CM1000DU-34NF_09

MITSUBISHI IGBT MODULES CM1000DU-34NF HIGH POWER SWITCHING USE CM1000DU-34NF ● IC ................................................................ 1000A ● VCES .......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N Tc measured point (The side of Cu base plate) 150 137.5±0.25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 21 11 19 38±0.25 42.5±0.25 38±0.25 74±0.25 74±0.25 34.6 +1.0 –0.5 4 15.7 A G1 E1 G2 E2 C1 8-f6.5 MOUNTING HOLES PPS E2 C1 10.5 B 15.7 5.5 18 129.5 166 9-M6 NUTS 12 14 14 14 14 14 14 42 42 25.1 LABEL C2 C2E1 E2 C1 C1 CIRCUIT DIAGRAM Feb. 2009 1 G1 E1 E2 G2 C2E1 C2 1.9 ±0.2 34.6 +1.0 –0.5 MITSUBISHI IGBT MODULES CM1000DU-34NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature*3 Isolation voltage Torque strength Weight G-E Short C-E Short TC = 104°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 1000 2000 1000 2000 8900 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 1400 Unit V V A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) (chip) Parameter Collector cutoff current Test conditions VCE = VCES, VGE = 0V Min. — 5.5 Tj = 25°C Tj = 125°C — — — — — — — — — — — — — — — — — — 0.47 Limits Typ. — 7 — 2.2 2.45 0.286 — — — 6000 — — — — — 90 2.3 — — 0.016 — Max. 1 8.5 5 2.8 — — 220 25 4.7 — 600 150 900 200 450 — 3 0.014 0.023 — 4.7 Unit mA V µA V mΩ nF nC Gate-emitter threshold voltage IC = 100mA, VCE = 10V Gate leakage current Collector-emitter saturation voltage (without lead resistance) Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage (without lead resistance) Thermal resistance*1 Contact thermal resistance*2 External gate resistance ±VGE = VGES, VCE = 0V IC = 1000A, VGE = 15V Ic = 1000A, terminal-chip VCE = 10V VGE = 0V VCC = 1000V, IC = 1000A, VGE = 15V VCC = 1000V, IC = 1000A VGE = ±15V RG = 0.47Ω, Inductive load IE = 1000A (Note 4) R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) (chip) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG ns ns µC V IE = 1000A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied (1/2 module) K/W Ω Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : The operation temperature is restrained by the permission temperature of female connector. Feb. 2009 2 MITSUBISHI IGBT MODULES CM1000DU-34NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2000 VGE = 20V 15V 13V 12V Tj = 25°C 2000 VCE = 10V TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 1600 COLLECTOR CURRENT (A) 1600 1200 11V 1200 800 800 400 8V 0 0 2 4 6 8 10V 9V 10 400 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 0 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V Tj = 25°C IC = 400A IC = 1000A IC = 2000A 4 8 3 6 2 4 1 Tj = 25°C Tj = 125°C 0 0 500 1000 1500 2000 2 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) 104 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 Cies 102 103 7 5 3 2 101 Coes 100 Cres Tj = 25°C Tj = 125°C 1 2 3 4 102 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM1000DU-34NF HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 104 7 5 3 2 SWITCHING TIMES (ns) 103 7 5 3 2 td(off) td(on) tf tr Conditions: VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 125°C Inductive load 2 3 5 7 104 103 7 5 3 2 Irr trr 102 7 5 3 2 101 2 10 2 3 5 7 103 102 2 10 Conditions: VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 25°C Inductive load 2 3 5 7 104 2 3 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 GATE-EMITTER VOLTAGE VGE (V) Single Pulse IGBT part: Per unit base = Rth(j–c) = 0.014K/ W FWDi part: Per unit base = Rth(j–c) = 0.023K/ W 100 7 5 3 2 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 1000A 16 VCC = 800V 3 2 12 VCC = 1000V 10–1 7 5 3 2 7 5 TC measured 3 point is just 2 under the chips 10–1 7 5 3 2 7 5 3 2 8 10–2 10–2 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) IC-ESW (TYPICAL) 103 7 5 3 2 RG-ESW (TYPICAL) 103 7 5 Eon Eoff Eon, Eoff, Err (mJ/pulse) Eon, Eoff, Err (mJ/pulse) Err Eoff Eon 3 2 102 7 5 3 2 Err 102 7 5 3 2 101 7 5 3 2 100 2 10 Conditions: VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 125°C Inductive load 2 3 5 7 103 2 3 5 7 104 101 Conditions: VCC = 1000V VGE = ±15V IC = 1000A Tj = 125°C Inductive load 0 1 2 RG (Ω) Feb. 2009 3 4 5 IC (A) 4