BCR16A

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE BCR16A, BCR16B, BCR16C, BCR16E OUTLINE DRAWING Dimensions in mm 3 φ2.0 MIN 1 φ2.0 MIN 14 MAX 3 1 φ8.7 MAX 2 2 φ11.1 MAX • IT (RMS) ...................................................................... 16A • VDRM ..............................................................400V/500V • IFGT !, IRGT !, IRGT # ........................................... 30mA 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL BCR16A APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, solid state relay, microwave ovens MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Voltage class 8 400 600 10 500 700 Unit V V Non-repetitive peak off-state voltage V1 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Conditions Commercial frequency, sine full wave, 360° conduction BCR16A, B, C BCR16E Tc =99°C Tb=71 °C 3 MAX 6.5 MAX Unit A A A2s W W V A °C 16 5 10 2 Ratings 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 170 121 0.5 –20 ~ +125 V1. Gate open. Feb.1999 19 MAX MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM RATINGS (continue) Symbol T stg Parameter Storage temperature BCR16A — Weight (Typical value) BCR16B BCR16C BCR16E — — Viso Soldering temperature Mounting torque Isolated voltage BCR16A only, 10 sec. BCR16C only (Typical value) BCR16E only, Ta=25° C, AC 1 minute, T2 Terminal to base Test conditions Ratings –20 ~ +125 3.0 8.5 8.5 9.5 230 30 2.94 1500 °C kg·cm N·m V g Unit °C ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) R th (j-b) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case (BCR16A, BCR16B, BCR16C) Junction to base (BCR16E) Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, Tb=25°C (BCR16E only), ITM=25A , Instantaneous measurement Limits Min. — — — — — — — — 0.2 — — V3 Typ. — — — — — — — — — — — — Max. 3.0 1.6 1.5 1.5 1.5 30 30 30 — 1.2 2.5 — Unit mA V V V V mA mA mA V °C/W °C/W V/µ s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. Voltage class VDRM (V) (dv/dt) c Symbol R Min. — Unit Test conditions Commutating voltage and current waveforms (inductive load) 8 400 L 10 V/µ s R — 1. Junction temperature Tj =125° C 2. Rate of decay of on-state commutating current (di/dt)c=–8A/ms 3. Peak off-state voltage VD =400V L 10 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD 10 500 Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING BCR16B 2-φ3.2 MIN 20 MAX Dimensions in mm BCR16C 2-φ3.2 MIN 14 BCR16E 5.3 MAX 20 MAX 21 MAX Feb.1999 22 MAX 1 3 23±0.2 33 MAX (16.2) 1 φ2.5 MIN φ2.0 MIN 16 MAX 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 3 φ2.0 MIN 15.5 MAX 1 3 φ2.0 MIN 10 MAX 16 MAX 1.9 MAX (φ16) 23±0.2 φ33 MAX 2 8.5 MAX 3 MIN 21 MAX 1 φ2.0 MIN 1.8 MAX 10 MAX 1.8 MAX 8 MAX 20.5 MAX φ8.7 MAX φ8.7 MAX 3 φ8.7 MAX 2 M6 × 1.0 2 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 200 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 103 7 TC = 25°C 5 Tb = 25°C 3 2 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) GATE VOLTAGE (V) 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 PGM = 5.0W IGM = 2A GATE TRIGGER CURRENT • VOLTAGE (Tj = t °C) GATE TRIGGER CURRENT • VOLTAGE (Tj = 25°C) 3 2 VGM = 10V PG(AV) = 0.5W 100 (%) GATE CHARACTERISTICS GATE TRIGGER CURRENT·VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ 180 160 140 120 100 80 60 GATE TRIGGER VOLTAGE 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) (BCR16A, B, C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO BASE) (BCR16E) TRANSIENT THERMAL IMPEDANCE (°C/W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 1.6 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 40 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 30 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 CASE TEMPERATURE (°C) 35 140 120 100 BCR16A, BCR16B, 80 BCR16C 60 BCR16E 40 360° CONDUCTION 20 RESISTIVE, INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16A) 160 160 160 t4.0 140 120 120 t3.0 120 80 80 t2.0 ALL FINS ARE 100 80 60 40 20 0 BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITH SOLDER : MOUNTING PLATE WITHOUT GREASE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16B) 160 140 120 100 80 60 40 20 0 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : INSULATED PLATE WITH GREASE ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 160 160 t4.0 120 120 t3.0 80 80 t2.0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16A, BCR16B, BCR16C, BCR16E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16C) 160 AMBIENT TEMPERATURE (°C) 140 NATURAL 120 100 80 60 40 20 0 AMBIENT TEMPERATURE (°C) ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED CONVECTION ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR16E) 160 140 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 160 160 t4.0 120 120 t3.0 80 80 t2.0 120 100 80 60 40 CURVES APPLY 160 160 t4.0 120 120 t3.0 80 80 t2.0 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE : MOUNTING ON FIN WITH GREASE : MICA PLATE WITH GREASE 20 REGARDLESS OF CONDUCTION 0 ANGLE 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Feb.1999