BCR20B

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE BCR20A, BCR20B, BCR20C, BCR20E OUTLINE DRAWING Dimensions in mm φ2.0 MIN 3 1 φ11 MAX 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 2 • IT (RMS) ...................................................................... 20A • VDRM ..............................................................400V/500V • IFGT !, IRGT !, IRGT # ........................................... 30mA BCR20A APPLICATION Contactless AC switches, light dimmer, on/off control of traffic signals, on/off control of copier lamps, microwave ovens, solid state relay MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 600 12 500 700 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Conditions Commercial frequency, sine full wave, 360° conduction BCR20A, B, C BCR20E Tc =98°C Tb=64 °C Ratings 20 220 203 5.0 0.5 10 2.0 –20 ~ +125 –20 ~ +125 9 MAX Unit A A A2s W W V A °C °C φ8.7 MAX 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current V1. Gate open. 3 MAX 2 17.5 MAX Feb.1999 24 MAX 3 1 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM RATINGS (continue) Symbol Parameter BCR20A — Weight (Typical value) BCR20B BCR20C BCR20E — — Viso Soldering temperature Mounting torque Isolated voltage BCR20A only, 10 sec. BCR20C only BCR20E only, Ta=25° C, AC 1 minute, T2 terminal to base Conditions Ratings 3.5 9.0 9.0 11 230 30 2.94 1500 °C kg·cm N·m V g Unit ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) R th (j-b) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case (BCR20A, BCR20B, BCR20C) Junction to base (BCR20E) Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 — — V3 Typ. — — — — — — — — — — — — Max. 3.0 1.5 1.5 1.5 1.5 30 30 30 — 1.1 2.4 — Unit mA V V V V mA mA mA V °C/W °C/W V/µ s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. Voltage class VDRM (V) (dv/dt) c Symbol R Min. — 1. Junction temperature Tj =125° C L 10 V/µ s R — 2. Rate of decay of on-state commutating current (di/dt)c=–10A/ms 3. Peak off-state voltage VD =400V L 10 Unit Test conditions Commutating voltage and current waveforms (inductive load) 8 400 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD 10 600 Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING BCR20B 2-φ3.2 MIN Dimensions in mm BCR20C 2-φ3.2 MIN BCR20E 5.3 MAX 20 MAX (φ16) 23±0.2 φ33 MAX 2 φ2.5 MIN φ2.0 MIN 1 20 MAX 1 3 23±0.2 33 MAX (16.2) 1 1 φ2.0 MIN 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE 3 TERMINAL φ2.0 MIN 10 MAX 19.5 MAX 1.9 MIN 1.8 MAX 10.5 MAX 25.5 MAX 11 MAX 3 MIN 3 26 MAX φ8.7 MAX 22 MAX 21 MAX 2 M6 × 1. 0 φ8.7 MAX 2 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 RATED SURGE ON-STATE CURRENT 320 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 TC = 25°C 5 Tb = 25°C 3 2 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) GATE VOLTAGE (V) 101 PGM = 5.0W IGM = 2A GATE TRIGGER • CURRENT VOLTAGE (Tj = t °C) GATE TRIGGER • CURRENT VOLTAGE (Tj = 25°C) 3 2 VGM = 10V 7 5 3 VGT = 1.5V 2 PG(AV) = 0.5W 100 (%) GATE CHARACTERISTICS GATE TRIGGER CURRENT·VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ 180 160 140 120 100 80 60 GATE TRIGGER VOLTAGE 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 GATE TRIGGER CURRENT 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 1.8 MAX 12 MAX φ8.7 MAX 3 22.5 MAX 19 MAX 21 MAX 14 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) (BCR20A, B, C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO BASE) (BCR20E) TRANSIENT THERMAL IMPEDANCE (°C/W) TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 BCR20A, BCR20B, BCR20C BCR20E ON-STATE POWER DISSIPATION (W) 50 45 40 360° 35 CONDUCTION RESISTIVE, 30 INDUCTIVE 25 LOADS 20 15 10 5 0 0 4 8 12 16 20 24 28 32 BASE TEMPERATURE (°C) CASE TEMPERATURE (°C) 140 120 100 80 60 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 40 CURVES APPLY REGARDLESS 20 OF CONDUCTION ANGLE 0 0 4 8 12 16 20 24 28 32 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20A) 160 160 160 t4.0 120 120 t3.0 140 80 80 t2.0 120 100 80 60 40 20 0 0 4 8 12 16 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITH SOLDER : MOUNTING PLATE WITHOUT GREASE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20B) 160 140 120 100 80 60 40 20 0 0 4 8 12 16 NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : INSULATED PLATE WITH GREASE ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 160 160 t4.0 120 120 t3.0 80 80 t2.0 20 24 28 32 20 24 28 32 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20C) 160 ALL FINS ARE BLACK PAINTED AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20E) 160 ALL FINS ARE BLACK PAINTED AMBIENT TEMPERATURE (°C) 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALUMINUM AND GREASED 140 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALUMINUM AND GREASED 120 100 80 60 40 20 0 0 4 8 12 160 160 t4.0 120 120 t3.0 80 80 t2.0 120 100 80 60 40 20 0 0 4 8 12 160 160 t4.0 120 120 t3.0 80 80 t2.0 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : MICA PLATE WITH GREASE 16 20 24 28 32 16 20 24 28 32 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Feb.1999