”)
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PAGE 3 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
TYPICAL PERFORMANCE CURVES
I-V (VGS=0.1V PER STEP) (2)
120
NOISE FIGURE vs IDS @ 2 GHz (1)
0.2V
0.3V
80
0.4V
0.5V
60
0.6V
40
0.7V
0.7
VDS=3V
VDS=4V
NOISE FIGURE(dB)
100
IDS (mA)
0.8
0.6
0.5
0.4
0.3
0.2
20
0.1
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS (V)
F Min vs IDS @ 0.9 GHz (3)
NOISE FIGURE vs IDS @ 0.9 GHz (1)
0.8
0.7
NOISE FIGURE (dB)
F MIN (dB)
0.20
0.19
0.18
0.17
0.16
0.5
0.4
0.3
VDS=2V
VDS=3V
0.2
VDS=4V
0.1
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
GAIN vs IDS @ 2 GHz (1)
VDS=2V
VDS=3V
VDS=4V
GAIN (dB)
F MIN (dB)
F Min vs IDS @ 2 GHz (3)
0.45
0.43
0.41
0.39
0.37
0.35
0.33
0.31
0.29
0.27
0.25
VDS=4V
0.6
0.15
0.14
0.13
0.12
0.11
0.10
VDS=3V
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
14.5
14.0
VDS=3V
VDS=4V
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain Current was allowed to increase during compression measurement.
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PAGE 4 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
TYPICAL PERFORMANCE CURVES
OIP3 vs IDS @ 2GHz (1)
45
VDS=3V
VDS=4V
40
OIP3 (dBm)
GAIN (dB)
GAIN vs IDS @ 0.9 GHz (1)
25.0
24.5
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
VDS=3V
35
30
25
20
15
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
OIP3 vs IDS @ 0.9 GHz (1)
P1dB vs IDS @ 2 GHz (1,4)
45
25
VDS=3V
24
VDS=4V
VDS=3V
23
35
P1dB (dBm)
OIP3 (dBm)
40
VDS=4V
30
25
VDS=4V
22
21
20
19
18
17
20
16
15
15
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
P1dB vs IDS @ 0.9 GHz (1,4)
NF vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=60mA
25
VDS=3V
VDS=4V
NOISE FIGURE (dB)
24
P1dB (dBm)
23
22
21
20
19
18
17
16
15
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IDS (mA)
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
-40°C
+25°C
+85°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain Current was allowed to increase during compression measurement.
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PAGE 5 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
TYPICAL PERFORMANCE CURVES
32
29
26
23
20
17
14
11
8
5
2
-45°C
+25°C
OIP3 vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=60mA
45
43
41
39
37
35
33
31
29
27
25
+85°C
OIP3 (dBm)
GAIN (dB)
GAIN vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=60mA
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
-45°C
NF vs FREQUENCY & TEMPERATURE (1)
@ VDS=4V, IDS=60mA
+85°C
NOISE FIGURE (dB)
+25°C
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
-40°C
+25°C
+85°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
GAIN vs FREQUENCY & TEMPERATURE (1)
@ VDS=4V, IDS=60mA
OIP3 vs FREQUENCY & TEMPERATURE (1)
@ VDS=4V, IDS=60mA
-45°C
+25°C
+85°C
OIP3 (dBm)
P1dB (dBm)
GAIN (dB)
32
29
26
23
20
17
14
11
8
5
2
-45°C
+85°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
P1dB vs FREQUENCY & TEMPERATURE (1,4)
@ VDS=3V, IDS=60mA
22
21
21
20
20
19
18
18
17
17
16
+25°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
45
43
41
39
37
35
33
31
29
27
25
-45°C
+25°C
+85°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain Current was allowed to increase during compression measurement.
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PAGE 6 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
TYPICAL PERFORMANCE CURVES
25
24
24
23
22
22
21
20
19
19
18
-45°C
+25°C
F Min vs FREQ @ VDS=3V (3)
1.4
+85°C
1.2
F MIN (dB)
P1dB (dBm)
P1dB vs FREQUENCY & TEMPERATURE (1,4)
@ VDS=4V, IDS=60mA
40 mA
60 mA
80 mA
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain Current was allowed to increase during compression measurement.
REFERENCE PLANE LOCATION FOR S AND NOISE PARAMETERS
(see data in pages 8-11) (Refer to Application Note AN-60-040)
Fig 3. Reference Plane Location
Noise parameters were measured over 0.5 to 6 GHz by Modelithics® using a solid state tuner-based noise parameter (NP) test system available from Maury Microwave. F Min, optimimum
source reflection coefficient and noise resistance values are calculated values based on a set of measurements made at approximately 16 different impedances. Some data smoothing was
applied to arrive at the presented data set.
S-parameters were measured by Modelithics® on an Anritsu Lightning vector network analyzer over 0.1 to 18GHz using 350um pitch RF probes from GGB industries combined with customized thru-reflect-line (TRL) calibration standards. The reference plane is at the device package leads, as shown in the picture.
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PAGE 7 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
TYPICAL S-PARAMETERS, VDS=3V AND IDS=40 MA (FIG. 3)
S11
S21
S12
S22
Freq.
(GHz)
Mag.
Ang.
Mag.
Mag (dB)
Ang.
Mag.
Ang.
Mag.
Ang.
MSG/MAG
(dB)
0.1
0.99
-16.6
25.3
28.1
169.5
0.008
89.1
0.55
-14.7
34.8
0.5
0.86
-74.6
19.6
25.8
132.2
0.035
54.4
0.43
-55.3
27.5
0.9
0.75
-112.6
14.2
23.0
109.0
0.047
40.5
0.32
-83.3
24.8
1.0
0.74
-120.4
13.2
22.4
104.6
0.049
38.4
0.30
-89.5
24.3
1.5
0.68
-149.6
9.5
19.6
86.7
0.057
31.3
0.23
-114.1
22.3
1.9
0.66
-166.7
7.7
17.8
75.4
0.062
27.5
0.19
-131.2
21.0
2.0
0.66
-170.5
7.4
17.4
72.9
0.063
26.6
0.19
-135.2
20.7
2.5
0.65
172.8
6.0
15.6
61.0
0.07
22.9
0.17
-153.9
19.3
3.0
0.65
158.7
5.0
14.1
50.2
0.077
19.5
0.16
-171.3
18.2
4.0
0.66
134.4
3.8
11.6
30.0
0.091
11.9
0.16
156.7
15.8
5.0
0.68
113.5
3.0
9.7
11.1
0.104
2.7
0.18
130.5
13.3
6.0
0.71
94.7
2.5
8.0
-7.1
0.118
-7.5
0.22
109.1
11.7
7.0
0.75
77.8
2.1
6.4
-24.7
0.13
-18.3
0.28
90.7
10.5
8.0
0.78
62.4
1.8
5.0
-41.5
0.14
-29.4
0.33
74.8
9.6
9.0
0.82
47.8
1.5
3.6
-57.8
0.146
-41.0
0.40
60.0
9.0
10.0
0.85
33.7
1.3
2.3
-73.9
0.15
-52.7
0.46
46.1
8.8
11.0
0.88
20.6
1.1
1.0
-89.3
0.152
-64.4
0.53
33.2
8.7
12.0
0.90
8.4
1.0
-0.2
-104.0
0.153
-75.8
0.58
21.2
8.0
13.0
0.91
-3.5
0.9
-1.3
-118.3
0.154
-87.1
0.62
10.3
7.5
14.0
0.92
-14.4
0.8
-2.3
-131.9
0.154
-97.9
0.66
0.0
7.0
15.0
0.94
-23.0
0.7
-3.6
-143.0
0.148
-106.3
0.70
-8.7
6.5
16.0
0.95
-30.4
0.6
-4.9
-153.0
0.139
-114.2
0.75
-16.6
6.1
17.0
0.95
-39.0
0.5
-6.0
-164.0
0.134
-122.6
0.77
-25.2
5.7
18.0
0.94
-48.3
0.5
-6.9
-175.7
0.131
-131.4
0.79
-33.9
5.4
TYPICAL NOISE PARAMETERS, VDS=3V AND
IDS=40 MA (FIG. 3)
MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE
GAIN (MAG) vs. FREQUENCY
40
Freq.
(GHz)
F Min.
(dB)
GOpt
(Magnitude)
GOpt
(Angle)
Rn/50
Ga
Associated
Gain (dB)
0.5
0.071
0.34
27.00
0.05
27.9
15
0.7
0.101
0.35
37.65
0.05
25.7
10
0.9
0.131
0.35
48.14
0.04
23.9
5
1.0
0.146
0.36
53.32
0.04
23.2
MSG/MAG and S21 (dB)
35
MSG/MAG
S21(dB)
30
25
20
0
1.9
0.281
0.39
98.07
0.03
18.3
-10
2.0
0.296
0.39
102.83
0.03
17.9
-15
2.4
0.356
0.40
121.48
0.03
16.6
3.0
0.446
0.42
148.20
0.03
15.0
3.9
0.581
0.45
-174.52
0.05
13.4
5.0
0.747
0.48
-133.51
0.10
11.9
5.8
0.867
0.50
-106.84
0.14
10.9
6.0
0.897
0.50
-100.59
0.15
10.6
-5
0
5
10
Frequency (GHz)
Notes:
F Min.: Minimum Noise Figure
GOpt: Optimum Source Reflection Coefficient
Rn: Equivalent noise resistance
15
20
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PAGE 8 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
TYPICAL S-PARAMETERS, VDS=3V AND IDS=60 MA (FIG. 3)
S11
S21
S12
Mag.
Ang.
Mag.
Mag (dB)
Ang.
Mag.
Ang.
Mag.
Ang.
MSG/MAG
(dB)
0.1
0.99
-18.2
27.8
28.9
168.7
0.009
78.4
0.50
-14.8
35.0
0.5
0.85
-78.1
21.0
26.5
130.2
0.032
53.5
0.39
-60.2
28.1
0.9
0.74
-116.2
14.9
23.5
107.3
0.044
41.8
0.29
-90.1
25.3
1.0
0.72
-123.9
13.8
22.8
102.9
0.045
39.7
0.27
-96.8
24.9
1.5
0.67
-152.5
9.9
19.9
85.5
0.053
33.6
0.21
-122.9
22.7
1.9
0.65
-169.2
8.0
18.1
74.5
0.059
30.3
0.18
-140.6
21.4
2.0
0.65
-172.8
7.7
17.7
72.0
0.06
29.8
0.18
-144.8
21.0
2.5
0.65
170.9
6.2
15.9
60.5
0.068
26.6
0.17
-163.6
19.6
3.0
0.64
157.0
5.2
14.3
49.9
0.075
22.8
0.16
179.6
18.4
4.0
0.66
133.3
3.9
11.9
29.9
0.091
14.6
0.17
149.8
15.7
5.0
0.68
112.7
3.1
9.9
11.2
0.105
4.8
0.20
125.6
13.3
6.0
0.71
94.1
2.6
8.2
-6.8
0.12
-5.7
0.24
105.4
11.8
7.0
0.74
77.4
2.2
6.7
-24.1
0.132
-17.3
0.29
87.9
10.6
8.0
0.78
62.1
1.8
5.3
-40.8
0.142
-28.5
0.35
72.6
9.8
9.0
0.81
47.7
1.6
3.9
-56.9
0.149
-40.4
0.41
58.1
9.1
10.0
0.85
33.6
1.3
2.5
-72.8
0.152
-52.4
0.48
44.4
8.8
11.0
0.88
20.5
1.2
1.2
-88.0
0.154
-64.1
0.54
31.6
8.7
12.0
0.90
8.3
1.0
0.0
-102.6
0.154
-75.7
0.59
19.8
8.1
13.0
0.91
-3.5
0.9
-1.0
-116.9
0.155
-87.1
0.63
8.9
7.6
14.0
0.92
-14.4
0.8
-2.0
-130.4
0.155
-97.8
0.66
-1.3
7.1
15.0
0.93
-23.0
0.7
-3.2
-141.3
0.149
-106.3
0.71
-9.9
6.7
16.0
0.95
-30.5
0.6
-4.6
-151.3
0.14
-114.0
0.75
-17.6
6.3
17.0
0.95
-39.1
0.5
-5.6
-162.3
0.134
-122.4
0.77
-26.1
5.9
18.0
0.94
-48.4
0.5
-6.4
-174.0
0.132
-131.7
0.79
-34.7
5.6
TYPICAL NOISE PARAMETERS,
VDS=3V AND IDS=60 MA (FIG. 3)
MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE
GAIN (MAG) vs. FREQUENCY
40
35
MSG/MAG and S21 (dB)
S22
Freq.
(GHz)
Freq.
(GHz)
F Min.
(dB)
GOpt
(Magnitude)
GOpt
(Angle)
Rn/50
Ga
Associated
Gain (dB)
0.5
0.071
0.34
27.00
0.05
27.9
0.7
0.101
0.35
37.65
0.05
25.7
0.9
0.131
0.35
48.14
0.04
23.9
5
0
-5
1.0
0.146
0.36
53.32
0.04
23.2
1.9
0.281
0.39
98.07
0.03
18.3
-10
-15
2.0
0.296
0.39
102.83
0.03
17.9
2.4
0.356
0.40
121.48
0.03
16.6
3.0
0.446
0.42
148.20
0.03
15.0
3.9
0.581
0.45
-174.52
0.05
13.4
5.0
0.747
0.48
-133.51
0.10
11.9
5.8
0.867
0.50
-106.84
0.14
10.9
6.0
0.897
0.50
-100.59
0.15
10.6
MSG/MAG
S21(dB)
30
25
20
15
10
0
5
10
Frequency (GHz)
Notes:
F Min: Minimum Noise Figure
GOpt: Optimum Source Reflection Coefficient
Rn: Equivalent noise resistance
15
20
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PAGE 9 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
TYPICAL S-PARAMETERS, VDS=3V AND IDS=80 MA (FIG. 3)
S11
S21
S12
Mag.
Ang.
Mag.
Mag (dB)
Ang.
Mag.
Ang.
Mag.
Ang.
MSG/MAG
(dB)
0.1
0.99
-18.3
29.4
29.4
168.4
0.008
84.4
0.48
-16.4
35.6
0.5
0.84
-79.6
21.8
26.8
129.4
0.031
54.8
0.36
-62.3
28.4
0.9
0.73
-117.7
15.4
23.7
106.5
0.041
42.7
0.27
-93.1
25.7
1.0
0.71
-125.3
14.2
23.1
102.2
0.043
40.4
0.25
-99.8
25.2
1.5
0.66
-153.7
10.2
20.2
85.0
0.051
35.2
0.20
-126.4
23.0
1.9
0.65
-170.2
8.2
18.3
74.1
0.057
32.5
0.18
-144.2
21.6
2.0
0.65
-173.8
7.8
17.9
71.7
0.059
31.6
0.18
-148.3
21.3
2.5
0.64
170.2
6.3
16.1
60.2
0.066
28.2
0.16
-167.0
19.8
3.0
0.64
156.4
5.3
14.5
49.8
0.074
24.7
0.16
176.5
18.6
4.0
0.65
132.9
4.0
12.1
30.0
0.09
16.1
0.17
147.5
15.7
5.0
0.67
112.4
3.2
10.1
11.4
0.106
6.1
0.20
124.0
13.4
6.0
0.70
94.0
2.6
8.4
-6.5
0.12
-5.0
0.24
104.4
11.9
7.0
0.74
77.4
2.2
6.9
-23.8
0.133
-16.3
0.29
87.2
10.8
8.0
0.77
62.1
1.9
5.4
-40.4
0.142
-27.9
0.35
71.9
9.9
9.0
0.81
47.7
1.6
4.0
-56.4
0.15
-39.9
0.42
57.5
9.3
10.0
0.85
33.6
1.4
2.7
-72.3
0.153
-52.0
0.48
43.8
8.9
11.0
0.87
20.5
1.2
1.4
-87.4
0.155
-63.9
0.54
31.2
8.8
12.0
0.90
8.3
1.0
0.2
-102.0
0.155
-75.4
0.59
19.4
8.2
13.0
0.91
-3.5
0.9
-0.8
-116.2
0.156
-86.8
0.63
8.6
7.6
14.0
0.92
-14.4
0.8
-1.8
-129.6
0.156
-97.7
0.66
-1.6
7.2
15.0
0.93
-23.0
0.7
-3.0
-140.7
0.15
-106.2
0.71
-10.2
6.7
16.0
0.95
-30.5
0.6
-4.4
-150.6
0.14
-113.9
0.75
-17.9
6.4
17.0
0.95
-39.1
0.5
-5.4
-161.5
0.135
-122.3
0.77
-26.4
6.0
18.0
0.94
-48.5
0.5
-6.2
-173.4
0.133
-131.2
0.78
-35.0
5.7
TYPICAL NOISE PARAMETERS,
VDS=3V AND IDS=80 MA (FIG. 3)
MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE
GAIN (MAG) vs. FREQUENCY
40
35
MSG/MAG and S21 (dB)
S22
Freq.
(GHz)
MSG/MAG
S21(dB)
30
25
20
15
10
5
0
-5
-10
-15
0
5
10
Frequency (GHz)
Notes:
F Min: Minimum Noise Figure
GOpt: Optimum Source Reflection Coefficient
Rn: Equivalent noise resistance
15
20
Freq.
(GHz)
F Min.
(dB)
GOpt
(Magnitude)
GOpt
(Angle)
Rn/50
Ga
Associated
Gain (dB)
0.5
0.086
0.31
27.68
0.05
28.4
0.7
0.123
0.31
39.97
0.05
26.3
0.9
0.159
0.32
51.98
0.04
24.6
1.0
0.178
0.32
57.88
0.04
23.8
1.9
0.342
0.35
107.88
0.03
19.1
2.0
0.360
0.35
113.08
0.03
18.7
2.4
0.433
0.36
133.22
0.03
17.4
3.0
0.543
0.39
161.34
0.04
15.9
3.9
0.707
0.43
-161.16
0.07
14.1
5.0
0.908
0.49
-122.96
0.13
12.5
5.8
1.055
0.54
-100.45
0.20
11.4
6.0
1.091
0.56
-95.52
0.22
11.2
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PAGE 10 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
TYPICAL S-PARAMETERS, VDS=4V AND IDS=60 MA (FIG. 3)
S11
S21
S12
Mag.
Ang.
Mag.
Mag (dB)
Ang.
Mag.
Ang.
Mag.
Ang.
MSG/MAG
(dB)
0.1
0.99
-17.9
27.9
28.9
168.5
0.008
83.7
0.53
-14.7
35.2
0.5
0.85
-77.9
21.0
26.5
130.2
0.032
54.0
0.40
-57.1
28.2
0.9
0.74
-116.0
15.0
23.5
107.3
0.043
41.4
0.29
-84.8
25.5
1.0
0.72
-123.7
13.9
22.8
102.9
0.044
39.3
0.27
-90.9
25.0
1.5
0.67
-152.3
10.0
20.0
85.5
0.052
33.5
0.21
-115.1
22.8
1.9
0.65
-169.0
8.1
18.1
74.5
0.058
30.2
0.18
-131.8
21.5
2.0
0.65
-172.6
7.7
17.7
72.0
0.059
29.6
0.17
-135.9
21.1
2.5
0.64
171.1
6.2
15.9
60.4
0.066
26.5
0.15
-154.5
19.7
3.0
0.64
157.3
5.2
14.4
49.8
0.073
22.9
0.14
-171.8
18.5
4.0
0.66
133.5
3.9
11.9
29.9
0.088
15.0
0.15
156.0
15.7
5.0
0.68
112.9
3.1
10.0
11.1
0.103
5.6
0.17
129.9
13.4
6.0
0.71
94.4
2.6
8.3
-6.9
0.117
-4.9
0.21
108.6
11.9
7.0
0.74
77.7
2.2
6.8
-24.3
0.13
-16.2
0.26
90.7
10.8
8.0
0.78
62.3
1.9
5.3
-41.1
0.14
-27.3
0.32
74.9
9.9
9.0
0.81
47.9
1.6
4.0
-57.4
0.147
-39.2
0.39
60.2
9.3
10.0
0.85
33.8
1.4
2.6
-73.5
0.151
-51.1
0.46
46.3
9.5
11.0
0.88
20.6
1.2
1.3
-88.9
0.154
-62.9
0.52
33.4
8.8
12.0
0.90
8.5
1.0
0.1
-103.6
0.154
-74.4
0.57
21.5
8.2
13.0
0.91
-3.4
0.9
-1.0
-118.0
0.156
-85.9
0.61
10.6
7.6
14.0
0.92
-14.3
0.8
-2.0
-131.6
0.156
-96.8
0.65
0.3
7.1
15.0
0.94
-22.9
0.7
-3.2
-142.8
0.149
-105.4
0.70
-8.5
6.7
16.0
0.95
-30.4
0.6
-4.6
-152.9
0.14
-113.3
0.74
-16.4
6.3
17.0
0.95
-39.0
0.5
-5.6
-164.0
0.135
-121.7
0.77
-25.0
5.9
18.0
0.95
-48.3
0.5
-6.5
-175.7
0.133
-131.0
0.78
-33.7
5.5
MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE
GAIN (MAG) vs. FREQUENCY
MSG/MAG and S21 (dB)
S22
Freq.
(GHz)
40
35
30
25
20
15
10
5
0
-5
-10
-15
TYPICAL NOISE PARAMETERS,
VDS=4V AND IDS=60 MA (FIG. 3)
MSG/MAG
S21(dB)
0
5
10
Frequency (GHz)
Notes:
F Min: Minimum Noise Figure
GOpt: Optimum Source Reflection Coefficient
Rn: Equivalent noise resistance
15
20
Freq.
(GHz)
F Min.
(dB)
GOpt
(Magnitude)
GOpt
(Angle)
Rn/50
Ga
Associated
Gain (dB)
0.5
0.086
0.34
26.43
0.06
28.1
0.7
0.121
0.34
37.91
0.05
26.0
0.9
0.156
0.34
49.17
0.05
24.2
1.0
0.173
0.34
54.72
0.04
23.4
1.9
0.331
0.35
102.19
0.03
18.7
2.0
0.349
0.35
107.19
0.03
18.3
2.4
0.419
0.36
126.64
0.03
17.0
3.0
0.524
0.37
154.19
0.04
15.4
3.9
0.682
0.41
-168.19
0.06
13.7
5.0
0.875
0.47
-128.23
0.12
12.2
5.8
1.016
0.52
-103.33
0.17
11.2
6.0
1.051
0.54
-97.65
0.18
11.0
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PAGE 11 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
RECOMMENDED APPLICATION CIRCUIT
Vcc (+5V DC)
DC BIAS CIRCUIT
R1
R3
Q1
R4
Q2
R2
RF CIRCUIT
DRAIN
L2
L1
INPUT
MATCHING
CIRCUIT
(MUST PASS
DC)
RF-IN
C1
GATE
SOURCE
OUTPUT
MATCHING
CIRCUIT
(MUST PASS
DC)
RF-OUT
C2
DUT
VDS, V (nom)
3
4
IDS, mA (nom)
60mA
60mA
R1
4320Ω
4320Ω
R2
4320Ω
4320Ω
R3
3570Ω
1210Ω
R4
33.2Ω
16.7Ω
Q1
MMBT3906*
MMBT3906*
Q2
MMBT3906*
MMBT3906*
C1
0.01µF
0.01µF
C2
0.01µF
0.01µF
L1**
840nH
840nH
L2**
840nH
840nH
OPTIMIZED AMPLIFIER CIRCUITS
For band specific, drop-in modules, and as an alternative to designing circuits,
please refer to Mini-Circuits TAMP and RAMP series models which are based
upon SAV/TAV E-PHEMT’s and include all DC blocking, bias, matching and
stabilization circuitry, without need for any external components.
*Fairchild Semiconductor™ part number
**Piconics™ part number CC45T47K240G5
PRODUCT MARKING
54
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PAGE 12 OF 13
ULTRA LOW NOISE, MEDIUM CURRENT
E-PHEMT Transistor
SAV-541+
ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS
C LIC K HERE
Data Table
Performance Data
Swept Graphs
Performance data, graphs, s-parameter data set (.zip file)
Case Style
MMM1362
Plastic molded SOT-343 (SC-70) style package, lead finish: matte tin
Tape & Reel
Standard quantities available on reel
F90
Standard quantities availabe on reel: 7” reels with 20, 50, 100, 200, 500, 1K, 2K, or 3K devices.
Suggested Layout for PCB Design
PL-300
Evaluation Board
TB-471+
Environmental Ratings
ENV08T2
ESD RATING
Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999
MSL RATING
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D
MSL TEST FLOW CHART
Start
Visual
Inspection
Electrical
Test
SAM
Analysis
Reflow 3 cycles
260°C
Soak
85°C/85RH
168 hours
Bake at 125°C,
24 hours
Visual
Inspection
Electrical
Test
SAM
Analysis
Finish
NOTES
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights
and benefits contained therein. For a full statement of the standard. Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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PAGE 13 OF 13
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