BCR20AM

MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR20AM OUTLINE DRAWING Dimensions in mm 10.5 MAX. 4.5  16 MAX. 3.2 ± 0.2 7.0 1.3 12.5 MIN. 3.6 TYPE NAME VOLTAGE CLASS φ 3.6 ± 0.2 1.0 0.8 E 2.5 2.5 0.5 2.6 ŒŽ  ................................................................ 20A q VDRM ...................................................... 400V / 600V q IFGT !, IRGT ! , IRGT # ................... 30mA (20mA) V5 q IT (RMS) Œ Œ T1 TERMINAL  T2 TERMINAL Ž Ž GATE TERMINAL  T2 TERMINAL TO-220 APPLICATION Vacuum cleaner, light dimmer, copying machine, other control of motor and heater MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltageV 1 Non-repetitive peak off-state voltageV1 Voltage class 8 400 500 12 600 720 Unit V V Symbol I T (RMS) I TSM I 2t PGM PG (AV) VGM I GM Tj T stg — Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave, Tc=105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 V Measurement point of case temperature Ratings 20 200 167 5 0.5 10 2 –40 ~ +125 –40 ~ +125 2.0 Unit A A A2s W W V A °C °C g Feb.1999 V1. Gate open. MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol I DRM V TM V FGT ! V RGT ! V RGT # I FGT ! I RGT ! I RGT # VGD Rth (j-c) (dv/dt)c Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125°C, VDRM applied Tc=25 °C, I TM=30A, Instantaneous measurement @ # ! Limits Min. — — — — — — — — 0.2 — V3 Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 30 V5 30 V5 30 V5 — 0.8 — Unit mA V V V V mA mA mA V °C/ W V/µs Gate trigger voltageV2 Tj=25°C, V D=6V, RL=6Ω, RG=330Ω V3 Gate trigger current V2 @ # Tj=25°C, V D=6V, RL=6Ω, Tj=125°C, VD=1/2VDRM Junction to case V4 RG=330Ω V3 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance Rth (c-f) in case of greasing is 1°C/W. V5. High sensitivity (I GT ≤ 20mA) is also available. (I GT itme Œ) Voltage class VDRM (V) (dv/dt)c Symbol R Min. — 10 V/µs R — 10 Unit Test conditions 1. Junction temperature Tj=125°C 2. Rate of decay of on-atate commutating current (dv/dt)c=–10A/ms 3. Peak off-state voltage VD=400V Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE (di/dt)c TIME TIME VD TIME 8 400 L MAIN CURRENT MAIN VOLTAGE (dv/dt)c 12 600 L PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 Tj = 25°C 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 Tj = 125°C 100 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 102 7 5 3 2 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 IRGT I GATE VOLTAGE (V) VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A 101 7 5 3 VGT = 1.5V 2 GATE TRIGGER CURRENT (Tj = t °C) GATE TRIGGER CURRENT (Tj = 25 °C) 102 7 5 3 2 IFGT I IRGT III 100 7 5 3 2 101 7 5 3 2 IFGT I , IRGT I , IRGT III VGD = 0.2V 10–1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE (°C/W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 CONDUCTION TIME (CYCLES AT 60Hz) TYPICAL EXAMPLE GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 ON-STATE POWER DISSIPATION (W) 50 CASE TEMPERATURE (°C) 16 20 24 28 32 360° CONDUCTION 40 RESISTIVE, INDUCTIVE LOADS 30 140 120 100 80 360° CONDUCTION 60 RESISTIVE, INDUCTIVE 40 LOADS 20 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) 20 10 0 0 4 8 12 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 AMBIENT TEMPERATURE (°C) 140 120 100 80 60 40 20 0 0 AMBIENT TEMPERATURE (°C) ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED NATURAL CONVECTION 160 160 t2.3 100 100 t2.3 60 60 t2.3 140 120 100 80 60 40 20 0 0 NATURAL CONVECTION NO FINS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 5 10 15 20 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) 105 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 7 5 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) TYPICAL EXAMPLE IH(typ) = 20mA 104 7 5 3 2 HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) 102 7 5 4 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 7 5 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 3 2 102 7 5 3 2 BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) 101 7 5 3 2 + T2 , G+ TYPICAL – T2 , G– EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION 100 (%) 103 160 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT (mA) + T2 , G – TYPICAL EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C III QUADRANT COMMUTATION CHARACTERISTICS 102 7 MINIMUM 5 CHARAC3 TERISTICS 2 VALUE III QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) 120 100 80 60 40 20 I QUADRANT 101 7 5 3 2 TYPICAL 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) EXAMPLE 100 Tj = 125°C 7 I QUADRANT 5 IT = 4A τ = 500µs 3 2 VD = 200V f = 3Hz –1 10 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 100 (%) 103 7 5 4 3 2 TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A 330 Ω 6V V A 330 Ω 102 7 5 4 3 2 TEST PROCEDURE 6Ω TEST PROCEDURE 6V A V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 330 Ω GATE TRIGGER PULSE WIDTH (µs) TEST PROCEDURE Feb.1999