WIDEBAND
Low Noise Bypass Amplifier TSS-53LNB3+
50Ω
0.5 to 5 GHz
THE BIG DEAL
y Wideband: 0.5-5 GHz
y Built-in Bypass switching
y Low Noise figure: 1.5 dB typ. at 2.0 GHz
y High Gain: 18.4 dB typ. at 2 GHz
y Ultra Flat Gain: 0.7 dB from 0.7 to 2.1 GHz
y P1dB: +15.1 dBm typ. at 2.0 GHz
y Minimal matching components
y Specified over full band operation
Generic photo used for illustration purposes only
CASE STYLE: DQ1225
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
APPLICATIONS
y Wireless Base Station Systems
y Test and Measurement Systems
y Multi-Band Receivers
PRODUCT OVERVIEW
Mini-Circuits TSS-53LNB3+ is a low-noise amplifier offering industry-leading performance over its full frequency range from 500
MHz to 5 GHz. It contains internal switching, allowing the user control of the amplifier to handle both high and low signal levels
by bypassing the LNA in the presence of large signals. The TSS-53LNB3+ utilizes E-PHEMT technology to achieve excellent
noise figure performance in a unique cascade configuration enabling the combination of very wide band performance and flat
gain. This model comes in a tiny, 3 x 3mm, 12-lead MCLP package.
KEY FEATURES
Feature
Advantages
Ultra-wideband: 500 MHz – 5 GHz
Ideal for a wide range of receiver applications including military, commercial wireless, and instrumentation.
Very flat gain
Ideal for broadband or multi-band applications. Just one, cost-efficient model required for multiple frequency
usage.
Minimal external matching components
required.
15 dB return loss typ.
Minimizes the need for external matching networks, simplifying circuit designs, and enabling the amplifier to
operate over multiple bands in a single application circuit.
Internal bypass switch feature
Unique design handles low to high signal levels with minimal noise distortion.
Built-in DC blocking cap at RF-Out port &
separate pads for RF-Out & Vdd
Simplifies biasing eliminates need for Bias-Tee at output.
Compact size: 3 x 3 x 0.9 mm
Saves space in dense system layouts. Low inductance, repeatable transitions, and excellent thermal contact.
REV. A
ECO-011809
TSS-53LNB3+
TH/RS/CP
220128
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 1 OF 5
WIDEBAND
Low Noise Bypass Amplifier TSS-53LNB3+
ELECTRICAL SPECIFICATIONS1 AT 25°C, ZO=50Ω AND VDD=3V, UNLESS OTHERWISE NOTED
Parameter
Condition
(GHz)
Frequency Range
Noise Figure
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Output Power @1dB compression AMP-ON2
Input Power @1dB compression AMP-Bypass2
Output IP3
Device Operating Voltage (Vdd)
Device Operating Current (Id)
Enable Voltage (Ve)
Enable Control Current (Ie)
DC Current (Id) Variation Vs. Temperature3
DC Current (Id) Variation Vs. Voltage
Thermal Resistance, junction-to-ground lead
Min.
Typ.
0.5
0.5
1.0
2.0
3.0
4.0
5.0
0.5
1.0
2.0
3.0
4.0
5.0
0.7 - 2.1
0.5
1.0
2.0
3.0
4.0
5.0
0.5
1.0
2.0
3.0
4.0
5.0
0.5
1.0
2.0
3.0
4.0
5.0
0.5
1.0
2.0
3.0
4.0
5.0
AmplifierBypass
Amplifier-ON
—
—
16.5
—
—
—
—
—
—
—
—
—
2.7
Max.
5.0
1.3
1.3
1.5
1.6
1.7
1.8
19.5
19.3
18.4
17.2
16.1
14.8
±0.7
16.6
16.6
12.4
9.8
10.1
11.3
18.5
18.3
18.8
12.9
10.2
6.5
13.6
14.8
14.9
14.7
14.7
13.9
25.2
24.5
24.8
23.6
23.8
20.7
3
42
3
2.0
-19
0.008
60
—
—
20.2
—
—
—
3.3
Units
Typ.
GHz
—
—
—
—
—
—
-0.8
-0.8
-1.1
-1.3
-1.6
-1.7
±0.2
24.3
19.0
13.4
12.5
10.6
11.3
24.1
17.7
13.2
13.5
11.5
10.6
28
—
29
—
—
29
28.7
20.7
26.6
28.3
29.2
30.1
3
2
0
0
—
—
—
dB
dB
dB
dB
dB
dBm
dBm
V
mA
V
mA
µA/°C
mA/mV
°C/W
1. Measured on Mini-Circuits Characterization test board TB-780+. See Characterization Test Circuit (Fig. 1)
2. Current increases at P1dB
3. (Current at 85°C - Current at -45°C)/130)
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 2 OF 5
WIDEBAND
Low Noise Bypass Amplifier TSS-53LNB3+
MAXIMUM RATINGS4
CONTROL VOLTAGE (VE) FIG. 1
Parameter
Ratings
Operating Temperature (ground lead)
Storage Temperature
Amplifier-Bypass
-65°C to 150°C
Total Power Dissipation
Min.
Typ.
Max.
Units
2.7
3.0
3.3
V
0
—
0.5
V
0.7 W
Amplifier-ON
Input Power
Amplifier-ON
-40°C to 85°C
8 dBm (continuous), 19 dBm (5 min max.)
Amplifier Bypass
16 dBm (continuous), 29 dBm (5 min max.)
DC Voltage Vdd
7.0 V
DC Voltage Enable
7.0 V
Max. Voltage on pad 8
15 V
5. Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
SWITCHING SPECIFICATIONS (RISE/FALL TIME)
Parameter
Amplifier ON to Bypass
Amplifier Bypass to ON
Min.
Typ.
Max.
OFF TIME (50% Control to 10% RF)
—
55*
—
FALL TIME (90 to 10% RF)
—
34
—
ON TIME (50% Control to 90% RF)
—
960*
—
RISE TIME (10% to 90% RF)
—
240
—
—
65
—
Control Voltage Leakage
Units
ns
ns
mV
* Measured with ±25nS uncertainty
SIMPLIFIED SCHEMATIC AND BONDING PAD DESCRIPTION
Control
Current
12
TOP VIEW
Vdd
9
12
RF-IN
2
8
RF-OUT
1,3,4,5,6,7,10
& Paddle
11
Voltage
Enable
GND
1
RF-IN
2
GND
3
11
10
Paddle
(Ground)
4
5
Vdd
9
8
RF-OUT
7
GND
6
GND GND GND
Function
Pad Number
Description (See Figure 2)
RF-IN
2
RF-Input pad. Connect to Ground Via L1. Add a DC blocking cap in series of appropriate value if required.
RF-OUT
8
RF-Output pad. No external DC blocking cap required.
Current Control
12
Control Current pad, voltage level on this pad sets the Idd. Connect to pad 11 via 3.92 kΩ resistor.
Voltage Enable
11
Voltage Enable Pad. Voltage level on this pad determines Amplifier is ON or bypassed.
Vdd
9
Ground
1,3,4,5,6,7,10 & Paddle
Supply Voltage Pad. Connect to Vdd via L2.
Connect to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path
inductance for best performance.
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 3 OF 5
WIDEBAND
Low Noise Bypass Amplifier TSS-53LNB3+
CHARACTERIZATION TEST CIRCUIT
Voltage Enable (Ve)
(Bypass)
R1
12
11
DUT 9
Bias
2
RF-IN
L2
Vdd
C2
C1
8
RF-OUT
L1
1,3,4,5,6,7,10
& Paddle
Component
Size
Value
Units
L1
0402
47
nH
L2
0402
56
nH
C1
0402
0.1
µF
C2
0402
10
pF
R1
0402
3.92
KΩ
Fig 1. Block diagram of Test Circuit used for characterization. (DUT soldered on
Mini-Circuits Characterization test board TB-780+)
Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3)
and noise figure measured using Agilent’s N5242A PNA-X microwave network
analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
3. Switching Time: Pin=-25 dBm at 500 MHz. Venable=3V at 10 kHz. Vd=3V.
TB-780+
RECOMMENDED APPLICATION CIRCUIT
Schmitt Trigger
(Optional)
Vdd
Voltage
Enable
L2
C2
C1
R1
12
11
RF-IN C3
2
L1
9
DUT
RF-OUT
8
Component
Size
Value
Units
L1
0402
47
nH
L2
0402
56
nH
R1
0402
3.92
kΩ
C1
0402
0.1
µF
C2
0402
10
pF
C3
0402
1000
pF
Schmitt
Trigger
SN74LVC2G17DCKR
Texas Instruments
—
Fig 2. Recommended Application Circuit.
1,3,4,5,6,7,10 &
Paddle
PRODUCT MARKING
Index over pin
MCL
TSS53
Black body
Model family designation
Marking may contain other features or characters for internal lot control
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
PAGE 4 OF 5
WIDEBAND
Low Noise Bypass Amplifier TSS-53LNB3+
ADDITIONAL DETAILED TECHNICAL INFORMATION IS AVAILABLE ON OUR DASH BOARD. TO ACCESS
Performance Data
Data Table
Swept Graphs
S-Parameter (S2P Files) Data Set (.zip file)
Case Style
DQ1225
Plastic package, exposed paddle lead finish: Matte-Tin
Tape & Reel
Standard quantities available on reel
F66
7” reels with 20, 50, 100, 200, 500, 1K, or 2K devices
Suggested Layout for PCB Design
PL-421
Evaluation Board
TB-779+
Environmental Ratings
ENV12
C LIC K HERE
ESD RATING
Human Body Model (HBM): Class 1A (250 to
