BCR3AS

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3AS OUTLINE DRAWING Dimensions in mm 6.5 4 1.5±0.2 5.0±0.2 0.5±0.1 ∗ TYPE NAME VOLTAGE CLASS 5.5±0.2 0.9 MAX 1.0 2.3 2.3 MIN 1.0 MAX 10 MAX 0.5±0.2 0.8 2.3 2.3 ∗ Measurement point of case temperature 1 2 3 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL 24 • IT (RMS) ........................................................................ 3A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ......................... 15mA (10mA) V2 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications 1 MP-3 MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =108°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 3 30 3.7 3 0.3 6 0.3 –40 ~ +125 –40 ~ +125 0.26 Unit A A A2s W W V A °C °C g V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, VDRM applied Tc=25°C, ITM=4.5A, Instantaneous measurement Min. — — — — — — — — 0.2 — V3 Typ. — — — — — — — — — — — Max. 2.0 1.7 1.5 1.5 1.5 15 V2 15 V2 15 V2 — 3.8 — Unit mA V V V V mA mA mA V °C/ W V/µs V2. High sensitivity (IGT≤10mA) is also available. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. Case temperature is measured on the T2 terminal. (dv/dt) c Min. Unit Test conditions Voltage class VDRM (V) Commutating voltage and current waveforms (inductive load) 8 400 1. Junction temperature Tj=125°C 5 V/µs 2. Rate of decay of on-state commutating current (di/dt)c=–1.5A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD 12 600 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 40 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 TC = 25°C 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 1 2 3 4 5 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 PGM = 3W PG(AV) = 0.3W IGM = 0.5A GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IFGT I, IRGT III IRGT I 102 IFGT I, IRGT I 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) VGD = 0.2V 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 100 (%) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 101 TRANSIENT THERMAL IMPEDANCE (°C/W) 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) TYPICAL EXAMPLE –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) 160 ON-STATE POWER DISSIPATION (W) 10 8 360° CONDUCTION 6 RESISTIVE, INDUCTIVE LOADS 4 2 0 0 1 2 3 4 5 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE LACHING CURRENT (mA) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 (%) LACHING CURRENT VS. JUNCTION TEMPERATURE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION +  T2 , G+ TYPICAL – –  T2 , G EXAMPLE HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25°C) + T2 , G– TYPICAL EXAMPLE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 III QUADRANT Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) I QUADRANT 0 1 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS 102 VOLTAGE WAVEFORM 7 t 5 (dv/dt)C VD 4 3 CURRENT WAVEFORM (di/dt)C 2 IT τ t 101 7 5 4 3 MINIMUM 2 CHARAC100 0 10 TERISTICS VALUE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I QUADRANT III QUADRANT TYPICAL EXAMPLE IRGT III IRGT I IFGT I 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Feb.1999