BCR1AM-8

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-8 LOW POWER USE PLANAR PASSIVATION TYPE BCR1AM-8 OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm 2 VOLTAGE CLASS TYPE NAME 3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 1.25 1.25 1.3 12.5 MIN 1 5.0 MAX 1.0 10 0.41 1 0.1 6 1 0.23 • • • • • IT (RMS) ..................................................................... 1.0A VDRM ....................................................................... 400V IFGT ! ....................................................................... 5mA IRGT !, IRGT # .......................................... 5mA (3mA) V5 IFGT # ..................................................................... 10mA 132 JEDEC : TO-92 APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc=56 °C V 4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings –40 ~ +125 –40 ~ +125 3.9 MAX Unit A A A2s W W V A °C °C g V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-8 LOW POWER USE PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # $ ! @ # $ Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=1.5A, Instantaneous measurement Limits Min. — — — — — — — — — — 0.1 — V3 Typ. — — — — — — — — — — — — — Max. 1.0 1.6 2.0 2.0 2.0 2.0 5 5 V5 5 V5 10 — 50 — Unit mA V V V V V mA mA mA mA V °C/ W V/µ s V2. Measurment using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. V5. High sensitivity (I GT≤3mA) is also available. (IGT item 1) (dv/dt) c Min. Unit Test conditions Voltage class VDRM (V) Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj =125° C 8 400 2 V/µ s 2. Rate of decay of on-state commutating current (di/dt)c=–0.5A/ms 3. Peak off-state voltage VD =400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 TC = 25°C RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 8 101 7 5 3 2 100 7 5 3 2 10–1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-8 LOW POWER USE PLANAR PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 7 5 3 2 PGM = 1W VGM = 6V PG(AV) = 0.1W IGM = 1A 100 7 5 IFGT I 3 IRGT I 2 IRGT III 10–1 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT III IFGT III VGD = 0.1V 102 7 IFGT I IRGT I IRGT III 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 10–2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 JUNCTION TO AMBIENT 102 7 5 3 2 101 7 5 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 100 (%) VFGT I, VRGT I JUNCTION TO CASE VRGT III, VFGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS ON-STATE POWER DISSIPATION (W) 2.0 1.6 CASE TEMPERATURE (°C) 140 120 100 80 60 40 20 0 0 1.2 0.8 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 360° CONDUCTION 0.4 0 0 0.4 0.8 1.2 1.6 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-8 LOW POWER USE PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE NATURAL CONVECTION 120 NO FINS 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) RESISTIVE, INDUCTIVE LOADS 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE LACHING CURRENT (mA) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 100 (%) LACHING CURRENT VS. JUNCTION TEMPERATURE + T2 , G+   TYPICAL – T2 , G–  EXAMPLE – T2 , G+   10–1 –40 0 40 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION 80 120 + T2 , G– TYPICAL EXAMPLE HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25°C) 160 JUNCTION TEMPERATURE (°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 140 TYPICAL EXAMPLE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) 120 100 80 60 III QUADRANT 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) I QUADRANT Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-8 LOW POWER USE PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS 101 TC = 125°C 7 TYPICAL EXAMPLE IT = 1A 5 τ = 500µs 4 VD = 200V 3 2 III QUADRANT MINIMUM CHARAC100 TERISTICS 7 VALUE 5 4 I QUADRANT 3 2 10–1 –1 10 2 3 4 5 7 100 2 3 4 5 7 101 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) IFGT I IRGT III IRGT I IFGT III 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 3 TEST PROCEDURE 4 Feb.1999