CM100DC-24NFM

APPLICATION NOTE MITSUBISHI TENTATIVE CM100DC-24NFM Pre. S.Kawabata,H.Takemoto,M.Hiyoshi Rev Apr. Y.Nagashima 1-Dec-'06 HIGH POWER SWITCHING USE ─────────────────────────────────────────────────── Notice: This is not a final specification. Some parametric limits are subject to change. CM100DC-24NFM Caution: No short circuit capability is designed. IC ････････････････････････････ 100A VCES ････････････････････････ 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use & Resonant inverter power supply, etc ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise specified) Symbol Item Conditions VCES Collector-emitter voltage G-E Short VGES Gate-emitter voltage C-E Short IC Operation Collector current *4 ICM Pulse *3 IE Operation *3 Emitter current *4 IEM Pulse *5 *1 PC Maximum collector dissipation TC=25°C Tj Junction temperature Tstg Storage temperature Viso Isolation voltage Main terminal to base plate, AC 1 min. Torque strength Main terminal M6 Torque strength Mounting holes M6 Weight Typical value Ratings 1200 ± 20 100 200 100 200 670 - 40 ~ +150 - 40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 375 Units V V A A W °C °C V N･m N･m g TENTATIVE TSM-1860 1-3 APPLICATION NOTE MITSUBISHI CM100DC-24NFM HIGH POWER SWITCHING USE ────────────────────────────────────────────────── ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified) Symbol Item Conditions Min. Typ. Max. Units ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr Qrr V EC *3 *3 *3 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturationvoltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance VCE=VCES, VGE=0V IC=10mA, VCE=10V ±VGE=VGES, VCE=0V IC=100A VGE=15V VGE=0V, VCE=10V *6 4.5 *6 6.0 3.0 3.0 450 60 70 6 2.0 0.02 - 1 7.5 0.5 4.5 16 1.3 0.3 100 50 250 200 120 － 3.0 0.186 0.28 31 mA V μA V Tj=25°C Tj=125°C *1 *1 nF nC VCC=600V, IC=100A, VGE=15V VCC=600V, IC=100A VGE1=VGE2=15V, RG=3.1Ω Inductive load switching operation IE=100A IE=100A, VGE=0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal grease applied (1/2module) *1 *2 ns μC V Rth(j-c)Q Rth(j-c)R Rth(c-f) RG 3.1 °C/W Ω *1: TC, Tf measured point is just under the chips. *2: Typical value is measured by using Shin-Etsu Chemical Co.,Ltd "G-747". *3: IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). *4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. *5: Junction temperature (Tj) should not increase beyond 150°C. *6: Pulse width and repetition rate should be such as to cause neglible temperature rise. TENTATIVE TSM-1860 2-3 APPLICATION NOTE MITSUBISHI CM100DC-24NFM HIGH POWER SWITCHING USE ────────────────────────────────────────────────── OUTLINE DRAWING Dimensions in mm CIRCUIT DIAGRAM E2 C2E1 E2 C1 G2 TENTATIVE TSM-1860 3-3 G1 E1