TAV-581+

Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +31 dBm • Output Power at 1dB comp., +19 dBm • Low Current, 30mA • Wide bandwidth • External biasing and matching required Generic photo used for illustration purposes only TAV-581+ CASE STYLE: FG873 +RoHS Compliant Typical Applications The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications • Cellular • ISM • GSM • WCDMA • WiMax • WLAN • UNII and HIPERLAN General Description TAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. simplified schematic and pin description DRAIN G AT E GATE S OUR C E S OUR C E SOURCE DR AIN Function Pad Number Source 2&4 Description Gate 3 Gate used for RF input Drain 1 Drain used for RF output Source terminal, normally connected to ground * Enhancement mode Pseudomorphic High Electron Mobility Transistor. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com REV. C M151107 ED-13285 TAV-581+ 201016 Page 1 of 11 TAV-581+ E-PHEMT Electrical Specifications at TAMB=25°C, Frequency 0.45 to 6 GHz Symbol Parameter Condition Min. Typ. Max. Units V DC Specifications VGS Operational Gate Voltage VDS=3V, IDS=30 mA 0.28 0.39 0.5 VTH Threshold Voltage VDS=3V, IDS=4 mA 0.18 0.26 0.38 V IDSS Saturated Drain Current VDS=3V, VGS=0 V 1.0 5.0 µA GM Transconductance VDS=3V, Gm=∆ IDS/∆VGS ∆VGS=VGS1-VGS2 VGS1=VGS at IDS=30 mA VGS2=VGS1+0.05V — — 327 — — — — 560 — — mS IGSS Gate leakage Current VGD=VGS=-3V 200 µA 0.4 0.5 0.9 1.5 — 0.9 — — dB — — 230 — — RF Specifications, Z0=50 Ohms (Figure 1) NF(1) Noise Figure VDS=3V, IDS=30 mA f=0.9 GHz f=2.0 GHz f=3.9 GHz f=5.8 GHz VDS=4V, IDS=30 mA VDS=3V, IDS=30 mA Gain Gain VDS=4V, IDS=30 mA VDS=3V, IDS=30 mA OIP3 Output IP3 VDS=4V, IDS=30 mA VDS=3V, IDS=30 mA P1dB(2) Power output at 1 dB Compression VDS=4V, IDS=30 mA f=0.9 GHz — 0.4 — f=2.0 GHz f=0.9 GHz f=2.0 GHz f=3.9 GHz f=5.8 GHz — — 15.0 — — 0.5 22.9 17.3 12.1 8.8 — — 18.5 — — dB f=0.9 GHz 22.7 f=2.0 GHz 17.2 f=0.9 GHz f=2.0 GHz f=3.9 GHz f=5.8 GHz 28.3 30.3 33.0 34.7 dBm f=0.9 GHz f=2.0 GHz f=0.9 GHz f=2.0 GHz f=3.9 GHz f=5.8 GHz 28.1 30.0 17.8 18.3 18.8 19.1 dBm f=0.9 GHz f=2.0 GHz 19.4 20.2 Absolute Maximum Ratings(3) Symbol VDS(4) VGS(4) VGD(4) IDS(4) IGS PDISS PIN(5) TCH TOP TSTD ΘJC Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Gate Current Total Dissipated Power RF Input Power Channel Temperature Operating Temperature Storage Temperature Thermal Resistance Max. Units 5 -5 to 0.7 -5 to 0.7 100 2 550 17 150 -40 to 85 -65 to 150 112 V V V mA mA mW dBm °C °C °C °C/W Notes: (1) Includes testboard loss (measured in Mini-Circuits test board TB-154) (2) During Compression, IDS increases to 48mA typ. (3) Operation of this device above any one of these parameters may cause permanent damage. (4) Assumes DC quiescent conditions. (5) IGS is limited to 2 mA during test. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 2 of 11 TAV-581+ E-PHEMT Characterization Test Circuit Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-154) Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24. Noise Figure measured using Agilent’s Noise Figure meter N8975A and noise source N4000A. Conditions: 1. Drain voltage (with reference to source, VDS)= 3 or 4V as shown. 2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table. 3. Gain: Pin= -25dBm 4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. 5. No external matching components used. Fig 2. Test Board used for characterization, Mini-Circuits P/N TB-154 (Material: Rogers 4350, Thickness: 0.02”) Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 3 of 11 TAV-581+ E-PHEMT Typical Performance Curves I-V (VGS=0.1V PER STEP) (2) NOISE FIGURE vs IDS @ 2 GHz (1) 0.8 0.2V IDS (mA) 100 80 0.3V 60 0.4V 40 0.5V 20 0.6V 0.7 NOISE FIGURE (dB) 120 VDS=3V 0.5 0.4 0.3 0.2 0.1 0 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VDS (V) NOISE FIGURE vs IDS @ 0.9 GHz (1) 0.20 0.19 0.18 0.17 0.16 0.15 0.14 0.13 0.12 0.11 0.10 0.8 NOISE FIGURE (dB) F MIN (dB) F Min vs IDS @ 0.9 GHz (3) VDS=2V VDS=3V VDS=4V VDS=3V 0.7 0.6 0.5 0.4 0.3 0.1 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) F Min vs IDS @ 2 GHz (3) VDS=2V VDS 4V GAIN vs IDS @ 2 GHz (1) VDS=3V GAIN (dB) 0.45 0.43 0.41 0.39 0.37 0.35 0.33 0.31 0.29 0.27 0.25 VDS=4V 0.2 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) F MIN (dB) VDS=4V 0.6 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) 20.0 19.5 19.0 18.5 18.0 17.5 17.0 16.5 16.0 15.5 15.0 14.5 14.0 VDS=3V VDS=4V 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure. (4) Drain current was allowed to increase during compression measurement. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 4 of 11 TAV-581+ E-PHEMT OIP3 vs IDS @ 2GHz (1) 45 VDS=3V VDS=4V VDS=3V 40 OIP3 (dBm) GAIN (dB) GAIN vs IDS @ 0.9 GHz (1) 25.0 24.5 24.0 23.5 23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 35 30 25 20 15 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) P1dB vs IDS @ 2 GHz (1,4) OIP3 vs IDS @ 0.9 GHz (1) 25 45 VDS=3V VDS=4V 24 35 30 25 21 20 19 16 15 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) P1dB vs IDS @ 0.9 GHz (1,4) NF vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=30mA VDS=3V 3.0 VDS=4V NOISE FIGURE (dBm) P1dB (dBm) 22 17 15 23 22 21 20 VDS=4V 18 20 25 24 VDS=3V 23 P1dB (dBm) OIP3 (dBm) 40 VDS=4V 19 18 17 16 15 2.5 -40°C +25°C +85°C 2.0 1.5 1.0 0.5 0.0 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 IDS (mA) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure. (4) Drain current was allowed to increase during compression measurement. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 5 of 11 TAV-581+ E-PHEMT 32 29 26 23 20 17 14 11 8 5 2 -45°C +25°C OIP3 vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=30mA +85°C OIP3 (dBm) GAIN (dB) GAIN vs FREQUENCY & TEMPERATURE (1) @ VDS=3V, IDS=30mA 45 43 41 39 37 35 33 31 29 27 25 -45°C NF vs FREQUENCY & TEMPERATURE (1) @ VDS=4V, IDS=30mA P1dB vs FREQUENCY & TEMPERATURE (1,4) @ VDS=3V, IDS=30mA 3.0 P1dB (dBm) -45°C +25°C NOISE FIGURE (dBm) 22 +85°C 20 19 18 17 16 -40°C 2.5 +25°C +85°C 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) GAIN vs FREQUENCY & TEMPERATURE (1) @ VDS=4V, IDS=30mA OIP3 vs FREQUENCY & TEMPERATURE @ VDS=4V, IDS=30mA -45°C +25°C +85°C OIP3 (dBm) GAIN (dB) 15 32 29 26 23 20 17 14 11 8 5 2 +85°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) 21 +25°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) 45 43 41 39 37 35 33 31 29 27 25 -45°C +25°C +85°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure. (4) Drain current was allowed to increase during compression measurement. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 6 of 11 TAV-581+ E-PHEMT 25 24 23 22 21 20 19 18 17 16 15 F Min vs FREQ @ VDS=3V (3) 1.4 20 mA 1.2 30 mA 40 mA 1.0 F MIN (dB) P1dB (dBm) P1dB vs FREQUENCY & TEMPERATURE (1,4) @ VDS=4V, IDS=30mA 0.8 0.6 0.4 -45°C +25°C 0.2 +85°C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) (1) Includes test board loss, set-up and conditions per Figure 1. (2) Measured using HP4155B semiconductor parameter analyzer. (3) F Min is minimum Noise Figure. (4) Drain current was allowed to increase during compression measurement. Reference Plane Location for S and Noise Parameters (see data in pages 8 & 9) (Refer to Application Note AN-60-040) Fig 3. Reference Plane Location Notes: Noise parameters were measured over 0.5 to 6 GHz by Modelithics® using a solid state tuner-based NP noise parameter test system available from Maury Microwave. F Min, optimimum source reflection coefficient and noise resistance values are calculated values based on a set of measurements made at approximately 16 different impedances. Some data smoothing was applied to arrive at the presented data set. S-parameters were measured by Modelithics® on an Anritsu Lightning vector network analyzer over 0.1 to 18GHz using 350um pitch RF probes from GGB industries combined with customized thru-reflect-line (TRL) calibration standards. The reference plane is at the device package leads, as shown in the picture. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 7 of 11 TAV-581+ E-PHEMT Typical S-parameters, VDS=3V and IDS=30 mA (Fig. 3) S11 Freq. (GHz) Mag. 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S21 Ang. Mag. 0.99 -16.36 0.88 -73.63 0.77 -112.16 0.76 -120.13 0.70 -149.97 0.68 -167.63 0.68 -171.42 0.67 171.27 0.66 156.22 0.67 130.42 0.68 107.77 0.70 86.82 0.73 66.89 0.75 47.68 0.79 28.73 0.83 9.67 0.86 -8.89 0.89 -26.76 0.91 -44.42 0.93 -60.99 0.94 -73.61 0.96 -83.75 0.96 -94.86 0.95 -106.68 S12 Mag (dB) Ang. Mag. 23.19 27.31 169.5 18.30 25.25 132.3 13.45 22.57 108.1 12.51 21.95 103.4 9.11 19.19 84.2 7.42 17.41 72.0 7.09 17.02 69.3 5.80 15.27 56.2 4.90 13.80 44.0 3.73 11.43 21.4 3.02 9.59 0.0 2.53 8.06 -20.8 2.17 6.71 -41.4 1.88 5.49 -61.7 1.63 4.27 -81.9 1.42 3.04 -102.2 1.23 1.77 -122.3 1.06 0.47 -142.1 0.91 -0.86 -162.0 0.77 -2.25 178.8 0.66 -3.64 163.1 0.56 -5.10 149.1 0.47 -6.51 134.2 0.40 -7.98 118.5 S22 Ang. Mag. 0.009 86.4 0.037 52.2 0.05 36.6 0.052 34.2 0.059 24.0 0.063 19.5 0.065 18.2 0.07 13.5 0.075 8.8 0.087 -0.3 0.099 -10.8 0.113 -22.5 0.125 -35.2 0.136 -48.6 0.145 -63.3 0.15 -78.4 0.151 -94.0 0.15 -109.6 0.146 -125.5 0.139 -140.9 0.131 -153.9 0.119 -163.5 0.109 -174.6 0.101 174.5 Ang. MSG/MAG (dB) 0.60 -12.94 0.47 -52.76 0.35 -79.99 0.33 -85.89 0.25 -109.19 0.21 -124.99 0.20 -128.70 0.17 -146.31 0.15 -163.82 0.13 161.15 0.14 127.97 0.16 98.63 0.20 74.15 0.26 53.20 0.32 34.25 0.39 16.29 0.47 -0.68 0.54 -17.06 0.59 -33.39 0.65 -49.07 0.70 -61.42 0.74 -72.07 0.77 -83.99 0.80 -97.27 34.0 27.0 24.3 23.8 21.9 20.7 20.4 19.2 18.1 16.0 13.2 11.7 10.6 9.7 9.1 8.8 9.1 8.5 7.9 7.5 7.0 6.7 6.4 6.0 MSG/MAG and S21 (dB) MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY 40 35 30 25 20 15 10 5 0 -5 -10 -15 MSG/MAG S21(dB) 0 5 10 Frequency (GHz) 15 20 Typical Noise Parameters, VDS=3V and IDS=30 mA (Fig. 3) Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) 0.5 0.09 0.33 16.30 0.07 26.6 0.7 0.12 0.33 28.96 0.07 24.7 0.9 0.16 0.34 41.34 0.06 23.1 1.0 0.18 0.35 47.42 0.06 22.4 1.9 0.34 0.38 99.05 0.03 17.8 2.0 0.36 0.39 104.44 0.03 17.5 2.4 0.43 0.40 125.31 0.03 16.3 3.0 0.54 0.42 154.52 0.03 14.9 3.9 0.70 0.44 -166.36 0.06 13.3 5.0 0.89 0.46 -126.19 0.11 11.8 5.8 1.04 0.47 -102.25 0.16 10.7 6.0 1.07 0.47 -96.96 0.18 10.5 Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 8 of 11 TAV-581+ E-PHEMT Typical S-parameters, VDS=4V and IDS=30 mA (Fig. 3) S11 Freq. (GHz) Mag. 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S21 Ang. Mag. 0.99 -16.62 0.88 -73.31 0.77 -111.77 0.76 -119.67 0.70 -149.65 0.68 -167.34 0.67 -171.13 0.67 171.46 0.66 156.41 0.67 130.52 0.68 107.77 0.70 86.77 0.72 66.87 0.75 47.72 0.79 28.73 0.83 9.64 0.86 -8.92 0.89 -26.90 0.91 -44.62 0.93 -61.40 0.94 -74.24 0.96 -84.49 0.96 -95.82 0.96 -107.81 S12 Mag (dB) Ang. Mag. 23.16 27.30 169.5 18.36 25.28 132.5 13.51 22.61 108.3 12.58 21.99 103.5 9.17 19.25 84.3 7.47 17.47 72.1 7.14 17.07 69.3 5.84 15.33 56.2 4.93 13.86 44.0 3.75 11.49 21.4 3.04 9.66 -0.1 2.55 8.14 -20.9 2.19 6.79 -41.6 1.90 5.58 -61.9 1.65 4.37 -82.2 1.44 3.15 -102.6 1.24 1.89 -122.9 1.07 0.60 -142.8 0.92 -0.73 -162.9 0.78 -2.11 177.7 0.67 -3.52 161.7 0.56 -4.99 147.6 0.48 -6.42 132.4 0.40 -7.93 116.4 S22 Ang. Mag. 0.009 79.4 0.036 52.2 0.049 37.1 0.051 33.7 0.058 24.1 0.062 19.2 0.063 18.4 0.069 13.6 0.074 9.0 0.085 0.0 0.098 -10.3 0.111 -21.6 0.123 -34.4 0.135 -47.6 0.144 -62.3 0.15 -77.4 0.152 -93.0 0.151 -108.5 0.147 -124.8 0.14 -140.4 0.132 -153.4 0.121 -163.2 0.111 -174.6 0.102 174.8 Ang. MSG/MAG (dB) 0.61 -12.06 0.49 -50.89 0.36 -76.91 0.34 -82.55 0.25 -104.45 0.21 -119.17 0.20 -122.66 0.17 -139.21 0.14 -155.97 0.12 169.62 0.12 134.56 0.14 103.32 0.18 77.45 0.24 55.67 0.30 36.33 0.38 18.12 0.45 0.90 0.52 -15.63 0.58 -32.08 0.64 -47.96 0.69 -60.57 0.74 -71.29 0.77 -83.45 0.80 -96.97 34.0 27.0 24.4 23.9 22.0 20.8 20.5 19.3 18.2 15.9 13.3 11.8 10.7 9.8 9.3 9.1 9.1 8.5 8.0 7.5 7.0 6.7 6.4 5.9 MSG/MAG and S21 (dB) MAXIMUM STABLE GAIN (MSG)/MAXIMUM AVAILABLE GAIN (MAG) vs. FREQUENCY 40 35 30 25 20 15 10 5 0 -5 -10 -15 MSG/MAG S21(dB) 0 5 10 Frequency (GHz) 15 20 Typical Noise Parameters, VDS=4V and IDS=30 mA (Fig. 3) Freq. (GHz) F Min. (dB) GOpt (Magnitude) GOpt (Angle) Rn/50 Ga Associated Gain (dB) 0.5 0.09 0.37 16.12 0.08 26.6 0.7 0.12 0.37 28.50 0.07 24.6 0.9 0.16 0.37 40.63 0.06 23.0 1.0 0.18 0.37 46.59 0.06 22.3 1.9 0.34 0.39 97.42 0.03 17.8 2.0 0.35 0.39 102.75 0.03 17.4 2.4 0.42 0.40 123.43 0.03 16.3 3.0 0.53 0.41 152.52 0.03 14.9 3.9 0.69 0.43 -168.14 0.05 13.3 5.0 0.89 0.45 -127.09 0.10 11.8 5.8 1.03 0.46 -102.09 0.16 10.8 6.0 1.06 0.47 -96.48 0.18 10.6 Notes: F Min.: Minimum Noise Figure GOpt: Optimum Source Reflection Coefficient Rn: Equivalent noise resistance Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 9 of 11 TAV-581+ E-PHEMT Product Marking White Ink Marking MCL 58 YYWW Body (Black) Additional Detailed Technical Information Additional information is available on our web site www.minicircuits.com. To access this information enter the model number on our web site home page. Performance data, graphs, s-parameter data set (.zip file) Case Style: FG873 Plastic low profile 3mm x 3mm, lead finish: tin/silver/nickel Suggested Layout for PCB Design: PL-301 Tape & Reel: F68 Characterization Test Board: TB-154+ Environmental Ratings: ENV08T2 ESD Rating Human Body Model (HBM): Class 1A (250 V to < 500 V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (40 V) in accordance with ANSI/ESD STM 5.2 - 1999 MSL Rating Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020D MSL Test Flow Chart Start Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles, 260°C Soak 85°C/85RH 168 hours Bake at 125°C, 24 hours Visual Inspection Electrical Test SAM Analysis Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 10 of 11 TAV-581+ E-PHEMT Recommended Application Circuit Vcc (+5V DC) DC BIAS CIRCUIT R1 R3 Q1 R4 Q2 R2 RF CIRCUIT DRAIN L1 RF-IN C1 L2 INPUT MATCHING CIRCUIT (MUST PASS DC) OUTPUT MATCHING CIRCUIT (MUST PASS DC) GATE RF-OUT C2 SOURCE DUT VDS, V (nom) 3 4 IDS, mA (nom) 30mA 30mA R1 4320Ω 4320Ω R2 4320Ω 4320Ω R3 3570Ω 1210Ω R4 68.1Ω 33.2Ω Q1 MMBT3906* MMBT3906* Q2 MMBT3906* MMBT3906* C1 0.01µF 0.01µF C2 0.01µF 0.01µF L1** 840nH 840nH L2** 840nH 840nH * Fairchild Semiconductor™ part number ** Piconics™ part number CC45T47K240G5 Optimized Amplifier Circuits For band specific, drop-in modules, and as an alternative to designing circuits, please refer to Mini-Circuits TAMP and RAMP series models which are based upon SAV/TAV E-PHEMT’s and include all DC blocking, bias, matching and stabilization circuitry, without need for any external components. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 11 of 11