BCR5KM

MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5KM OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ŒŽ 2.6 ± 0.2 V Measurement point of case temperature  .................................................................. 5A q VDRM ...................................................... 400V / 600V q IFGT ! , IRGT ! , I RGT # ................... 15mA (10mA) V2 q IT (RMS) q UL Œ Œ T1 TERMINAL  T2 TERMINAL Ž Ž GATE TERMINAL Recognized : File No. E80271 TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol V DRM V DSM Parameter Repetitive peak off-state voltageV 1 Voltage class 8 400 500 12 600 720 Unit V V Non-repetitive peak off-state voltageV1 Symbol I T (RMS) I TSM I 2t PGM PG (AV) VGM I GM Tj T stg — Viso Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360 ° conduction, Tc=103°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 5 50 10.4 3 0.3 10 2 –40 ~ +125 –40 ~ +125 2.0 Unit A A A2s W W V A °C °C g V Feb.1999 Ta=25 °C, AC 1 minute, T1 · T2 · G terminal to case 2000 V1. Gate open. MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol I DRM V TM V FGT ! V RGT ! V RGT # I FGT ! I RGT ! I RGT # VGD Rth (j-c) Rth (j-a) Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125°C, VDRM applied Tc=25 °C, ITM=7A, Instantaneous measurement @ # ! Limits Min. — — — — — — — — 0.2 — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15 V 2 15 V 2 15 V 2 — 3.8 50 Unit mA V V V V mA mA mA V °C/ W °C/ W Gate trigger voltage V2 Tj=25°C, V D=6V, RL=6Ω, RG=330Ω Gate trigger current V2 @ # Tj=25°C, V D=6V, RL=6Ω, RG=330Ω Tj=125°C, VD=1/2VDRM Junction to case V3 Junction to ambient Gate non-trigger voltage Thermal resistance Thermal resistance V2. High sensitivity (I GT≤ 10mA) is also available. (IGT item Œ) V3. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) TC = 25°C CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 102 7 5 3 2 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IRGT III 101 7 5 3 VGT = 1.5V 2 PGM = 3W IGM = 2A GATE TRIGGER CURRENT (Tj = t °C) GATE TRIGGER CURRENT (Tj = 25 °C) VGM = 10V GATE VOLTAGE (V) IFGT I 100 7 5 3 2 Tj = 25°C IGT = 15mA PGM = 0.3W IRGT I VGD = 0.2V 10–1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) MAXIMUM ON-STATE POWER DISSIPATION TRANSIENT THERMAL IMPEDANCE (°C/W) 7 5 4 3 2 ON-STATE POWER DISSIPATION (W) 102 10 9 8 360° 7 CONDUCTION RESISTIVE, 6 INDUCTIVE 5 LOADS 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) 140 120 100 80 60 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 80 60 40 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS NATURAL CONVECTION 120 120 t2.3 100 100 t2.3 60 60 t2.3 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 100 (%) TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 LACHING CURRENT (mA) 7 5 4 3 2 LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) 101 7 5 4 3 2 VD = 12V 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE DISTRIBUTION 102 7 5 3 2 101 7 5 T2 , G EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 3 + + 2 T2 , G – TYPICAL – ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, + T2 , G– TYPICAL EXAMPLE Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 120 100 80 60 40 20 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) III QUADRANT I QUADRANT 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 100 (%) 103 7 5 4 3 2 IRGT III TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V A V RG 6V V A RG IRGT I 102 7 5 4 3 2 IFGT I TEST PROCEDURE 6Ω TEST PROCEDURE 6V A V RG 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (µs) TEST PROCEDURE Feb.1999