BCR30AM

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR30AM OUTLINE DRAWING 15.9 MAX 4 Dimensions in mm 4.5±0.3 1.5±0.2 φ3.2±0.2 5.0 20.0±0.5 TYPE NAME VOLTAGE CLASS ∗ 2 2±0.3 1.0±0.2 1 2 3 4 19.5 MIN 0.6±0.2 2.8±0.3 5.45 5.45 ∗ 4 24 1 2 33 4 Measurement point of case temperature • IT (RMS) ...................................................................... 30A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ........................................... 50mA 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-3P APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =75°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 30 300 378 5 0.5 10 2 –40 ~ +125 –40 ~ +125 4.8 Unit A A A2s W W V A °C °C g V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=45A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 — V3 Typ. — — — — — — — — — — — Max. 3.0 1.6 2.5 2.5 2.5 50 50 50 — 1.2 — Unit mA V V V V mA mA mA V °C/ W V/µ s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance R th (b-f) in case of greasing is 0.3°C/W. (dv/dt) c Symbol R 8 400 L 20 V/µ s R 12 600 L 20 — Min. — 1. Junction temperature Tj =125° C 2. Rate of decay of on-state commutating current (di/dt)c=–16A/ms 3. Peak off-state voltage VD =400V Unit Test conditions Voltage class VDRM (V) Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 500 7 5 3 2 TC = 25°C 400 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) 300 200 100 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) 101 7 5 VGT = 2.5V 3 2 100 7 5 3 2 PG(AV) = 0.5W PGM = 5W GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 VGM = 10V 103 7 5 4 3 2 102 7 5 4 3 2 IFGT I TYPICAL EXAMPLE IRGT I, IRGT III IGM = 2A IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 101 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 50 40 360° CONDUCTION 30 RESISTIVE, INDUCTIVE LOADS 20 CASE TEMPERATURE (°C) 30 50 140 120 100 80 60 40 10 0 0 10 20 40 RESISTIVE, 20 INDUCTIVE LOADS 0 0 10 20 30 40 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED NATURAL CONVECTION 120 160 160 t2.3 100 80 60 40 20 0 0 10 20 30 40 120 120 t2.3 100 100 t2.3 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE RMS ON-STATE CURRENT (A) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60–40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25°C) COMMUTATION CHARACTERISTICS 102 7 5 4 3 2 101 7 5 4 3 2 MINIMUM CHARACTERISTICS VALUE TYPICAL EXAMPLE TC = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 100 80 I QUADRANT 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) III QUADRANT I QUADRANT III QUADRANT 100 1 10 2 3 4 5 7 102 2 3 4 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 100 (%) TYPICAL EXAMPLE IFGT I IRGT III IRGT I GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3 Feb.1999