BCR8PM-20

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-20 OUTLINE DRAWING Dimensions in mm 10.5 MAX 5.2 1.2 2.8 5.0 17 8.5 V TYPE NAME φ3.2 ± 0.2 3.6 VOLTAGE CLASS 1.3 MAX 13.5 MIN 0.8 2.54 2.54 0.5 2.6 ¡IT (RMS) ........................................................................ 8A ¡VDRM ..................................................................... 1000V ¡IFGT !, I RGT !, IRGT # ........................................... 30mA ¡Viso ........................................................................ 1500V ¡UL Recognized: File No. E80276 ŒŽ  V Measurement point of case temperature Œ Œ T1 TERMINAL  T2 TERMINAL Ž Ž GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 20 1000 1200 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine full wave 360° conduction, Tc =88°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 Ratings 8 80 26 5 0.5 10 2 –40 ~ +125 –40 ~ +125 Unit A A A2s W W V A °C °C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case 2.0 1500 V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) (dv/dt) c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V4 Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Tj=25 °C, VD =6V, RL=6Ω, RG=330Ω Test conditions Tj=125°C, V DRM applied Tc=25 °C, ITM=12A, Instantaneous measurement Limits Min. — — — — — — — — 0.2 — V3 Typ. — — — — — — — — — — — Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 — 3.7 — Unit mA V V V V mA mA mA V °C/ W V/µ s V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. Voltage class VDRM (V) (dv/dt) c Symbol Min. Unit Test conditions Commutating voltage and current waveforms (inductive load) R — 1. Junction temperature Tj =125° C V/µ s 2. Rate of decay of on-state commutating current (di/dt)c=–4.0A/ms 3. Peak off-state voltage VD =400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME 20 1000 TIME TIME VD L 10 PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 Tj = 125°C Tj = 25°C 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE 3 2 VGM = 10V GATE VOLTAGE (V) PG(AV) = 0.5W PGM = 5W GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 7 5 3 2 100 7 5 3 2 IGM = 2A VGT = 1.5V IRGT III IFGT I IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 102 IRGT I , IFGT I 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 103 NO FINS 16 14 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 102 101 100 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (°C) 140 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 AMBIENT TEMPERATURE (°C) CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 80 60 40 RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 120 120 t2.3 100 100 t2.3 60 60 t2.3 NATURAL CONVECTION CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 8 10 12 14 16 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE LACHING CURRENT (mA) 103 7 5 3 2 102 7 5 3 2 100 (%) LACHING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25°C) 101 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION + T2 , G+  TYPICAL  – T2 , G–  EXAMPLE + T2 , G– TYPICAL EXAMPLE 100 –40 0 40 80 120 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25°C) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) 120 100 80 60 40 20 I QUADRANT III QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS 3 TYPICAL 2 EXAMPLE 102 Tj = 125°C 7 IT = 4A 5 τ = 500µs 3 VD = 200V 2 f = 3Hz VOLTAGE WAVEFORM GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III t (dv/dt)C VD CURRENT WAVEFORM (di/dt)C IT τ t 101 7 I QUADRANT 5 3 MINIMUM 2 CHARAC100 TERISTICS III QUADRANT 7 VALUE 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Feb.1999