BCR16HM

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR16HM OUTLINE DRAWING 2 5.0 MIN 23.0MAX Dimensions in mm 39.2 MAX 20.2 MAX 2-φ4.2 3 20.1 MAX 21.6 MAX 30.0±0.2 7.0 7.0 8.25 6.35 7.95 9.75 2 1 3 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL φ2.0(T1,T2) φ1.55(G) 6.35 GATE TERMINAL INDICATION 1.5 • • • • • IT (RMS) ...................................................................... 16A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ........................................... 30mA Viso ........................................................................ 2200V UL Recognized: File No. E80276 3-φ1.3 TYPE NAME VOLTAGE CLASS ∗ LOT No. Tb TEST POINT BCR16HM (C TYPE) APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Non-repetitive peak off-state voltage V1 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mounting torque Weight Isolation voltage Screw M4 Conditions Commercial frequency, sine full wave, 360° conduction, Tb=82°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 2.6 Ratings 16 170 121 5 0.5 10 2 –40 ~ +125 –40 ~ +125 15 1.47 26 2200 TRADEMARK 11 MAX Unit A A A2s W W V A °C °C kg·cm N·m g V Ta=25°C, AC 1 minute, T 2 · T1 · G terminal to base V1. Gate open. Feb.1999 22.5 MAX T1 TERMINAL INDICATION MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-b) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to base V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tb=25°C, I TM=25A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 — V3 Typ. — — — — — — — — — — — Max. 3.0 1.6 1.5 1.5 1.5 30 30 30 — 2.0 — Unit mA V V V V mA mA mA V °C/ W V/µ s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance R th (b-f) in case of greasing is 0.5°C/W. (dv/dt) c Symbol R 8 400 L 10 V/µ s R 12 600 L 10 — Min. — 1. Junction temperature Tj =125° C 2. Rate of decay of on-state commutating current (di/dt)c=–8A/ms 3. Peak off-state voltage VD =400V Unit Test conditions Voltage class VDRM (V) Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 Tb = 25°C 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 PG(AV) = 0.5W VGT = 1.5V PGM = 5W IGM = 2A IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 TYPICAL EXAMPLE VGM = 10V GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 101 102 2 3 5 7 103 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) TYPICAL EXAMPLE –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE BASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 BASE TEMPERATURE (°C) 40 35 30 360° CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 140 120 100 80 60 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED NATURAL CONVECTION 120 160 160 t4.0 100 80 60 40 CURVES APPLY 20 REGARDLESS OF CONDUCTION ANGLE 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) 120 120 t3.0 80 80 t2.0 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C I QUADRANT III QUADRANT #2 BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25°C) COMMUTATION CHARACTERISTICS 102 7 5 4 3 2 101 7 5 4 3 2 TYPICAL EXAMPLE TC = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 100 80 60 40 20 III QUADRANT #1 MINIMUM CHARACTERISTICS VALUE I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 100 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω TYPICAL EXAMPLE IFGT I IRGT I IRGT III 6V V A RG 6V V A RG GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3 Feb.1999