MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AS
OUTLINE DRAWING
Dimensions in mm
6.5 4
1.5±0.2
5.0±0.2
0.5±0.1
∗
TYPE NAME VOLTAGE CLASS
5.5±0.2
0.9 MAX
1.0 2.3
2.3 MIN
1.0 MAX
10 MAX
0.5±0.2 0.8
2.3
2.3
∗ Measurement point of
case temperature
1
2
3 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL
24
• IT (RMS) ........................................................................ 3A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ......................... 15mA (10mA) V2 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications
1
MP-3
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg —
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Tc =108°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 3 30 3.7 3 0.3 6 0.3 –40 ~ +125 –40 ~ +125 0.26
Unit A A A2s W W V A °C °C g
V1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, VDRM applied Tc=25°C, ITM=4.5A, Instantaneous measurement Min. — — — — — — — — 0.2 —
V3
Typ. — — — — — — — — — — —
Max. 2.0 1.7 1.5 1.5 1.5 15 V2 15 V2 15 V2 — 3.8 —
Unit mA V V V V mA mA mA V °C/ W V/µs
V2. High sensitivity (IGT≤10mA) is also available. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. Case temperature is measured on the T2 terminal. (dv/dt) c Min. Unit Test conditions
Voltage class
VDRM (V)
Commutating voltage and current waveforms (inductive load)
8
400
1. Junction temperature Tj=125°C 5 V/µs 2. Rate of decay of on-state commutating current (di/dt)c=–1.5A/ms 3. Peak off-state voltage VD=400V
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
12
600
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 40
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0
TC = 25°C
35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102
1
2
3
4
5
ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
101 7 5 3 2 100 7 5 3 2
PGM = 3W PG(AV) = 0.3W IGM = 0.5A
GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C)
102 7 5 3 2
103 7 5 4 3 2
TYPICAL EXAMPLE IRGT III
IFGT I, IRGT III IRGT I
102 IFGT I, IRGT I 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
VGD = 0.2V 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
100 (%)
GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C)
103 7 5 4 3 2 102 7 5 4 3 2 101
TRANSIENT THERMAL IMPEDANCE (°C/W)
4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
TYPICAL EXAMPLE
–60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER DISSIPATION
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) 160
ON-STATE POWER DISSIPATION (W)
10
8
360° CONDUCTION 6 RESISTIVE, INDUCTIVE LOADS 4
2
0
0
1
2
3
4
5
RMS ON-STATE CURRENT (A)
CASE TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE LACHING CURRENT (mA) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 (%)
LACHING CURRENT VS. JUNCTION TEMPERATURE
100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
DISTRIBUTION
+ T2 , G+ TYPICAL – – T2 , G EXAMPLE
HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25°C)
+ T2 , G– TYPICAL EXAMPLE
100 (%)
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 III QUADRANT Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C)
I QUADRANT 0 1 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS 102 VOLTAGE WAVEFORM 7 t 5 (dv/dt)C VD 4 3 CURRENT WAVEFORM (di/dt)C 2 IT τ t 101 7 5 4 3 MINIMUM 2 CHARAC100 0 10
TERISTICS VALUE
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
100 (%)
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I QUADRANT III QUADRANT
TYPICAL EXAMPLE IRGT III IRGT I IFGT I
2 3 4 5 7 101
2 3 4 5 7 102
RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω
6V V
A RG
6V V
A RG
TEST PROCEDURE 1 6Ω
TEST PROCEDURE 2
6V V
A RG
TEST PROCEDURE 3
Feb.1999