BCR25B

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BCR25A, BCR25B OUTLINE DRAWING 17 Dimensions in mm (19.6) φ3.3 MIN φ1.3 MIN 3 3 1 8.0 3 29 MAX 3.7 MIN 1 3 (φ14) 1.9 MAX 15.5 MAX 2 M6×1.0 1 T1 TERMINAL BCR25A 2 T2 TERMINAL 3 GATE TERMINAL 39 MAX 30±0.2 • • • • IT (RMS) ...................................................................... 25A VDRM ..............................................................400V/500V IFGT !, IRGT # ........................................................50mA IRGT ! ..................................................................... 75mA 2-φ4.2 MIN φ3.3 MIN φ1.3 MIN 3 26 MAX 13 MAX 37 MAX 2 8.0 1 8.5 16 MAX 28.5 MAX 2.5 MAX APPLICATION Contactless AC switches, light dimmer, on/off control of copier lamps 3 φ14.2 MAX BCR25B 2 MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 600 10 500 600 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM TI Tstg — — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mounting torque Weight BCR25A only BCR25A (Typical value) BCR25B (Typical value) Conditions Commercial frequency, sine full wave, 360° conduction, Tc=92° C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 25 250 262 5.0 0.5 10 2.0 –20 ~ +125 –20 ~ +125 30 2.94 18 23 37 MAX 3 Unit A A A2s W W V A °C °C kg·cm N·m g V1. Gate open. Feb.1999 8.5 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=40A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 — V3 Typ. — — — — — — — — — — — Max. 5.0 1.6 3.0 3.0 3.0 50 75 50 — 1.0 — Unit mA V V V V mA mA mA V °C/ W V/µ s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. Voltage class VDRM (V) (dv/dt) c Symbol R Min. — 1. Junction temperature Tj =125° C L 20 V/µ s R — 2. Rate of decay of on-state commutating current (di/dt)c=–13.5A/ms 3. Peak off-state voltage VD =400V L 20 Unit Test conditions Commutating voltage and current waveforms (inductive load) 8 400 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD 10 500 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 320 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 103 7 TC = 25°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 3 2 VGM = 10V GATE VOLTAGE (V) 101 7 5 VGT = 3.0V 3 2 100 7 5 3 2 PGM = 5.0W IGM = 2A GATE TRIGGER • CURRENT VOLTAGE (Tj = t °C) GATE TRIGGER • CURRENT VOLTAGE (Tj = 25°C) PG(AV) = 0.5W GATE TRIGGER CURRENT·VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ 180 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE IFGT I IRGT I VGD = 0.2V 10–1 IRGT III 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TRANSIENT THERMAL IMPEDANCE (°C/W) 100 (%) ON-STATE POWER DISSIPATION (W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 102 23 5 7 103 MAXIMUM ON-STATE POWER DISSIPATION 50 45 40 360° 35 CONDUCTION RESISTIVE, 30 INDUCTIVE 25 LOADS 20 15 10 5 0 0 5 10 15 20 25 30 35 40 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 4 8 12 0 160 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR25A) 160 NATURAL CONVECTION 140 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 120 100 100 t3.0 100 80 60 40 WITHOUT 20 MICA PLATE WITH GREASE 0 4 8 12 16 0 120 120 t3.0 BX 20-06 16 20 24 28 32 20 24 28 32 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE AMBIENT TEMPERATURE (°C) 100 80 60 40 BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR25B) 160 NATURAL CONVECTION 140 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 120 100 100 t3.0 120 120 t3.0 160 160 t4.0 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 140 120 100 80 60 40 20 0 0 20 40 60 TYPICAL EXAMPLE III QUADRANT I QUADRANT WITHOUT 20 MICA PLATE WITH GREASE 0 4 8 12 16 0 20 24 28 32 80 100 120 140 160 RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS VOLTAGE WAVEFORM 3 TYPICAL t 2 EXAMPLE (dv/dt)C VD Tj = 125°C 102 7 IT = 4A, τ = 500µs CURRENT WAVEFORM 5 VD = 200V, f = 3Hz (di/dt)C IT 3 τ t 2 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 6Ω 3 TYPICAL A 2 EXAMPLE Tj = 25°C 103 6V 7 5 IRGT III 3 IRGT I 2 IFGT I 102 7 5 3 2 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) P.C tw 0.1s 101 7 5 3 2 III QUADRANT 100 7 I QUADRANT 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) 101 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Feb.1999