CMOS NAND Gate And NOR Gate Operating Voltage Range : 2V ~ 5.5V High Speed Operation MSOP-8A Package : tpd = 2.6ns TYP Low Power Consumption : 1µA (max)
■Applications
Palmtops Digital Equipment
■Description
ML74WLABSRG comprises of CMOS NAND gate and NOR gate, manufactured using silicon gate CMOS processes. The small quiescent current, which is one of the features of the CMOS logic, gives way to high speed operations which enables LS-TTL. With wave forming buffers connected internally, stabilized output can be achieved as the series offers high noise immunity. As the series is integrated into a mini molded, MSOP-8A package, high density mounting is possible.
■Features
High Speed Operation : tpd = 2.6ns TYP (Vcc=5V) Operating Voltage Range: 2V ~ 5.5V Low Power Consumption: 1µA (max) Small Package : MSOP-8A
■Pin Configuration
■Function
NAND GATE
INPUT A H H L L
NOR GATE
B H L H L
OUTPUT Y L H H H
INPUT A H H L L
H=High level L=Low level Ta=-40°C~85°C
B H L H L
OUTPUT Y L L L H
■ Absolute Maximum Ratings
PARAMETER SYMBOL RATINGS UNITS
V V V mA mA mA mA mW °C
Power Supply Voltage Vcc -0.5 ~ +6.0 Input voltage VIN -0.5 ~ +6.0 Output Voltage VOUT -0.5 ~ Vcc +0.5 Input Diode Current IIK ±20 Output Diode current IOK ±20 Switch Output Current IOUT ±25 Vcc, GND Current ICC, IGND ±50 Power Dissipation (Ta=25°C) Pd 300 Storage Temperature Tstg -65 ~ +150 Note: Voltage is all Ground standardized.
Rev. B, Sep 2005
■Recommended Operating Conditions
PARAMETER Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise / Fall Time SYMBOL Vcc VIN VOUT Topr tr, tf CONDITIONS 2 ~ 5.5 0 ~ 5.5 0 ~ Vcc -40 ~ +85 0 ~ 200 (Vcc=3.3V) 0 ~ 100 (Vcc=5V) UNITS V V V °C ns
■DC Electrical Characteristics
PARAMETER SYMBOL Vcc(V) CONDITIONS MIN 1.5 2.1 3.85 1.9 2.9 4.4 2.58 3.94 -0.1 Ta=25°C Ta=-40~85°C TYP MAX MIN M AX 1.5 2.1 3.85 0.5 0.5 0.9 0.9 1.65 1.65 2.0 1.9 3.0 2.9 4.5 4.4 2.48 3.80 0.1 0.1 0.1 0.1 0.1 0.1 0.36 0.44 0.36 0.44 0.1 -1.0 1.0 1.0 10.0 UNITS
VIH Input Voltage VIL
VOH
Output Voltage
VOL
Input Current Quiescent Supply Current
IIN Icc
2.0 3.0 5.5 2.0 3.0 5.5 2.0 IOH=-50µA 3.0 4.5 VIN=VIH or VIL 3.0 IOH=-4mA 4.5 IOH=-8mA 2.0 IOL=50µA 3.0 VIN=VIH 4.5 3.0 IOL =4mA 4.5 IOL =8mA 0~5.5 VIN=Vcc or GND 5.5 VIN=Vcc or GND, IOUT=0µA
V
V
V
V
µA µA
■Switching Electrical Characteristics
Tr=tf=3ns PARAMETER SYMBOL CL 15pF Vcc(V) CONDITIONS Ta=25°C Ta=-40~85°C MIN TYP M AX MIN M AX 3.7 7.9 1 9.5 2.7 5.5 1 6.5 5.4 11.4 1 13 3.6 7.5 1 8.5 3.3 7.9 1 9.5 2.5 5.5 1 6.5 4.6 11.4 1 13 7.5 1 8.5 3.5 2 10 1 10 9.3 UNITS ns ns ns ns pF pF
tPLH Propagation Delay Time tPHL
Input Capacitance Power Dissipation Capacitance
CIN Cpd
3.3 5.0 3.3 50pF 5.0 3.3 15pF 5.0 3.3 50pF 5.0 5.0 VIN=Vcc or GND No Load, f=1MHz
Rev. B, Sep 2005
■Noise Characteristics
(tr=tf=3ns) PARAMETER Not functioning output maximum dynamic VOL Not functioning output minimum dynamic VOL Minimum dynamic VIH Maximum dynamic VIL SYMBOL VOLP VOLV VIHD VILD CL 50pF 50pF 50pF 50pF Vcc(V) 5.0 5.0 5.0 5.0 CONDITIONS MIN --0.8 --Ta=25°C TYP 0.3 -0.3 --M AX 0.8 -3.5 1.5 UNITS V V V V
■Typical Application Circuit
■Waveforms
Rev. B, Sep 2005
■Typical Application Circuit
■Waveforms
DISCLAIMER: The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Rev. B, Sep 2005
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