SAV-551+

ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ 0.045-6GHz THE BIG DEAL y Low Noise Figure, 0.5 dB y Gain, 16 dB at 2 GHz y High Output IP3, +25 dBm y Output Power at 1dB comp., +18 dBm y Low Current, 15mA y Wide bandwidth y External biasing and matching required y May be used as replacement a,b for Avago ATF-55143 Generic photo used for illustration purposes only CASE STYLE: MMM1362 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications APPLICATIONS y Cellular y ISM y GSM y WCDMA y WiMax y WLAN y UNII and HIPERLAN PRODUCT OVERVIEW SAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION DRAIN DRAIN 1 4 SOURCE GATE 3 GATE SOURCE 2 SOURCE SOT-343 (SC-70) PACKAGE Function Pin Number Description Source 2&4 Gate 3 Gate used for RF Input Drain 1 Drain used for RF output Source terminal, normally connected to ground * Enhancement mode Pseudomorphic High Electron Mobility Transistor. a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses. b. The Avago ATF-54143 part number is used for identification and comparison purposes only REV. F ECO-010314 SAV-551+ 211025 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ ELECTRICAL SPECIFICATIONS AT TAMB=25°C, FREQUENCY 0.045 TO 6 GHz Symbol Parameter Condition Min. Typ. Max. Units DC Specifications VGS Operational Gate Voltage VDS=3V, IDS=15 mA 0.22 0.34 0.46 V VTH Threshold Voltage VDS=3V, IDS=4 mA 0.18 0.26 0.38 V IDSS Saturated Drain Current VDS=3V, VGS=0 V 1.0 5.0 µA — — 251 — — — — 285 — — mS 95 µA GM Transconductance VDS=3V, Gm=∆ IDS/∆VGS ∆VGS=VGS1-VGS2 VGS1=VGS at IDS=15 mA VGS2=VGS1+0.05V IGSS Gate leakage Current VGD=VGS=-3V — — 215 — — RF Specifications, Z0=50 Ohms (Figure 1) VDS=3V, IDS=15 mA NF(1) Noise Figure Gain OIP3 (2) P1dB f=0.9 GHz 0.5 — f=2.0 GHz 0.6 0.9 f=3.9 GHz 1.0 — f=5.8 GHz 1.8 — VDS=4V, IDS=15 mA f=2.0 GHz 0.6 — VDS=3V, IDS=15 mA f=0.9 GHz — 20.9 f=2.0 GHz 14.4 15.9 17.5 f=3.9 GHz — 11.2 — f=5.8 GHz — 7.6 — VDS=4V, IDS=15 mA f=2.0 GHz — 16.0 — VDS=3V, IDS=15 mA f=0.9 GHz — 22.4 f=2.0 GHz 20.0 24.3 f=3.9 GHz — 26.9 Gain Output IP3 f=5.8 GHz — 28.5 VDS=4V, IDS=15 mA f=2.0 GHz — 24.4 VDS=3V, IDS=15 mA f=0.9 GHz — 17.2 f=2.0 GHz 16.0 17.5 f=3.9 GHz — 18.5 f=5.8 GHz — 17.5 f=2.0 GHz — 20.0 Power output at 1 dB Compression VDS=4V, IDS=15 mA dB dB dBm dBm MAXIMUM RATINGS(3) Symbol Max. Units Drain-Source Voltage 5 V Gate-Source Voltage -5 to 0.7 V Gate-Drain Voltage -5 to 0.7 V (4) DS Drain Current 100 mA IGS Gate Current 2 mA PDISS Total Dissipated Power 360 mW V (4) DS VGS(4) VGD(4) I Parameter PIN(5) RF Input Power 17 dBm TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C TSTD Storage Temperature -65 to 150 °C ΘJC Thermal Resistance 160 °C/W (1) Includes test board loss (tested on Mini-Circuits TB-471+ test board) (2) Drain current was allowed to increase during compression measurements. (3) Operation of this device above any one of these parameters may cause permanent damage. (4) Assumes DC quiescent conditions. (5) IGS is limited to 2 mA during test. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 2 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ CHARACTERIZATION TEST CIRCUIT Drain Voltage Gate Voltage DUT RF-IN RF-OUT BIAS-T BIAS-T Mini - Circuits P/N ZX85-12G-S+ Mini - Circuits P/N ZX85-12G-S+ Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-471+) Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24. Noise Figure measured using Agilent Noise Figure meter N8975A and Noise Source N4000A. Conditions: 1. Drain voltage (with reference to source, VDS)= 3 or 4V as shown. 2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table. 3. Gain: Pin= -25dBm 4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. 5. No external matching components used. MCL IN OUT 474-01 DUT TB-471+ Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-471+ (Material: Rogers 4350, Thickness: 0.02”) www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 3 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ TYPICAL PERFORMANCE CURVES I-V (VGS=0.1V PER STEP) (2) NOISE FIGURE vs IDS @ 2 GHz (1) 120 IDS (mA) 100 0.2V 0.3V 0.4V 0.5V NOISE FIGURE (dB) 0.8 80 60 40 20 VDS=3V 0.7 0.6 0.5 0.4 0.3 0.2 0 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VDS (V) 15 20 30 35 40 IDS (mA) 45 50 55 60 55 60 0.8 NOISE FIGURE (dB) F MIN (dB) 25 NOISE FIGURE vs IDS @ 0.9 GHz (1) F Min vs IDS @ 0.9 GHz (3) 0.20 0.19 0.18 0.17 0.16 0.15 0.14 0.13 0.12 VDS=2V 0.11 0.10 VDS=3V VDS=3V 0.7 VDS=4V 0.6 0.5 0.4 0.3 0.2 VDS=4V 0.1 10 15 20 25 30 35 40 IDS (mA) 45 50 55 15 60 20 25 F Min vs IDS @ 2 GHz (3) 0.45 0.43 0.41 0.39 0.37 0.35 0.33 0.31 0.29 0.27 0.25 VDS=2V VDS=3V 10 15 20 25 30 35 40 IDS (mA) 30 35 40 IDS (mA) 45 50 GAIN vs IDS @ 2 GHz (1) VDS=4V GAIN (dB) F MIN (dB) VDS=4V 45 50 55 60 20.0 19.5 19.0 18.5 18.0 17.5 17.0 16.5 16.0 15.5 15.0 14.5 14.0 VDS=3V 10 15 20 25 VDS=4V 30 35 40 IDS (mA) 45 50 55 60 (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure. (4) Drain current was allowed to increase during compression measurement. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 4 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ TYPICAL PERFORMANCE CURVES OIP3 vs IDS @ 2GHz (1) 45 VDS=3V VDS=4V VDS=3V 40 OIP3 (dBm) GAIN (dB) GAIN vs IDS @ 0.9 GHz (1) 25.0 24.5 24.0 23.5 23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 35 30 25 20 15 10 15 20 25 30 35 40 IDS (mA) 45 50 55 60 10 15 20 VDS=3V VDS=4V P1dB (dBm) OIP3 (dBm) 40 35 30 25 20 15 10 15 20 25 30 35 40 IDS (mA) 45 50 55 25 24 23 22 21 20 19 18 17 16 15 10 60 10 15 20 25 VDS=4V 30 35 40 IDS (mA) 45 45 50 55 60 15 20 25 50 55 60 VDS=4V 30 35 40 IDS (mA) 45 NF vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=15mA NOISE FIGURE (dB) VDS=3V 30 35 40 IDS (mA) VDS=3V P1dB vs IDS @ 0.9 GHz (1,4) 25 24 23 22 21 20 19 18 17 16 15 25 P1dB vs IDS @ 2 GHz (1,4) OIP3 vs IDS @ 0.9 GHz (1) 45 P1dB (dBm) VDS=4V 50 55 60 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 -40°C +25°C +85°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure. (4) Drain current was allowed to increase during compression measurement. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 5 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ TYPICAL PERFORMANCE CURVES 32 29 26 23 20 17 14 11 8 5 2 -45°C +25°C OIP3 vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=15mA +85°C OIP3 (dBm) GAIN (dB) GAIN vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=15mA 35 33 31 29 27 25 23 21 19 17 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) -45°C NOISE FIGURE (dB) NF vs FREQUENCY & TEMPERATURE (1) @ VDS=4V, IDS=15mA +25°C +85°C 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 -40°C +25°C +85°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) GAIN vs FREQUENCY & TEMPERATURE (1) @ VDS=4V, IDS=15mA OIP3 vs FREQUENCY & TEMPERATURE (1) @ VDS=4V, IDS=15mA -45°C +25°C +85°C OIP3 (dBm) P1dB (dBm) GAIN (dB) 32 29 26 23 20 17 14 11 8 5 2 -45°C +85°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) P1dB vs FREQUENCY & TEMPERATURE (1,2) @ VDS=3V, IDS=15mA 22 21 20 19 18 17 16 15 14 13 12 +25°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) 35 33 31 29 27 25 23 21 19 17 15 -45°C +25°C +85°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure. (4) Drain current was allowed to increase during compression measurement. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 6 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ TYPICAL PERFORMANCE CURVES 25 24 23 22 21 20 19 18 17 16 15 F Min vs FREQ @ VDS=3V (3) 1.4 1.2 F MIN (dB) P1dB (dBm) P1dB vs FREQUENCY & TEMPERATURE (1,2) @ VDS=4V, IDS=15mA 10 mA 15 mA 20 mA 1.0 0.8 0.6 0.4 -45°C +25°C +85°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure. (4) Drain current was allowed to increase during compression measurement. REFERENCE PLANE LOCATION FOR S AND NOISE PARAMETERS (see data in pages 8-11) (Refer to Application Note AN-60-040) Fig 3. Reference Plane Location Noise parameters were measured over 0.5 to 6 GHz by Modelithics® using a solid state tuner-based noise parameter (NP) test system available from Maury Microwave. F Min, optimimum source reflection coefficient and noise resistance values are calculated values based on a set of measurements made at approximately 16 different impedances. Some data smoothing was applied to arrive at the presented data set. S-parameters were measured by Modelithics® on an Anritsu Lightning vector network analyzer over 0.1 to 18GHz using 350um pitch RF probes from GGB industries combined with customized thru-reflect-line (TRL) calibration standards. The reference plane is at the device package leads, as shown in the picture. www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 7 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ TYPICAL S-PARAMETERS, VDS=3V AND IDS=10 MA (FIG. 3) S11 S21 S12 Mag. Ang. Mag. Mag (dB) Ang. Mag. Ang. Mag. Ang. MSG/MAG (dB) 0.1 1.00 -12.2 14.19 23.04 172.4 0.011 82.7 0.5 0.93 -56.7 12.42 21.88 142.3 0.045 58.6 0.74 -7.85 31.2 0.65 -34.99 0.9 0.84 -91.8 10.06 20.05 119.5 0.067 24.4 40.7 0.53 -55.17 21.8 1.0 0.82 -99.5 9.53 19.58 114.6 1.5 0.75 -130.8 7.37 17.35 94.6 0.070 37.2 0.50 -59.64 21.3 0.082 24.0 0.39 -76.86 1.9 0.72 -150.3 6.14 15.77 19.6 81.6 0.086 16.5 0.33 -88.14 18.6 2.0 0.71 -154.6 5.89 2.5 0.70 -173.7 4.87 15.40 78.7 0.086 14.8 0.31 -90.74 18.3 13.75 65.2 0.090 8.1 0.26 -102.59 3.0 0.69 170.0 17.3 4.14 12.33 53.1 0.092 2.9 0.22 -114.08 16.5 4.0 0.69 5.0 0.71 142.6 3.16 10.00 30.9 0.095 -5.3 0.17 -139.34 15.2 119.4 2.55 8.11 10.3 0.100 -12.6 0.15 -169.48 6.0 13.2 0.73 99.1 2.11 6.49 -9.2 0.107 -19.0 0.16 157.38 11.1 7.0 0.76 81.2 1.78 5.01 -28.0 0.114 -26.3 0.19 127.43 9.8 8.0 0.79 65.0 1.52 3.62 -46.1 0.122 -33.8 0.25 103.16 9.0 9.0 0.83 49.8 1.29 2.23 -63.7 0.130 -42.9 0.32 82.75 8.4 10.0 0.86 35.3 1.10 0.86 -81.0 0.136 -53.0 0.40 64.70 8.4 11.0 0.89 21.8 0.94 -0.53 -97.4 0.141 -63.9 0.48 48.81 8.2 12.0 0.90 9.3 0.81 -1.86 -112.9 0.145 -74.8 0.55 34.57 7.5 13.0 0.92 -2.7 0.70 -3.10 -127.9 0.147 -86.1 0.61 21.82 6.8 14.0 0.93 -13.7 0.61 -4.31 -141.8 0.149 -96.9 0.66 9.90 6.1 15.0 0.94 -22.2 0.51 -5.78 -152.9 0.144 -105.5 0.72 -0.66 5.5 16.0 0.95 -29.7 0.43 -7.39 -162.9 0.135 -113.6 0.77 -10.14 5.0 17.0 0.95 -38.1 0.37 -8.67 -173.4 0.129 -122.1 0.80 -19.83 4.5 18.0 0.94 -47.2 0.32 -9.80 175.6 0.127 -131.4 0.82 -29.34 4.1 TYPICAL NOISE PARAMETERS, VDS=3V A ND IDS=10 MA (FIG. 3) MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY 35 Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) 0.5 0.084 0.38 24.24 0.09 25.8 0.7 0.119 0.39 34.11 0.08 23.9 0.9 0.154 0.41 43.86 0.08 22.2 0 1.0 0.171 0.41 48.68 0.07 21.4 -5 1.9 0.328 0.47 90.69 0.05 16.5 -10 2.0 0.345 0.48 95.20 0.05 16.1 2.4 0.415 0.50 112.92 0.04 14.8 3.0 0.519 0.52 138.54 0.04 13.3 3.9 0.675 0.56 174.83 0.06 11.8 5.0 0.867 0.58 -144.30 0.09 10.7 5.8 1.006 0.58 -116.99 0.14 10.0 6.0 1.041 0.58 -110.48 0.15 9.8 30 MSG/MAG and S21 (dB) S22 Freq. (GHz) MSG/MAG S21(dB) 25 20 15 10 5 -15 0 5 10 Frequency (GHz) Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance 15 20 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 8 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ TYPICAL S-PARAMETERS, VDS=3V AND IDS=15 MA (FIG. 3) S11 S21 S12 Mag. Ang. Mag. Mag (dB) Ang. Mag. Ang. Mag. Ang. MSG/MAG (dB) 0.1 1.00 -13.6 17.40 24.81 171.4 0.011 83.4 0.5 0.91 -62.5 14.72 23.36 139.0 0.042 56.7 0.68 -9.16 32.1 0.58 -40.65 0.9 0.81 -98.9 11.49 21.21 115.8 0.060 25.4 39.5 0.46 -62.99 22.8 1.0 0.79 -106.8 10.81 20.68 111.1 1.5 0.73 -137.6 8.15 18.23 91.7 0.063 36.6 0.43 -67.85 22.3 0.072 25.2 0.32 -86.89 1.9 0.70 -156.3 6.72 16.55 20.5 79.3 0.077 19.2 0.27 -99.60 19.4 2.0 0.69 -160.4 6.44 2.5 0.68 -178.8 5.28 16.17 76.5 0.077 17.9 0.26 -102.70 19.2 14.45 63.6 0.081 12.7 0.21 -116.80 3.0 0.67 165.7 18.1 4.47 13.00 52.0 0.084 8.3 0.18 -130.81 17.2 4.0 0.68 5.0 0.70 139.5 3.39 10.61 30.5 0.092 0.8 0.15 -161.56 15.7 117.1 2.72 8.70 10.6 0.101 -6.6 0.14 165.01 6.0 13.1 0.72 97.4 2.25 7.05 -8.4 0.110 -14.2 0.17 134.79 11.3 7.0 0.76 79.9 1.90 5.56 -26.8 0.120 -22.8 0.21 109.98 10.1 8.0 0.79 64.0 1.62 4.17 -44.4 0.129 -32.1 0.27 90.15 9.2 9.0 0.82 49.1 1.38 2.77 -61.5 0.136 -42.2 0.34 72.63 8.6 10.0 0.86 34.7 1.18 1.42 -78.3 0.142 -53.0 0.42 56.76 8.6 11.0 0.88 21.3 1.01 0.06 -94.4 0.145 -64.1 0.49 42.40 8.4 12.0 0.90 9.0 0.87 -1.21 -109.7 0.148 -75.2 0.55 29.29 7.7 13.0 0.92 -3.0 0.76 -2.38 -124.5 0.150 -86.5 0.61 17.47 7.1 14.0 0.93 -13.9 0.67 -3.50 -138.3 0.151 -97.3 0.66 6.31 6.5 15.0 0.94 -22.5 0.57 -4.88 -149.6 0.145 -106.0 0.71 -3.44 5.9 16.0 0.95 -29.9 0.48 -6.40 -159.6 0.136 -114.0 0.76 -12.29 5.5 17.0 0.95 -38.4 0.42 -7.61 -170.5 0.131 -122.3 0.79 -21.56 5.0 18.0 0.94 -47.6 0.37 -8.64 178.3 0.128 -131.3 0.81 -30.73 4.6 TYPICAL NOISE PARAMETERS, VDS=3V AND IDS=15 MA (FIG. 3) MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY 35 Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) 0.5 0.073 0.38 23.41 0.07 26.4 0.7 0.104 0.39 33.53 0.07 24.4 0.9 0.135 0.40 43.52 0.06 22.7 0 1.0 0.151 0.40 48.46 0.06 21.9 -5 1.9 0.291 0.44 91.46 0.04 17.1 -10 2.0 0.306 0.44 96.07 0.04 16.7 2.4 0.368 0.46 114.17 0.04 15.4 3.0 0.462 0.48 140.33 0.04 13.9 3.9 0.602 0.51 177.31 0.05 12.4 5.0 0.773 0.54 -141.16 0.09 11.1 5.8 0.897 0.56 -113.50 0.13 10.4 6.0 0.928 0.57 -106.92 0.14 10.2 30 MSG/MAG and S21 (dB) S22 Freq. (GHz) MSG/MAG S21(dB) 25 20 15 10 5 -15 0 5 10 Frequency (GHz) Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance 15 20 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 9 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ TYPICAL S-PARAMETERS, VDS=3V AND IDS=20 MA (FIG. 3) S11 S21 S12 Mag. Ang. Mag. Mag (dB) Ang. Mag. Ang. Mag. Ang. MSG/MAG (dB) 0.1 1.00 -14.6 19.72 25.90 170.8 0.010 82.4 0.64 -10.31 33.1 0.5 0.90 -66.4 16.28 24.23 136.8 0.040 56.7 0.53 -44.84 26.1 0.9 0.79 -103.5 12.41 21.87 113.5 0.055 39.8 0.41 -68.82 23.5 1.0 0.77 -111.4 11.61 21.30 108.8 0.058 36.6 0.38 -74.04 23.0 1.5 0.71 -141.8 8.63 18.72 89.9 0.067 26.7 0.29 -94.72 21.1 1.9 0.69 -160.0 7.08 17.00 77.9 0.071 21.3 0.24 -108.79 20.0 2.0 0.68 -164.0 6.76 16.60 75.2 0.072 20.5 0.23 -112.22 19.7 2.5 0.67 178.2 5.53 14.85 62.7 0.077 15.8 0.19 -128.11 18.6 3.0 0.67 163.2 4.66 13.37 51.4 0.082 12.0 0.16 -143.89 17.6 4.0 0.67 137.6 3.54 10.97 30.3 0.091 4.6 0.14 -177.41 15.9 5.0 0.69 115.8 2.83 9.04 10.7 0.101 -3.3 0.15 150.47 13.1 6.0 0.72 96.4 2.34 7.38 -8.0 0.113 -11.8 0.18 123.60 11.4 7.0 0.75 79.1 1.97 5.87 -26.1 0.123 -21.4 0.23 101.71 10.2 8.0 0.79 63.4 1.67 4.47 -43.4 0.133 -31.1 0.29 83.79 9.4 9.0 0.82 48.6 1.43 3.08 -60.2 0.140 -41.8 0.36 67.59 8.7 10.0 0.85 34.3 1.22 1.73 -76.8 0.145 -53.0 0.43 52.50 8.5 11.0 0.88 21.0 1.05 0.40 -92.6 0.148 -64.2 0.50 38.81 8.5 12.0 0.90 8.7 0.91 -0.85 -107.7 0.149 -75.5 0.56 26.25 7.8 13.0 0.92 -3.2 0.80 -1.99 -122.4 0.151 -86.8 0.61 14.83 7.2 14.0 0.93 -14.1 0.70 -3.06 -136.2 0.152 -97.5 0.65 4.04 6.7 15.0 0.94 -22.7 0.60 -4.39 -147.4 0.147 -106.1 0.70 -5.28 6.1 16.0 0.95 -30.1 0.51 -5.85 -157.5 0.137 -114.0 0.75 -13.74 5.7 17.0 0.95 -38.7 0.45 -7.01 -168.4 0.131 -122.4 0.78 -22.81 5.3 18.0 0.94 -47.9 0.40 -7.98 -179.9 0.129 -131.5 0.80 -31.83 4.9 MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY 40 35 MSG/MAG and S21 (dB) S22 Freq. (GHz) TYPICAL NOISE PARAMETERS, VDS=3V AND IDS=20 MA (FIG. 3) MSG/MAG S21(dB) 30 25 20 15 10 5 0 -5 -10 -15 0 5 10 Frequency (GHz) Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance 15 20 Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) 0.5 0.073 0.39 32.95 0.07 27.9 0.7 0.104 0.40 42.06 0.06 25.5 0.9 0.134 0.40 51.08 0.05 23.6 1.0 0.150 0.40 55.57 0.05 22.7 1.9 0.287 0.41 95.05 0.04 17.6 2.0 0.303 0.42 99.33 0.04 17.2 2.4 0.364 0.43 116.29 0.04 15.8 3.0 0.455 0.44 141.14 0.04 14.2 3.9 0.593 0.46 177.08 0.05 12.6 5.0 0.761 0.50 -141.15 0.09 11.3 5.8 0.883 0.53 -112.27 0.13 10.5 6.0 0.914 0.54 -105.24 0.14 10.3 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 10 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ TYPICAL S-PARAMETERS, VDS=4V AND IDS=15 MA (FIG. 3) S11 S21 S22 Mag. Ang. Mag. Mag (dB) Ang. Mag. Ang. Mag. Ang. MSG/MAG (dB) 0.1 1.00 -13.5 17.35 24.79 171.5 0.010 81.4 0.5 0.91 -61.9 14.71 23.35 139.3 0.042 56.8 0.70 -8.89 32.5 0.59 -39.38 0.9 0.81 -98.1 11.52 21.23 116.2 0.059 25.4 40.4 0.47 -60.91 22.9 1.0 0.79 -106.0 10.86 20.71 111.4 1.5 0.73 -136.9 8.20 18.28 91.9 0.062 37.2 0.44 -65.59 22.5 0.071 25.5 0.33 -83.71 1.9 0.70 -155.7 6.76 16.60 20.6 79.5 0.075 19.3 0.27 -95.59 19.5 2.0 0.69 -159.8 6.48 2.5 0.68 -178.2 5.32 16.23 76.7 0.076 18.0 0.26 -98.43 19.3 14.51 63.8 0.080 12.7 0.21 -111.64 3.0 0.67 166.2 18.2 4.50 13.06 52.2 0.083 8.4 0.18 -124.59 17.3 4.0 0.68 5.0 0.70 139.9 3.42 10.69 30.7 0.091 1.0 0.14 -153.64 15.7 117.5 2.75 8.78 10.7 0.099 -6.0 0.13 172.83 6.0 13.2 0.72 97.8 2.28 7.14 -8.3 0.108 -13.5 0.15 140.56 11.4 7.0 0.75 80.2 1.92 5.65 -26.7 0.118 -22.0 0.20 114.24 10.2 8.0 0.79 64.2 1.63 4.26 -44.4 0.127 -31.2 0.26 93.28 9.3 9.0 0.82 49.3 1.39 2.88 -61.6 0.135 -41.1 0.33 75.10 8.8 10.0 0.85 34.9 1.19 1.54 -78.5 0.141 -52.1 0.40 58.79 9.0 11.0 0.88 21.5 1.02 0.19 -94.7 0.145 -63.1 0.48 44.10 8.5 12.0 0.90 9.2 0.88 -1.09 -110.1 0.148 -74.3 0.54 30.76 7.8 13.0 0.92 -2.8 0.77 -2.27 -125.1 0.151 -85.7 0.60 18.78 7.1 14.0 0.93 -13.8 0.68 -3.41 -139.0 0.152 -96.6 0.65 7.47 6.5 15.0 0.94 -22.4 0.58 -4.81 -150.4 0.146 -105.3 0.71 -2.48 5.9 16.0 0.95 -29.8 0.48 -6.35 -160.6 0.137 -113.2 0.76 -11.45 5.5 17.0 0.95 -38.3 0.42 -7.57 -171.5 0.131 -121.7 0.79 -20.84 5.0 18.0 0.95 -47.5 0.37 -8.63 177.3 0.129 -130.7 0.81 -30.07 4.6 TYPICAL NOISE PARAMETERS, VDS=4V AND IDS=15 MA (FIG. 3) MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) 0.5 0.072 0.39 24.88 0.08 26.6 0.7 0.103 0.39 34.47 0.07 24.6 0.9 0.134 0.40 43.97 0.06 22.8 1.0 0.149 0.41 48.68 0.06 22.0 0 1.9 0.287 0.44 89.97 0.04 17.0 -5 2.0 0.302 0.44 94.44 0.04 16.6 2.4 0.363 0.45 112.05 0.04 15.3 3.0 0.455 0.47 137.73 0.04 13.8 3.9 0.592 0.49 174.57 0.05 12.3 5.0 0.761 0.51 -143.11 0.09 11.1 5.8 0.883 0.53 -114.21 0.13 10.3 6.0 0.914 0.53 -107.23 0.14 10.1 35 MSG/MAG S21(dB) 30 MSG/MAG and S21 (dB) S12 Freq. (GHz) 25 20 15 10 5 -10 -15 0 5 10 Frequency (GHz) Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance 15 20 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 11 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ RECOMMENDED APPLICATION CIRCUIT Vcc (+5V DC) DC BIAS CIRCUIT R1 R3 Q1 R4 Q2 R2 RF CIRCUIT DRAIN L2 L1 INPUT MATCHING CIRCUIT (MUST PASS DC) RF-IN C1 GATE SOURCE OUTPUT MATCHING CIRCUIT (MUST PASS DC) RF-OUT C2 DUT VDS, V (nom) 3 4 IDS, mA (nom) 15mA 15mA R1 4320Ω 4320Ω R2 4320Ω 4320Ω R3 3570Ω 1210Ω R4 133Ω 68.1Ω Q1 MMBT3906* MMBT3906* Q2 MMBT3906* MMBT3906* C1 0.01µF 0.01µF C2 0.01µF 0.01µF L1** 840nH 840nH L2** 840nH 840nH OPTIMIZED AMPLIFIER CIRCUITS For band specific, drop-in modules, and as an alternative to designing circuits, please refer to Mini-Circuits TAMP and RAMP series models which are based upon SAV/TAV E-PHEMT’s and include all DC blocking, bias, matching and stabilization circuitry, without need for any external components. *Fairchild Semiconductor™ part number **Piconics™ part number CC45T47K240G5 PRODUCT MARKING 55 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 12 OF 13 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor SAV-551+ ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS C LIC K HERE Data Table Performance Data Swept Graphs Performance data, graphs, s-parameter data set (.zip file) Case Style MMM1362 Plastic molded SOT-343 (SC-70) style package, lead finish: matte tin Tape & Reel Standard quantities available on reel F90 Standard quantities availabe on reel: 7” reels with 20, 50, 100, 200, 500, 1K, 2K, or 3K devices. Suggested Layout for PCB Design PL-300 Evaluation Board TB-471+ Environmental Ratings ENV08T2 ESD RATING Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999 MSL RATING Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D MSL TEST FLOW CHART Start Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles 260°C Soak 85°C/85RH 168 hours Bake at 125°C, 24 hours Visual Inspection Electrical Test SAM Analysis Finish NOTES A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the standard. Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 13 OF 13