BCR2PM

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR2PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR2PM OUTLINE DRAWING Dimensions in mm 10.5 MAX 5.2 1.2 2.8 5.0 TYPE NAME 17 φ3.2 ± 0.2 3.6 VOLTAGE CLASS 1.3 MAX 13.5 MIN 0.8 2.54 2.54 8.5 0.5 2.6 ŒŽ  ¡IT (RMS) ........................................................................ 2A ¡VDRM ..............................................................400V/600V ¡IRGT !, IRGT # ....................................................... 10mA Œ Œ T1 TERMINAL  T2 TERMINAL Ž Ž GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V 4.5 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 2 10 0.41 1 0.1 6 1 –40 ~ +125 –40 ~ +125 2.0 Unit A A A2s W W V A °C °C g V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR2PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VRGT ! VRGT # IRGT ! IRGT # VGD R th (j-a) Gate non-trigger voltage Thermal resistance Gate trigger current V 2 Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage V2 @ # @ # Test conditions Tj=125°C, V DRM applied Ta=25°C, I TM=1.5A, Instantaneous measurement Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=125°C, VD=1/2VDRM Junction to ambient, Natural convection Limits Min. — — — — — — 0.1 — Typ. — — — — — — — — Max. 0.5 1.6 2.0 2.0 10 10 — 40 Unit mA V V V mA mA V °C/ W V2. Measurement using the gate trigger characteristics measurement circuit. GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 2 TEST PROCEDURE 3 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 10 ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 Tj = 25°C 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR2PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE 3 2 GATE VOLTAGE (V) VGM = 6V VGT PG(AV) = 0.1W IGM = 1A GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 7 5 3 2 100 7 5 3 2 PGM = 1W IRGT I , IRGT III IRGT I, IRGT III 10–1 7 VGD = 0.1V 5 0 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 10 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 103 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 102 VRGT I 101 NATURAL CONVECTION NO FINS PRINT BOARD  t = 1.6mm   SOLDER LAND : φ2mm VRGT III 100 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 1.8 1.6 1.4 360° CONDUCTION 1.2 RESISTIVE, 1.0 INDUCTIVE LOADS 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 PRINT BOARD  t = 1.6mm  120  SOLDER LAND : φ2mm 100 CURVES APPLY 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR2PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE 103 7 5 4 3 2 102 7 5 4 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) TYPICAL EXAMPLE HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25°C) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 –40 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 140 120 100 80 60 40 20 TYPICAL EXAMPLE LACHING CURRENT (mA) DISTRIBUTION – T2 , G– TYPICAL EXAMPLE BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) 160 + T2 , G– TYPICAL EXAMPLE 0 40 80 120 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE TYPICAL EXAMPLE Tj = 125°C GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 100 (%) 160 140 TYPICAL EXAMPLE IRGT I BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 80 60 III QUADRANT 40 20 I QUADRANT GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 120 IRGT III 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999