BCR3KM

MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ŒŽ 2.6 ± 0.2 V Measurement point of case temperature  .................................................................. 3A q VDRM ...................................................... 400V / 600V q IFGT ! , IRGT ! , I RGT # ................... 15mA (10mA) V2 q IT (RMS) q UL Œ Œ T1 TERMINAL  T2 TERMINAL Ž Ž GATE TERMINAL Recognized : File No. E80271 TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol V DRM V DSM Parameter Repetitive peak off-state voltageV 1 Voltage class 8 400 500 12 600 720 Unit V V Non-repetitive peak off-state voltageV1 Symbol I T (RMS) I TSM I 2t PGM PG (AV) VGM I GM Tj T stg — Viso Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc=111°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 3 30 3.7 3 0.3 6 0.5 –40 ~ +125 –40 ~ +125 2.0 Unit A A A2s W W V A °C °C g V Feb.1999 Ta=25 °C, AC 1 minute, T1 · T2 · G terminal to case 2000 V1. Gate open. MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol I DRM V TM V FGT ! V RGT ! V RGT # I FGT ! I RGT ! I RGT # VGD Rth (j-c) Rth (j-a) Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125°C, VDRM applied Tc=25 °C, ITM=4.5A, Instantaneous measurement @ # ! Limits Min. — — — — — — — — 0.2 — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15 V 2 15 V 2 15 V 2 — 4.0 50 Unit mA V V V V mA mA mA V °C/ W °C/ W Gate trigger voltage V2 Tj=25°C, V D=6V, RL=6Ω, RG=330Ω Gate trigger current V2 @ # Tj=25°C, V D=6V, RL=6Ω, RG=330Ω Tj=125°C, VD=1/2VDRM Junction to case V3 Junction to ambient Gate non-trigger voltage Thermal resistance Thermal resistance V2. High sensitivity (I GT≤ 10mA) is also available. (IGT item Œ) V3. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 40 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 TC = 25°C 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 102 7 5 3 2 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE GATE TRIGGER CURRENT (Tj = t °C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) 101 7 5 3 VGT 2 PGM = 3W IGM = 0.5A IRGT III PG(AV) = 0.3W IFGT I , IRGT I 100 7 5 3 2 IRGT I IFGM I , IRGM III VGD = 0.2V 10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) 7 5 4 3 2 MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 102 5.0 4.5 4.0 360° 3.5 CONDUCTION RESISTIVE, 3.0 INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 130 110 CURVES APPLY REGARDLESS 100 OF CONDUCTION 90 ANGLE 80 70 60 360° CONDUCTION 50 RESISTIVE, 40 INDUCTIVE LOADS 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) 120 CASE TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 80 60 40 20 0 0 1 2 3 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 120 120 t2.3 100 100 t2.3 60 60 t2.3 4 5 6 7 8 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 100 (%) TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 TYPICAL EXAMPLE HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) 102 7 5 3 2 102 7 5 4 3 2 101 7 5 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) T2 , G EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 3 + + 2 T2 , G – TYPICAL – ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, LACHING CURRENT (mA) DISTRIBUTION + T2 , G– TYPICAL EXAMPLE Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C 160 140 TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 120 100 80 III QUADRANT 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) I QUADRANT GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 103 7 5 4 3 2 IRGT III IRGT I TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) IFGT I 6V V A RG 6V V A RG 102 7 5 4 3 2 TEST PROCEDURE 6Ω TEST PROCEDURE 6V A V RG 101 0 10 2 3 45 7 101 2 3 45 7 102 GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE Feb.1999